Distributed micromotor system phase shifter chip scale micro-packing component
A micro-electromechanical system and phase shifter technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, electrical components, microstructure technology, etc., can solve the problem of increased device volume and loss, complex manufacturing process, shape distortion, etc. problems, to achieve the effect of long life, good process compatibility, and no distortion of shape
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specific Embodiment approach 1
[0006] Specific implementation mode 1: (see Fig. 1-Fig. 2) This embodiment consists of a substrate 1, a first coplanar waveguide ground wire 2, an insulating dielectric layer 3, a second coplanar waveguide ground wire 4, and a microstructure of a phase shifter Part 5, first metal interconnection 6, second metal interconnection 7, third metal interconnection 8, sealed insulating dielectric package 9, fourth metal interconnection 10, fifth metal interconnection 11, The sixth metal interconnection line 12, the coplanar waveguide signal line 13 and the sealant layer 15, the first metal interconnection line 6, the second metal interconnection line 7 and the third metal interconnection line 8 are equidistantly arranged on the substrate 1, the fourth metal interconnection 10, the fifth metal interconnection 11 and the sixth metal interconnection 12 are equidistantly arranged on the left side of the substrate 1, the first coplanar waveguide ground 2, The second coplanar waveguide grou...
specific Embodiment approach 2
[0007] Embodiment 2: (see Fig. 1-Fig. 2) the substrate 1 of this embodiment is made of high-resistance silicon material (with a silicon dioxide layer attached), the thickness H of the substrate 1 is 500 μm, and the substrate 1 is Dielectric constant ε of bottom 1 r is 11.9, the first metal interconnection 6, the second metal interconnection 7, the third metal interconnection 8, the fourth metal interconnection 10, the fifth metal interconnection 11 and the sixth metal interconnection 12 The radius of each is 10 μm, and the distance h between the top and bottom of the sealed insulating dielectric package body 9 and the microstructure component 5 of the phase shifter is 50 μm. Through the first metal interconnection line 6, the second metal interconnection line 7, the third metal interconnection line 8, the fourth metal interconnection line 10, the fifth metal interconnection line 11 and the first metal interconnection line vertically passing through the substrate 1 A DC voltag...
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Abstract
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