Anode active material, method of preparing the same, and anode and lithium battery containing the anode active material
A negative electrode active material, technology of scope, applied in the field of negative electrode active material, its preparation, and negative electrode and lithium battery including the negative electrode active material, can solve the problem of not actively proceeding and the like
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Embodiment 1
[0059] Silicon was deposited on a copper substrate using a silicon target with a diameter of 2 inches to form a silicon film with a thickness of 150 nm, and a Cu (16 μm) / Si (150 nm) negative electrode film was prepared. Set the initial vacuum pressure in the deposition to less than 5×10 -3 tor, then the 5 x 10 -3 Argon atmosphere in Torr and silicon deposited at a flow rate of 10 sccm under RF power of 50 watts to obtain a silicon film with a thickness of 150 nm.
Embodiment 2
[0072] Evaluation Example 2: TEM Analysis
[0073] The silicon thin films of Example 1 and Comparative Example 1 were analyzed using a transmission electron microscope (FE-TEM (300 kV), ion-milling).
[0074] The result is expressed in figure 2 A and 2B.
[0075] Such as figure 2 As shown in A and 2B, the images of the silicon thin films of Example 1 and Comparative Example 1 did not show any difference, and Debye-Schererer rings were not observed in either silicon thin film. Since no Debye-Scherer rings were observed in the image, the silicon thin film of Comparative Example 1 was amorphous silicon. However, although Debye-Schererer rings were not observed in the silicon thin film in Example 1, since the Raman spectrum of Example 1 was different from that of Comparative Example 1, the silicon thin film of Example 1 was not amorphous silicon. Therefore, it can be deduced that the silicon thin film of Example 1 contains nanoscale-sized crystals of a size smaller than 5 nm...
Embodiment 3
[0078] Evaluation Example 3: Raman spectroscopic analysis during charging and discharging
[0079] A charge / discharge test of the battery manufactured above was performed at room temperature (25° C.). The cells were charged at a constant current with a current density of 2100 mA / g. When the voltage of the battery reached 0.01V, it was charged at a constant voltage until the final current density was 210mA / g. Then, constant current discharge was performed at a constant discharge current density of 2100 mA / g until the voltage of the battery was 1.5V. Toscat3000 (TOYO, Japan) was used as charging and discharging equipment.
[0080] The Raman spectra of the silicon thin films produced in Example 1 and Comparative Example 1 were measured during charging and discharging, and structural changes of the silicon thin films due to charging and discharging were analyzed.
[0081] The silicon thin film samples of Example 1 and Comparative Example 1 were prepared as follows to be analyze...
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