Device and method for growing zinc oxide film

Abstract

The invention discloses a device for growing a zinc oxide film, which comprises a substrate pedestal, three jet flow inlet nozzles, an auxiliary air blow nozzle, a substrate rotation mechanism and a stainless steel housing. The device meets the special requirement that the P-type doping of the zinc oxide film is suitable for low growth temperature and the improvement in crystallization quality is suitable for high growth temperature. The substrate pedestal is designed to a double-temperature region including a lower constant temperature region in high-temperature state during operation and consisting of a heater with larger thermal capacity, a temperature control probe and a heat preservation layer, and an upper temperature adjusting region consisting of a substrate tray with small thermal capacity and good heat conduction, a substrate, a temperature sensing probe and a thermal insulation layer, so that the temperature cycle modulation for P-type doping growth and high-temperature fast annealing is achieved by controlling the on / off time and the blow rate of a temperature adjusting gas entering the gap between the thermal conductive tray and the thermal insulation layer. The invention simultaneously discloses the method for growing the zinc oxide film. The invention can improve the crystallization quality and achieve uniform growth of the zinc oxide film, and can meet the requirement for preparing short-wavelength photoelectric devices.

Description

technical field [0001] The invention relates to the technical field of epitaxial growth of semiconductor thin films, in particular to a device and method for growing zinc oxide thin films, in particular to a metal organic chemical vapor deposition (MOCVD) reaction chamber structure for epitaxial growth of zinc oxide semiconductor thin films. The reaction chamber structure with temperature modulation function designed by the present invention can take into account the special requirements of zinc oxide thin film growth with low-temperature P-type doping and high-temperature rapid annealing to improve crystal quality, and can realize uniform growth of zinc oxide thin film with high crystal quality to meet Preparation of short-wavelength optoelectronic devices needs. Background technique [0002] Zinc oxide (ZnO) has a similar band gap and crystal structure to gallium nitride (GaN), and is considered to be the most promising third-generation semiconductor optoelectronic materia...

AI Technical Summary

Problems solved by technology

A lower growth temperature (~500°C) is conducive to the incorporation of high-concentration doping of p-type impurities (such as N atoms), but it will introduce a large number of lattice defects; while a higher growth temperature (700-1000°C) will It is conducive to improving the crystallinity of the material, but due to the self-compensation effect brought by the large Madelung energy of ZnO and the existence of strong ionic bonds, it is very difficult to dope and incorporate p-type impurities (such as N atoms) at high concentrations, and it is impossible to obtain p-type conductivity

[0009] (2) Three-dimensional growth, difficulty in lateral film formation

The polarity of ZnO along the C axis causes ZnO to grow rapidly along the C axis, and a large number of grain boundaries are generated inside the material, which reduces the material performance and greatly affects the luminous efficiency.

[0010] (3) Strong pre-reaction

[0023] Although various forms of MOCVD equipment reaction chamber structures for ZnO film growth have been developed in the world, they either cannot effectively overcome the pre-reaction to achieve effective doping and uniform and clean film growth, or do not have the temperature modulation function of high and low temperature growth.

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