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Silicon carbide thin film forming device and silicon carbide thin film producing method

A film forming and silicon carbide technology, which is used in the field of silicon carbide film forming devices and the preparation of silicon carbide films by a precursor conversion method, can solve problems such as thermal expansion coefficient and lattice mismatch, and achieve stable performance, dense and uniform, and thickness. control effect

Inactive Publication Date: 2008-07-16
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to provide a silicon carbide thin film forming device for the existing problems in the preparation of SiC thin films, that is, the unavoidable thermal expansion coefficient and lattice mismatch problem of coating and CVD growth technology and the preparation method of silicon carbide thin film

Method used

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  • Silicon carbide thin film forming device and silicon carbide thin film producing method
  • Silicon carbide thin film forming device and silicon carbide thin film producing method
  • Silicon carbide thin film forming device and silicon carbide thin film producing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] 1) Take 10g of the PCS precursor, and fix the size of the film nozzle 63 of the film spray plate 6 in the melt spinning film by adjusting the screws 61, 62, 65, 66, the left splint 64, and the right splint 67, and then degas the PCS Treatment: Put PCS solid polycarbosilane into the spray film material barrel 7 of the silicon carbide film forming device, install the upper sealing cover 1, the ejector rod 2, the spray film plate 6, the gasket 4 and the lower sealing cover 5, and fix it with Screws 11, 12, 51, and 52 are locked. After assembly, put the silicon carbide film forming device filled with polycarbosilane into the vacuum furnace, set the temperature rise program, and the temperature rises from room temperature to 270°C in 100 minutes, and then rises to 270°C in 20 minutes. 290°C, and then kept at 290°C for 3h. Take out the molding device, loosen the fixing screws 11, 12, 51, 52, remove the upper sealing cover 1, the gasket 4, the spray film plate 6 and the lower ...

Embodiment 2

[0050] 1) Take 10g of the PCS precursor, and fix the size of the film nozzle 63 of the film spray plate 6 in the melt spinning film by adjusting the screws 61, 62, 65, 66, the left splint 64, and the right splint 67, and then degas the PCS Treatment: Put PCS solid polycarbosilane into the spray film material barrel 7 of the silicon carbide film forming device, install the upper sealing cover 1, the ejector rod 2, the spray film plate 6, the gasket 4 and the lower sealing cover 5, and fix it with Screws 11, 12, 51, and 52 are locked. After assembly, put the silicon carbide film forming device filled with polycarbosilane into the vacuum furnace, set the temperature rise program, and the temperature rises from room temperature to 270°C in 100 minutes, and then rises to 270°C in 20 minutes. 290°C, and then kept at 290°C for 3h. Take out the molding device, loosen the fixing screws 11, 12, 51, 52, remove the upper sealing cover 1, the gasket 4, the spray film plate 6 and the lower ...

Embodiment 3

[0058]1) Take 10g of the PCS precursor, and fix the size of the film nozzle 63 of the film spray plate 6 in the melt spinning film by adjusting the screws 61, 62, 65, 66, the left splint 64, and the right splint 67, and then degas the PCS Treatment: Put PCS solid polycarbosilane into the spray film material barrel 7 of the silicon carbide film forming device, install the upper sealing cover 1, the ejector rod 2, the spray film plate 6, the gasket 4 and the lower sealing cover 5, and fix it with Screws 11, 12, 51, and 52 are locked. After assembly, put the silicon carbide film forming device filled with polycarbosilane into the vacuum furnace, set the temperature rise program, and the temperature rises from room temperature to 270°C in 100 minutes, and then rises to 270°C in 20 minutes. 290°C, and then kept at 290°C for 3h. Take out the molding device, loosen the fixing screws 11, 12, 51, 52, remove the upper sealing cover 1, the gasket 4, the spray film plate 6 and the lower s...

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Abstract

The invention provides a shaping device of silicon carbide film and a method for manufacturing the silicon carbide film, relating to a silicon carbide (SiC) film. The invention provides the shaping device of the silicon carbide film and the method for manufacturing the silicon carbide film. An upper sealing cover, an ejector pin, a film spraying material bucket, a film spraying board, a gasket and a lower sealing cover are arranged; the upper sealing cover is arranged on the top of the ejector pin; the upper sealing cover is fixedly arranged on the film spraying material bucket; the ejector pin is arranged inside the film spraying material bucket; the film spraying board is fixed at the bottom part of the film spraying material bucket; the lower sealing cover is arranged under the film spraying board; the gasket is arranged between the film spraying board and the lower sealing cover; the film spraying board is provided with a film spraying disk, a left splint, a right splint and four adjusting screws; the left and right splints are arranged side by side and fixedly arranged on the film spraying disk through the adjusting screws; the film spraying board is also provided with a film spraying port. The invention carries out defoaming treatment for poly carbon silicon alky, crosslinking treatment for free original films of continuous poly carbon silicon alky, and sintering after the crosslinking treatment.

Description

technical field [0001] The invention relates to a silicon carbide (SiC) film, in particular to a silicon carbide film forming device and a method for preparing the silicon carbide film by using a precursor conversion method. Background technique [0002] SiC thin film is a compound with strong covalent bond, which can maintain high bonding strength at high temperature. It has high specific strength, high specific modulus, high temperature resistance, oxidation resistance, chemical corrosion resistance and electromagnetic wave absorption. It is a ceramic with good thermal conductivity, small thermal expansion coefficient and good thermal stability, which can be used as high-performance reinforcement for high heat-resistant, oxidation-resistant materials and polymer-based, metal-based and ceramic-based composite materials. SiC film is considered to be an excellent high-temperature structural material and refractory material. In addition to being used as a wear-resistant coatin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 冯祖德姚荣迁陈立富
Owner XIAMEN UNIV