Solar energy battery copper-indium-gallium-selenium film key target material and preparation method thereof

A technology of solar cells and copper indium gallium selenide, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as complex sputtering process and film quality problems, and achieve good product stability and low cost. Low, increased controllability effect

Inactive Publication Date: 2008-09-10
王东生
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this process, the sputtering process is more complicated due to the fact that various components are provided by different targets.
At the same time, since the selenium component is completely provided by the post-selenization process, it is easy to cause film quality problems in the post-selenization process

Method used

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  • Solar energy battery copper-indium-gallium-selenium film key target material and preparation method thereof
  • Solar energy battery copper-indium-gallium-selenium film key target material and preparation method thereof
  • Solar energy battery copper-indium-gallium-selenium film key target material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Using Cu powder, In powder, Ga powder, and Se powder as raw materials, according to the molar ratio Cu:In:Ga:Se=1:0.6:0.2:1.8, weigh 994.5g Cu powder, 1075.5gIn powder, 216.0gGa powder, 2214.0gSe powder powder, add 3500ml of absolute ethanol as a medium, pour it into a ball mill jar filled with argon, and ball mill the mixture at a speed of 100r / min for 24 hours. After mixing, put it into a corundum crucible, dry it in vacuum, put it into an argon-protected high-temperature furnace, raise the temperature to 550°C, keep it warm for 1 hour, and cool to room temperature. The argon gas was cut off, and the reaction product was ball milled for 3 hours to obtain CIGS powder for future use. Take 4000g of the above CIGS powder and add it into an axially pressurized mold, and preform it under a molding pressure of 5MPa. The preformed CIGS test block is tightly wrapped and molded under isostatic pressure of 200MPa. The formed test block was placed in a high-temperature furnace ...

Embodiment 2

[0024] Using Cu powder, In powder, Ga powder, and Se powder as raw materials, according to the molar ratio Cu:In:Ga:Se=1:0.7:0.3:2, weigh 980.1g Cu powder, 1232.6g In powder, 321.7g Ga powder, 2415.6g Se powder powder, add 4000ml of absolute ethanol as a medium, pour it into a ball mill jar filled with argon, and ball mill the mixture at a speed of 130r / min for 24 hours. After mixing, put it into a corundum crucible, dry it in vacuum, put it into an argon-protected high-temperature furnace, raise the temperature to 350°C, keep it warm for 1.5 hours, and cool to room temperature. The argon gas was cut off, and the reaction product was ball milled for 3 hours to obtain CIGS powder for future use. Take 4000g of the above CIGS powder and add it into an axially pressurized mold, and preform it under a molding pressure of 5MPa. The preformed CIGS test block is tightly wrapped and molded under isostatic pressure of 200MPa. The formed test block was placed in a high-temperature furn...

Embodiment 3

[0026] Using Cu powder, In powder, Ga powder, and Se powder as raw materials, according to the molar ratio Cu:In:Ga:Se=1:0.9:0.5:2.2, weigh 901.0g Cu powder, 1457.5gIn powder, 492.9gGa powder, 2448.6gSe powder, add 4306ml of ethanol as medium, pour it into a ball mill jar filled with argon, and ball mill the mixture at a speed of 160r / min for 12 hours. After mixing, put it into a corundum crucible, dry it in vacuum, put it into an argon-protected high-temperature furnace, raise the temperature to 400°C, keep it warm for 2 hours, and cool to room temperature. The argon gas was cut off, and the reaction product was ball milled for 4 hours to obtain CIGS powder for future use. Take 5000g of the above CIGS powder and add it into an axially pressurized mold and preform it under a molding pressure of 10MPa. The preformed CIGS test block is tightly wrapped and molded under 300MPa isostatic pressure. Put the formed test block into a high-temperature furnace protected by argon and he...

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Abstract

The invention relates to a solar battery cuprum-indium-gallium-selenium film key target material and a preparation method thereof. The target material uses cuprum-indium-gallium-selenium element powders as raw material; CIGS powder is prepared by adopting solid phase synthesis and further isostatic compaction; finally a CIGS target material is prepared by high temperature sintering. The target material is used as raw material and a CIGS film can be achieved by further sputtering. In the invention, the four-element component key target material preparation technology is simplified from 'fractional deposition---selenizing optimization'to'one-step deposition', thereby solving the complex technological process of multiple target replacements and repeated depositions and the quality problem caused by late-stage selenylation; the adjustment of the components is carried out by the target material; the late-stage sputtering technology only needs to ensure the quality of film forming, thereby increasing the controllability of the technology.

Description

technical field [0001] The invention relates to a key target material of a copper indium gallium selenide (CIGS) thin film photoelectric conversion material for a thin film solar cell and a preparation method thereof. Background technique [0002] In recent years, the development of thin-film solar cells with direct bandgap materials has become a new research hotspot. CuIn (1-x) Ga x Se 2 (CIGS) thin-film solar cells have become one of the most promising thin-film photovoltaic devices due to their low cost (only 1 / 10 of crystalline silicon solar cells), high conversion efficiency (currently reached 19.3%), and good stability. . [0003] At present, the commonly used CIGS thin film preparation processes include co-evaporation process-selenization process, step-by-step magnetron sputtering-selenization process, etc., and have obtained better conversion efficiency. Such as: He Qing, Sun Yun, Li Fengyan, etc. Cu(In,Ga)Se with an efficiency of 12.1% 2 Thin-film solar cells ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 王东生黄开盛龙飞李建军邹正光
Owner 王东生
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