Phase change storage unit and method for dual shallow groove separated bipolar transistor selection

Abstract

The invention provides a phase change memory cell structure that is gated by bipolar transistors and isolated by double shallow trenches and a manufacturing method thereof. On a base of p-type or n-type conduction in a first conduction type, bit lines of a second conducting type with low resistance are utilized to serve as a collecting electrode of the bipolar transistors and the bit lines are separated by relatively deep shallow trench isolation (STI); a base electrode and an emitting electrode of the first conduction type are prepared above the bit lines, the bipolar transistors formed on the same bit line are separated by relatively shallow STI; finally, a phase change memory cell is prepared on each bipolar transistor. The bipolar transistors are manufactured and the phase change memory cell is prepared on each bipolar transistor largely by ion injection and regular semiconductor technique, and the memory cell is gated and operated by the bipolar transistors. Compared with the phase change memory cell with the existing structure, the phase change memory cell structure provided by the invention has high density and low manufacturing cost, and one bipolar transistor can correspond to a plurality of phase change memory cells.

Description

technical field [0001] The invention relates to a single-eye structure and a manufacturing method of a phase-change memory device, more precisely, to a phase-change memory unit and a method based on bipolar transistor gating based on double shallow trench isolation. It belongs to the field of memory in microelectronics. Background technique [0002] Phase-change memory (PCM) is currently a hot spot in the research of a new generation of non-volatile memory, and has broad market prospects. It combines high-speed, high-density, simple structure, low cost, radiation resistance, and non-volatility. , is currently widely optimistic about the next generation of memory, it will have the opportunity to replace the widely used flash memory, thus occupying an important position in the field of electronic memory. [0003] High-density PCM is an important direction for the development of PCM at present, and replacing MOS transistors with bipolar transistors is an effective way to incre...

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Problems solved by technology

Samsung has been committed to the research of phase-change memory based on bipolar transistor gating in recent years (J.H.Oh et al., IEDM, 2006, p.49), and has achieved remarkable results, and has produced a 512M devices; however, in Samsung's research and patents, the epitaxial method is used to manufacture bipolar transistors. This method is expensive and is not conducive to cost reduction. Therefore, if a cheaper structure and manufacturing can be provided method will greatly increase its due value

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