Application of dissoluble tetraalkylammonium axial phthalocyanine compound replacement in making organic film transistor

An organic thin film and tetraalkyl technology, which is applied in the field of optoelectronic materials and information, can solve problems such as harsh conditions, high cost, and complicated processing methods, and achieve the effects of stable performance, adjustable energy level, and easy integrated processing

Inactive Publication Date: 2011-02-16
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the above-mentioned phthalocyanine compounds all adopt the processing method of vacuum evaporation to prepare the semiconductor layer in the organic thin film transistor. Compared with the solution processing method, the processing method is complicated, the conditions are harsh, and the cost is high. In order to further meet the needs of the development of organic electronic devices and Reflecting the advantages of organic semiconductor materials, the carrier mobility and electronic structure of phthalocyanine compounds need to be further improved and enriched, and should be processed by solution method

Method used

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  • Application of dissoluble tetraalkylammonium axial phthalocyanine compound replacement in making organic film transistor
  • Application of dissoluble tetraalkylammonium axial phthalocyanine compound replacement in making organic film transistor
  • Application of dissoluble tetraalkylammonium axial phthalocyanine compound replacement in making organic film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] On the 7059 glass substrate 1, a layer of metal chromium (Cr) film is plated with a radio frequency magnetron sputtering method, with a thickness of 200 nanometers, and it is photoetched into a gate 2; Silicon (SiO 2 ) as the insulating gate layer 3 with a thickness of 100 nanometers, the surface of the insulating gate layer 3 is treated with benzyl trichlorosilane to realize the self-assembled single-layer modification layer 4; The cyanine compounds are:

[0030] 2(3), 9(10), 16(17), 23(24)-tetradodecylphthalocyanine titanium dichloride (TiCl 2 Pc-4C12), 2(3), 9(10), 16(17), 23(24)-tetraoctyltin phthalocyanine dichloride (SnCl 2 Pc-4C8), 2(3), 9(10), 16(17), 23(24)-tetrabutyl phthalocyanine iron chloride (FeClPc-4C4), 2(3), 9(10), 16( 17), 23(24)-tetrapentyl indium phthalocyanine chloride (InClPc), 2(3), 9(10), 16(17), 23(24)-tetraoctyl vanadyl phthalocyanine (VOPc-4C8 ), 2(3), 9(10), 16(17), 23(24)-tetraoctyl phthalocyanine titanium (TiOPc-4C8) or 2(3), 9(10), 16(...

Embodiment 2

[0035] On the 7059 glass substrate 1, a layer of metal chromium (Cr) film is plated by radio frequency magnetron sputtering method, with a thickness of 200 nanometers, and it is photoetched into a grid 2; a layer of trioxide is sputtered on the grid 2 Dialuminum (Al 2 o 3 ) as the insulating gate layer 3, with a thickness of 100 nanometers, on the surface of the insulating gate layer 2, self-assembled single-layer modification layer 4 is carried out with dodecyl phosphoric acid; the soluble tetraalkyl axially substituted phthalocyanine used in the semiconductor layer 5 between the source / drain electrodes The compounds are: 2(3), 9(10), 16(17), 23(24)-tetradodecylphthalocyanine titanium dichloride (TiCl 2 Pc-4C12), 2(3), 9(10), 16(17), 23(24)-tetraoctyltin phthalocyanine dichloride (SnCl 2 Pc-4C8), 2(3), 9(10), 16(17), 23(24)-tetraoctyl phthalocyanine titanium (TiOPc-4C8) or 2(3), 9(10), 16( 17), 23(24)-tetrahexylvanadyl phthalocyanine (SnOPc-4C6), thin film preparation, pos...

Embodiment 3

[0041] On the plastic substrate 1, use the radio frequency magnetron sputtering method to plate one deck metal chromium (Cr) film, thickness 200 nanometers, and photolithography becomes grid 2; Aluminum (Al 2 o 3 ) as the insulating gate layer 3 with a thickness of 100 nanometers; on the surface of the insulating gate layer 3, a butanone solution of 3-0.5wt% PMMA is used to prepare the modified layer 4, and the thickness of the modified layer 4 is 50 nanometers; used for the semiconductor layer 5 between the source / drain electrodes The soluble four-alkyl axially substituted phthalocyanine compounds are 2(3), 9(10), 16(17), 23(24)-tetradodecylphthalocyanine titanium dichloride (TiCl 2 Pc-4C12) or 2(3), 9(10), 16(17), 23(24)-tetraoctylphthalocyanine titanium oxide (TiOPc-4C8), thin film preparation, post-treatment conditions and source and drain electrode processing methods With embodiment 1.

[0042] The source / drain electrodes of the TFT devices, as well as the carrier mobi...

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Abstract

The invention relates to the application of dissoluble tetra-alkyl axially replacing a phthalocyanin compound in preparing an organic thin-film transistor. The application adopts the dissoluble tetra-alkyl to axially replace the phthalocyanin compound to serve as a semiconductor layer (5) between source electrodes / drain electrodes of the organic thin-film transistor; a central ligand of the dissoluble tetra-alkyl that axially replaces the phthalocyanin compound is an atom of trivalence or more than trivalence and axial ligands are chlorine, fluorin and oxygen that can be connected with the central ligand axially replacing the phthalocyanin compound; four benzene rings surrounding phthalocyanin is replaced by alkane of four linear chains or branched chains with carbon number of 4-18. A solution processing method is adopted in the process that the dissoluble tetra-alkyl that axially replaces the phthalocyanin compound for preparing high-quality films. The films have carrier mobility of 10<-3>-1cm<2> / Vs, on-off ratio larger than 10<3>, controllable energy level, stable performance and is easy for integration manufacture.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and information technology, and relates to the application of soluble tetraalkyl axially substituted phthalocyanine compounds in the preparation of organic thin film transistors. technical background [0002] Compared with traditional inorganic semiconductor materials, organic conjugated semiconductor materials have the advantages of low cost, large area coverage, and integration with flexible substrates. They have application prospects in organic thin film transistors, integrated circuits, organic solar cells, and sensors. It is a hot field of research and development in the international academic and industrial circles. However, most of the current organic semiconductors exhibit low carrier mobility and sensitivity to the environment, which brings great difficulties to the integrated processing and application of organic electronic devices. [0003] Phthalocyanine compounds have rich ch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40C07D487/22
Inventor 田洪坤董少强耿延候
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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