52results about How to "Easy to integrate processing" patented technology

This invention relates to the use of axial substituted phthalocyanine compound as a semiconductor layer between the source / drain electrodes of organic thin-film transistor. The centre ligand of the axial substituted phthalocyanine compound is an atom with 3 valences or higher, and the axial ligands are chlorine, fluorine, or oxygen which can be connected with the centre ligands of axial substituted phthalocyanine compounds. Crystalline Film with high quality can be prepared on an organic substrate from the axial substituted phthalocyanine compound using vapor deposition process. These crystalline films have high carrier mobility, rich energy level, and stable performances and are easy for integrated process. The field effect mobility and the on / off Ratio of the organic thin-film transistor are 0.01 cm2 / Vs or more and higher than 105, respectively.

An FET band amplifier for providing a high gain. An FET band amplifier 5 included in an AM receiver comprises amplifiers 11 to 15 e.g. at five stages and a BPF 16 inserted halfway in their connection. Each of the amplifiers 11 to 15 acts as a differential amplifier comprising a p-channel FET as an amplification element. The BPF 16 allows the passage of a component of a band wider than the amplification band of the whole of the FET band amplifier and reduces a 1 / f noise by removing the low-band component of a signal amplified by the amplifiers 11 to 13 at three stages and thermal noise by removing the high-band component. Thus, each of the amplifiers 14, 15 connected to the rear stage of the BPF 16 is not saturated by a noise component.

The invention relates to the application of dissoluble tetra-alkyl axially replacing a phthalocyanin compound in preparing an organic thin-film transistor. The application adopts the dissoluble tetra-alkyl to axially replace the phthalocyanin compound to serve as a semiconductor layer (5) between source electrodes / drain electrodes of the organic thin-film transistor; a central ligand of the dissoluble tetra-alkyl that axially replaces the phthalocyanin compound is an atom of trivalence or more than trivalence and axial ligands are chlorine, fluorin and oxygen that can be connected with the central ligand axially replacing the phthalocyanin compound; four benzene rings surrounding phthalocyanin is replaced by alkane of four linear chains or branched chains with carbon number of 4-18. A solution processing method is adopted in the process that the dissoluble tetra-alkyl that axially replaces the phthalocyanin compound for preparing high-quality films. The films have carrier mobility of 10<-3>-1cm<2> / Vs, on-off ratio larger than 10<3>, controllable energy level, stable performance and is easy for integration manufacture.

The invention relates to a method for manufacturing a high-performance nano friction generator. The method comprises the steps as follows: 1), a friction material layer easy to obtain electrons is taken from a conventional nano friction generator; 2), initialization and plasma stabilization are performed on plasma equipment, so that plasmas glow and discharge; 3), technological parameters of the plasma equipment are regulated, octafluorocyclobutane is taken a reaction gas, and the surface of the friction material layer easy to obtain electrons is subjected to chemical modification; and 4), the modified friction material layer easy to obtain electrons is assembled back to the nano friction generator, so that the high-performance nano friction generator is obtained. The method for manufacturing the high-performance nano friction generator is simple in process, low in cost and high in yield, the high-performance nano friction generator can be produced in batches, the process compatibility is excellent, the method is not limited to device structures, materials and the like and can be widely applied in the conventional nano friction generator, and the output performance is improved.

The invention discloses a prefabricated unit assembly structure of a large-volume underground structure, which comprises an intermediate unit, an end unit and a connecting unit, and the intermediate unit and the intermediate unit, and the intermediate unit and the end unit respectively pass through the The first grouting hole is formed after the connecting unit is assembled, the intermediate unit, the end unit and the connecting unit are fixedly connected by horizontal positioning bolts, and the intermediate unit, the end unit and the connecting unit The joints of the units are respectively covered with upper cover plates, and the upper cover plates are fixedly connected with the joints by vertical fastening bolts. The present invention realizes the prefabrication and assembly of large-volume accident oil pools or fire-fighting pools that have not been practiced in substations at present, and only needs simple operations such as bolt fastening and post-grouting after factory processing and on-site assembly. This method not only facilitates transportation and hoisting, but also greatly improves construction efficiency.

The invention discloses an ordered Si-based Al 1‑x Ga x The controllable epitaxial growth method of N quantum dots comprises the steps of: S1, providing a Si substrate; S2, carrying out nano-patterning treatment on the surface of the Si substrate, the surface of the Si substrate is recessed inwardly to form a Si nano-column array, and The suppression layer is deposited at the bottom of the groove between the Si nanocolumn arrays; S3, the AlN buffer layer, the first GaN nanocolumn, Al 1‑x Ga x N quantum dot structure, and a second GaN nanocolumn and / or Al 1‑z Ga z N nanocolumns; wherein, 0<x<1, 0<z<1. According to the controllable epitaxial growth method of the present invention, on the one hand, the Si nanopillar array is used to realize the Al 1‑x Ga x The selective growth of the N quantum dot structure enhances the ability to control the size and distribution of the Si-based quantum dot structure. On the other hand, the support of the first GaN nanocolumn can also help release epitaxial stress and improve crystal quality.

The invention discloses a double-leaf spring flexible joint without axis drift. The joint is assembled through integrated machining or split machining of a linear cutting machine; the middle of a left connection rod is of an arc structure and the two ends of the left connection rod are straight-line segments, and a right connection rod is of a cylindrical structure; an upper leaf spring and a lower leaf spring are in the shapes of symmetrical arcs and symmetrically arranged at the two ends of the right connection rod; the arc-structure ends of the upper leaf spring and the lower leaf spring are connected with the left connection rod; and the middles of the left connection rod, the upper leaf spring, the lower leaf spring and the right connection rod form a closed hollow area. The structure ingeniously realizes no drift of a rotation axis of the flexible joint during a rotation process by using the two completely same arc-shaped leaf springs; the double-leaf spring flexible joint is low in structurally internal stress, thus expanding a rotation range, prolonging a fatigue life, and enhancing the bearing capacities of the connection rods and the structural stiffness in non-functional directions; and the double-leaf spring flexible joint disclosed by the invention is simple in structure, convenient to integrally machine by using the linear cutting machine to avoid introduction for assembly errors, and also capable of being assembled through split machining.

The invention discloses a coupling structure, which comprises a body and a cross coupler, wherein the body has a first face and a second face opposite to the first face, at least a first resonant cavity and a second resonant cavity are dug between the first face and the second face, openings of the first resonant cavity and the second resonant cavity are both located on the first face, the first resonant cavity and the second resonant cavity are separated via a separation wall, the first resonant cavity is internally provided with a first resonator, and the second resonant cavity is internally provided with a second resonator; the cross coupler at least comprises a cross coupling resonant cavity and is arranged on the separation wall, and the cross coupling resonant cavity is internally provided with a third resonator; and signals inside the first resonant cavity and the second resonant cavity are coupled via the cross coupler. According to the above coupling structure, the technical problems that the cross coupling structure in the prior art is complicated in design, and the debugging work in the case of use is tedious can be solved.

A Fresnel lens unit sensing device has at least two infrared sensing units and at least two Fresnel lens units. The Fresnel lens unit is at least divided into a first Fresnel lens unit and a second Fresnel lens unit, and the second Fresnel lens unit is located on the side of the first Fresnel lens unit, thereby being able to receive images from different angles. Infrared rays emitted by sensing objects increase the infrared sensing distance and range. The infrared sensing unit is also correspondingly divided into at least a first infrared sensing unit and at least one second infrared sensing unit, the first infrared sensing unit is located at the focal point of the first Fresnel lens unit, and the second infrared sensing unit is located at the corresponding second Fresnel lens unit. the focal point of the Niel lens unit. When the object to be sensed is in different positions, there is always an infrared sensing unit that will obtain a relatively large signal, thereby avoiding the problem of signal attenuation caused by unfavorable angles.

The invention relates to the field of electric plug production and manufacturing, in particular to a matrix loading device and method for full-automatic assembly of a charging connector. The matrix loading device for full-automatic assembly of the charging connector comprises a first base, a matrix jig loading assembly, a jig transfer assembly, a matrix loading assembly, a matrix feeding assemblyand a matrix jig discharging assembly, wherein the matrix jig loading assembly is arranged on the first base and is used for loading and transferring the whole jig, the jig transfer assembly is used for turning over the jig, the matrix loading assembly and the matrix jig loading assembly are linked, the matrix loading assembly and the matrix feeding assembly are linked, the matrix loading assemblyis used for assembling the matrix jig and the matrix, the matrix jig discharging assembly and the matrix loading assembly are linked, and the matrix jig discharging assembly is used for pressing thematrix and achieving discharging of the matrix jig. In the matrix loading device, the matrix loading device is assembled by simultaneous loading of the jig and the matrix, the matrix is arranged on the jig, subsequent assembly is facilitated, and the assembly accuracy is improved.