Heat sink material for power device and preparation method thereof

A technology for heat sink materials and power devices, applied in the field of components of power devices, to achieve the effects of small thermal expansion rate, good thermal conductivity, and directional thermal conductivity

Inactive Publication Date: 2008-09-17
宋希振
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the heat sink or packaging material used in high-power electronic devices is composed of metal molybdenum, but the thermal conductivity of the heat sink or packaging material composed of metal molybdenum can only reach 146.5w/m·k; with the development of power device

Method used

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  • Heat sink material for power device and preparation method thereof
  • Heat sink material for power device and preparation method thereof
  • Heat sink material for power device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0031] Example 1

[0032] As shown in Figure 1, it is the internal structure diagram of the tungsten copper alloy after sintering and infiltration provided by the present invention. It includes a skeleton 1 composed of metallic tungsten wrapped by a metallic nickel plating layer 3 and a thermally conductive material infiltrated into the skeleton. Metal copper 2. The tungsten copper alloy of this structure is prepared through the following process.

[0033] The first step of mixing

[0034] Take 20 kilograms and 60 kilograms of tungsten powder with particle sizes of 4-6 microns and 1.2 kg of stearic acid, put them in a ball mill barrel and stir and mix, and the mixing time is 1 hour.

[0035] Second step press molding

[0036] Take 1.26 kg of mixed tungsten powder and divide it into seven parts and 0.20 kg of copper fiber with a diameter of 50-200 microns into six layers and place them in a 50 mm×100 mm mold for compression molding; the pressing pressure is controlled by the thickn...

Example Embodiment

[0041] In order to improve the infiltration of metal copper into the framework formed by the metal object more uniformly, a certain amount of metal copper powder is mixed into the tungsten powder; and in order to facilitate the adjustment of the density of the formed W-Cu alloy heat sink material, the metal tungsten The powder adopts two different particle sizes, as in Example 2 below:

[0042] Example 2

[0043] The first step of mixing

[0044] Take 20 kilograms and 60 kilograms of tungsten powder with particle sizes of 3-4 microns and 6-8 microns, 2 kilograms of copper powder with particle sizes of 10-20 microns, and 1.5 kg of stearic acid, and place them in a ball mill and stir and mix. The mixing time is 1 hour.

[0045] Second step press molding

[0046] Take the uniformly mixed tungsten copper powder 1.26Kg and divide it into seven parts. Take 0.0378 kg of metal copper to make six layers of copper with a size of 50mm×100mm×200μm. Place the tungsten copper powder and the cop...

Example Embodiment

[0052] Example 3

[0053] In order to further improve the thermal conductivity of the heat sink material for power devices, as shown in Figure 3, a unidirectional fiber structure layer 5 composed of six layers of copper sandwiched between seven tungsten copper alloy layers 4, the heat sink material for power devices When in use, the heat can not only be discharged through the copper forming the conjoined structure 2 by infiltration, but also outwardly in the direction of the unidirectional fiber, so it has directional thermal conductivity. The preparation process is as follows:

[0054] The first step of mixing

[0055] Take 20 kilograms and 60 kilograms of tungsten powder with particle size of 1-2 microns and 6-8 microns, 15 kilograms of copper powder with particle size of 10-20 microns, and 2.0 kg of stearic acid and place them in a ball mill for stirring and mixing. 70 minutes.

[0056] Second step press molding

[0057] Take 1.4Kg of uniformly mixed tungsten copper powder and ...

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Abstract

The invention discloses a heat sink material for power devices and a preparation method thereof, and belongs to the technology field of members of power devices. The heat sink material for power devices is prepared from (by weight parts) copper 5-20 and tungsten 80-95 by compounding, pressure moulding, sintering and post treatment. The inventive heat sink material for power devices has expansion coefficient matched with semiconductor materials and high thermometric conductivity, and can satisfy the requirements of high-power devices. The inventive heat sink material also has directional heat-conducting property.

Description

technical field [0001] The invention belongs to the technical field of components of power devices, and in particular relates to a heat sink material for power devices and a preparation method thereof. Background technique [0002] For electronic devices, especially high-power devices, the semiconductor chips that make up the above-mentioned devices will generate heat during operation. In order to timely export the heat, heat sinks or packaging materials must be used. In the structure of electronic devices, since the heat sink or packaging material is connected with the semiconductor chip to form an integrated structure, the heat sink or packaging material used not only has good thermal conductivity, but also its thermal expansion coefficient must match the semiconductor chip . [0003] At present, the heat sink or packaging material used in high-power electronic devices is composed of metal molybdenum, but the thermal conductivity of the heat sink or packaging material com...

Claims

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Application Information

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IPC IPC(8): C22C27/04C22C1/04B22F3/12
Inventor 宋希振
Owner 宋希振
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