Photoelectrical semiconductor component with 3-familty Ni compound semiconductor buffer layer and its making method

Abstract

A photoelectric semiconductor component with three families nitrogen compound semiconductor buffer layers is provided, which comprises a substrate, and at least two InGa<1-x>N layers and at least two InGa<1-y>N layers which superimposes on the substrate alternately, wherein the x not equals to the y. A luminescent epitaxial structure is located on the surface of the InGa<1-y>N layer which is at the upper layer. A superlattice buffer layer is formed by the InGa<1-x>N layer which is between the substrate and the luminescent epitaxial structure and the InGa<1-y>N layer to reduce stress.

Description

technical field [0001] The invention relates to an optoelectronic semiconductor component with a buffer layer of a group III nitrogen compound semiconductor and its manufacturing method, in particular to an optoelectronic semiconductor component with a buffer layer of a group III nitrogen compound semiconductor. Background technique [0002] As light-emitting diode components are widely used in different products, materials for making blue light-emitting diodes have become an important research and development object for optoelectronic semiconductor materials in recent years. At present, the materials of blue light-emitting diodes include zinc selenide (ZnSe), silicon carbide (SiC) and indium gallium nitride (InGaN). above eV. Since the gallium nitride series is a light-emitting material with a direct gap, it can produce high-brightness illumination light, and has the advantage of longer life than zinc selenide, which also has a direct gap. [0003] The early research and ...

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Problems solved by technology

[0009] The aforementioned conventional technologies all use aluminum-containing nitride as a buffer layer. Due to the high hardness of the buffer layer, the lattice mismatch between the substrate and the light-emitting epitaxial structure cannot be adjusted.

The accumulated stress between the substrate and the light-emitting epitaxial structure will not be easily eliminated due to the high hardness of the buffer layer, and may even cause cracks in the epitaxial structure

In addition, the lattice mismatch and stress cannot be released, resulting in dislocation defects in the epitaxial structure, that is, the quality of the epitaxial structure will deteriorate as a result.

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