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AlGaN/GaN HEMT multilayer field plate device of concave grid groove and manufacturing method thereof

A field plate and device technology, applied in the field of microwave power devices, can solve the problems of increasing the length of the depletion region, decreasing the gain, increasing the capacitance between the gate and the drain, etc., and achieving the effects of eliminating current collapse, increasing the gain, and enhancing the modulation capability

Inactive Publication Date: 2008-10-01
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, the addition of the gate connection field plate increases the capacitance between the gate and drain, and also increases the length of the depletion region, resulting in a decrease in gain

Method used

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  • AlGaN/GaN HEMT multilayer field plate device of concave grid groove and manufacturing method thereof
  • AlGaN/GaN HEMT multilayer field plate device of concave grid groove and manufacturing method thereof
  • AlGaN/GaN HEMT multilayer field plate device of concave grid groove and manufacturing method thereof

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Embodiment Construction

[0061] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0062] Such as figure 2 as shown, figure 2 A schematic structural diagram of an AlGaN / GaN HEMT multilayer field plate device with recessed gates provided by the present invention. The device includes:

[0063] The gate, the source and the drain on both sides of the gate; the gate, the source and the drain are located on the top layer of the substrate material AlGaN epitaxial layer;

[0064] SiN dielectric film deposited on the surface of the device where the gate, source and drain are formed;

[0065] The pattern of the evaporation gate connecting the field plate on the SiN dielectric film;

[0066] The SiN dielectric film deposited on the surface of the device with the pattern of the gate connection field plate eva...

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Abstract

The invention relates to the technical field of microwave power device in semiconductor materials, discloses a AlGaN / GaN HEMT multilayer field board device of recessed grid, and meanwhile discloses a method for manufacturing AlGaN / GaN HEMT multilayer field board device of the recessed grid; on the basis of common AlGaN / GaN HEMT device manufacturing process, the method comprises the steps of photo-etching grid images after forming Ohm contact of a source electrode and a drain electrode, etching AlGaN extension layer of a part of the grid image, after evaporating grid metal, firstly manufacturing a grid connection field board and then a source connection field board to form the AlGaN / GaN HEMT multilayer field board device of the recessed grid. Utilization of the invention can efficiently improve puncturing characteristic, transconductance and threshold value voltage of the AlGaN / GaN HEMT device, and at the same time of improving the device plus, availably suppress phenomenon of current collapse of the AlGaN / GaN HEMT device.

Description

technical field [0001] The invention relates to the technical field of microwave power devices in semiconductor materials, in particular to an aluminum gallium nitride / gallium nitride high electron mobility field effect transistor (AlGaN / GaN HEMT) multilayer field plate device and a manufacturing method thereof. Background technique [0002] Gallium nitride (GaN), as the third-generation wide-bandgap semiconductor material, has a large bandgap (3.4eV), a high breakdown voltage (3.3MV / cm), and a high two-dimensional electron gas concentration (>10 13 cm 2 ), high velocity of saturated electrons (2.8×10 7 cm / s) and other characteristics have received extensive attention internationally. [0003] At present, the high frequency, high voltage, high temperature and high power characteristics of AlGaN / GaN HEMT devices make them have great prospects in microwave power devices. [0004] For conventional AlGaN / GaN HEMT devices, the usual process steps are as follows figure 1 as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335
Inventor 刘果果刘新宇郑英奎
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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