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Method for manufacturing semiconductor device and display device

A manufacturing method and display device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as complicated procedures, lower yield, and higher costs, so as to improve mass productivity and reduce crystallization process, the effect of increasing the film forming speed

Inactive Publication Date: 2008-12-03
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the case of using an amorphous semiconductor film, since the process of crystallization of the semiconductor film is complicated, there are disadvantages of lower yield and higher cost.

Method used

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  • Method for manufacturing semiconductor device and display device
  • Method for manufacturing semiconductor device and display device
  • Method for manufacturing semiconductor device and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0034] A method of manufacturing the display device of the present invention will be described. First, a description will be given using a light-emitting device as one embodiment of a display device. 1A to 1C , FIGS. 2A to 2C , and FIGS. 3A to 3C show a cross-sectional view of a thin film transistor used in a driver circuit, and a cross-sectional view of a thin film transistor used in a pixel portion. Note that an n-type thin film transistor using a microcrystalline semiconductor film has higher mobility than a p-type thin film transistor, and therefore an n-type thin film transistor is more suitable for use in a driver circuit. In the present invention, when thin film transistors having either polarity of n-type or p-type are used, it is preferable to make the polarities of the thin film transistors formed on the same substrate the same to reduce the number of steps.

[0035] As shown in FIG. 1A , a gate electrode 51 and a gate electrode 52 are formed on a substrate 50 . Th...

Embodiment approach 2

[0111] In this embodiment mode, other shapes of the thin film transistor shown in Embodiment Mode 1 will be described using FIG. 12 .

[0112] As shown in FIG. 12 , the TFTs 72 and 73 in this embodiment are characterized in that the ends of the source electrodes 62 a and 64 a do not coincide with the ends of the source regions 66 and 68 . In addition, it is also characterized in that the ends of the drain electrode 63 a and the drain electrode 65 a do not coincide with the ends of the drain region 67 and the drain region 69 .

[0113] In this embodiment mode, by using the same resist mask, the conductive film is wet-etched to form the source and drain electrodes 62a to 65a, and the semiconductor film to which an impurity element imparting one conductivity type is added is dry-etched to form the source region and the drain. Areas 66 to 69. By employing the structure of the source and drain electrodes 62a to 65a of this embodiment, since the distance between opposing electrodes...

Embodiment approach 3

[0115] Next, the structure of a display panel which is one embodiment of the display device of the present invention is shown below.

[0116] exist Figure 9 2 shows a mode of a display panel in which only the signal line driver circuit 6013 is formed and connected to the pixel portion 6012 formed on the substrate 6011 . The pixel portion 6012 and the scanning line driver circuit 6014 are formed using a thin film transistor using a microcrystalline semiconductor film. By forming a signal line driver circuit whose mobility is higher than that of a thin film transistor using a microcrystalline semiconductor film, the operation of the signal line driver circuit whose driving frequency is required to be higher than that required for scanning can be stabilized. The driving frequency of the line driver circuit. Note that the signal line driver circuit 6013 may be a thin film transistor using a single crystal semiconductor, a thin film transistor using a polycrystalline semiconduct...

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Abstract

It is an object to provide a method for manufacturing a display device suitable for mass production without complicating a manufacturing process of a thin film transistor. A microcrystalline semiconductor film is formed by use of a microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz using silicon hydride or silicon halide as a source gas, and a thin film transistor using the microcrystalline semiconductor film and a display element connected to the thin film transistor are formed. Since plasma which is generated using microwaves with a frequency of greater than or equal to 1 GHz has high electron density, silicon hydride or silicon halide which is a source gas can be easily dissociated, so that mass productivity of the display device can be improved.

Description

technical field [0001] The present invention relates to a display device using a thin film transistor at least in a pixel portion. Background technique [0002] In recent years, a technique of constituting a thin film transistor by using a semiconductor thin film (about several nm to several hundred nm in thickness) formed on a substrate having an insulating surface is attracting attention. Thin film transistors are widely used in electronic devices such as ICs and electro-optical devices, and in particular, development of thin film transistors as switching elements of image display devices is being accelerated. [0003] A thin film transistor using an amorphous semiconductor film, a thin film transistor using a polycrystalline semiconductor film, and the like are used as switching elements of an image display device. [0004] In addition, a thin film transistor using a microcrystalline semiconductor film is used as a switching element of an image display device (Patent Doc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L21/336H01L21/84H01L21/77
CPCH01L29/66765H01L27/1214H01L29/6675H01L27/127C23C16/511C23C16/45574C23C16/24H01J37/32229H01J37/32238H01J37/3244
Inventor 山崎舜平
Owner SEMICON ENERGY LAB CO LTD
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