Nonpolar GaN film and growth method thereof
A growth method and non-polar technology, applied in the field of non-polar GaN thin film and its growth, can solve the problems of reducing device efficiency, high cost, reducing luminous efficiency, etc., and achieve the effect of improving surface flatness
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[0015] Further illustrate the specific implementation steps of the present invention below in conjunction with accompanying drawing:
[0016] A non-polar GaN thin film, which is synthetically grown on a lithium aluminate substrate by using an MOCVD system. The thin film includes a low-temperature protective layer, a U-GaN layer, a high-temperature U-GaN layer and another a U-GaN layer.
[0017] A kind of growth method of nonpolar GaN film, in MOCVD system, in N 2 Under protection, (in-situ heat treatment can be performed at 600-900°C or not) the temperature is raised to 800-900°C to grow a low-temperature protective layer. The pressure of the low-temperature protective layer is relatively high (150-500torr), and the TMGa flow rate is relatively low (1 -50sccm, corresponding to the molar flow rate: 4E-6mole / min—3E-4mole / min), then reduce the pressure (100-300torr), raise the temperature to 1000-1100°C to continue growing the U-GaN layer, and the TMGa flow rate is relatively hi...
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