Method for growing ZnO nano-wire array on flexible substrate

A nanowire array, flexible substrate technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of expensive equipment, harsh process conditions, unable to form large-scale production, etc., to achieve simple equipment, uniform thickness , the effect of low cost

Inactive Publication Date: 2009-04-22
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the preparation methods of zinc oxide nanowires (rods) mainly include metal organic vapor phase epitaxy (MOVPE), chemical vapor deposition (CVD), pulsed laser deposition (PLD), electrochemical vapor deposition, template method and hydrothermal method. etc., but they are all in the stage of research and exploration, and cannot be mass-produced
At the same time, methods such as MOVPE, CVD, PLD, and hydrothermal methods require expensive equipment and harsh process conditions

Method used

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  • Method for growing ZnO nano-wire array on flexible substrate

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Effect test

Embodiment 1

[0019] 1) a zinc nitrate aqueous solution with a concentration of 0.05mol / L and a hexamethylenetetramine aqueous solution with a concentration of 0.05mol / L are respectively configured;

[0020] 2) Put the cleaned PET substrate into the growth chamber of the pulsed laser deposition device, use ZnO ceramics as the target material, keep the distance between the target material and the substrate at 4.5 cm, and pump the vacuum degree of the growth chamber to at least 10 -3 Pa, the growth chamber is fed with O 2 Gas, the control pressure is 0.03Pa, the laser power is 210mJ, the laser repetition frequency is 3Hz, and deposited on the PET substrate at room temperature for 2min to obtain the ZnO seed layer;

[0021] 3) Mix the zinc nitrate aqueous solution and the hexamethylenetetramine aqueous solution at a volume ratio of 1:1, then immerse the flexible substrate deposited with the ZnO seed layer in the mixed solution, react at 90°C for 6 hours, and take it out. Rinse and dry repeate...

Embodiment 2

[0024] 1) a zinc nitrate aqueous solution with a concentration of 0.01mol / L and a hexamethylenetetramine aqueous solution with a concentration of 0.01mol / L are respectively configured;

[0025] 2) Put the cleaned PET substrate into the growth chamber of the pulsed laser deposition device, use ZnO ceramics as the target material, keep the distance between the target material and the substrate at 6 cm, and pump the vacuum degree of the growth chamber to at least 10 -3 Pa, the growth chamber is fed with O 2 Gas, the control pressure is 0.02Pa, the laser power is 150mJ, the laser repetition frequency is 3Hz, and deposited on the PET substrate at room temperature for 5min to obtain the ZnO seed layer;

[0026] 3) Mix the zinc nitrate aqueous solution and the hexamethylenetetramine aqueous solution at a volume ratio of 1:1, then immerse the flexible substrate deposited with the ZnO seed layer in the mixed solution, react at 100°C for 1 hour, and then take it out. Repeatedly rinsing...

Embodiment 3

[0028] 1) a zinc nitrate aqueous solution with a concentration of 0.1mol / L and a hexamethylenetetramine aqueous solution with a concentration of 0.1mol / L are respectively configured;

[0029] 2) Put the cleaned PI substrate into the growth chamber of the pulsed laser deposition device, use ZnO ceramics as the target material, keep the distance between the target material and the substrate at 6 cm, and pump the vacuum degree of the growth chamber to at least 10 -3 Pa, the growth chamber is fed with O 2 Gas, the control pressure is 0.2Pa, the laser power is 300mJ, the laser repetition frequency is 3Hz, and deposited on the PI substrate at room temperature for 2min to obtain the ZnO seed layer;

[0030] 3) Mix the zinc nitrate aqueous solution and the hexamethylenetetramine aqueous solution at a volume ratio of 1:1, then immerse the PI substrate deposited with the ZnO seed layer in the mixed solution, react at 70°C for 12h, and then take it out , rinsed repeatedly with deionized...

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Abstract

The invention discloses a method for growing a ZnO nanometer wire array on a flexible substrate, which comprises the following steps: putting the washed flexible substrate into a growth chamber of a pulse laser deposition device, using ZnO ceramic as a target material, introducing O2 into the growth chamber, controlling the pressure to between 0.01 and 2 Pa, and depositing a ZnO seed crystal layer through pulse laser on the flexible substrate at room temperature; and respectively preparing a zinc nitrate aqueous solution the concentration of which is between 0.01 and 0.1 mol per liter and a hexamethylenetetramine aqueous solution, mixing the two aqueous solutions according the volume ratio of 1 to 1, then immerging the flexible substrate deposited with the ZnO seed crystal layer into the mixed solution, taking out the flexible substrate after reacting for 1 to 12 hours at a temperature of between 70 and 100 DEG C, rinsing the flexible substrate by using deionized water, and drying the flexible substrate. Devices used in the method is simple and is easy to operate, the prepared ZnO nanometer wire is good in array, has even thickness and low cost, and is suitable for mass production.

Description

technical field [0001] The invention relates to a method for growing a ZnO nanowire array, in particular to a method for growing a ZnO nanowire array on a flexible substrate. Background technique [0002] ZnO is a wide bandgap compound semiconductor material. The bandgap width at room temperature is 3.37eV, and the exciton binding energy is as high as 60meV. Its excitons can exist stably at room temperature and above. Ideal material for diodes (LEDs). ZnO is also the material with the most abundant micro-nano structure found today. The nano-structure of ZnO has good application value in the preparation of nano-optoelectronic devices and nano-electronic devices. In addition, the nano-structure of ZnO can also be used in field emission, medical treatment, and biosensing. and other fields have been applied. [0003] Polyethylene terephthalate (PET) is the most important variety of thermoplastic polyesters. It has creep resistance, fatigue resistance, friction resistance, good...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/00C30B29/16C01G9/02C23C26/02
Inventor 朱丽萍王雪涛叶志镇
Owner ZHEJIANG UNIV
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