Method for cleaning polycrystal carbon head material

Abstract

The invention discloses a cleaning method of primary polycrystalline carbon materials. The cleaning method mainly comprises the following steps: soaking the primary polycrystalline carbon materials in mixed solution of sulfuric acid, potassium permanganate and sodium nitrate, washing the primary polycrystalline carbon materials with clear water after fetching the primary polycrystalline carbon materials, placing the primary polycrystalline carbon materials into mixed solution of nitric acid and hydrofluoric acid for cleaning, fetching the primary polycrystalline carbon materials and washing with purified water, performing purified water supersonic treatment on the primary polycrystalline carbon materials and fetching the primary polycrystalline carbon materials for drying. The method abandons the traditional machining methods for removing graphite impurities from the primary polycrystalline carbon materials, and employs a chemical cleaning method. Compared with the traditional methods, the cleaning method using chemical solution for cleaning the primary polycrystalline carbon materials can remove the graphite impurities from the primary polycrystalline carbon materials, fully satisfies the cleaning requirements of the solar silicon industry, has less primary polycrystalline carbon material loss and increases the raw material availability. Cleaning waste acid and washing fluid do not pollute the environment after emission treatment.

Description

technical field [0001] The invention relates to the technical field of processing graphite on polycrystalline carbon head materials in solar silicon materials, in particular to a method for cleaning polycrystalline carbon head materials. Background technique [0002] With the rapid development of modern construction, the supply of silicon materials cannot meet the growing industrial requirements. During the growth process of polysilicon, some silicon materials are attached with graphite, and some impurities are attached to the surface during transportation engineering. The traditional treatment method is to use mechanical methods to grind away the graphite attached to the surface, which will greatly reduce the loss of silicon, and the speed is very slow, which seriously wastes production man-hours. Improper treatment will bring some additional impurities, which cannot be guaranteed Impurities on the surface of the silicon material are completely removed. Contents of the in...

AI Technical Summary

Problems solved by technology

The traditional treatment method is to use mechanical methods to grind away the graphite attached to the surface, which will greatly reduce the loss of silicon, and the speed is very slow, which seriously wastes production man-hours. Improper treatment will bring some additional impurities, which cannot be guaranteed Impurities on the surface of the silicon material are completely removed

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