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M-Sb-Se phase changing thin-film material used for phase changing memory

A phase-change memory and thin-film material technology, which is applied in the field of microelectronics, can solve the problems of phase-change memory application limitations, poor CMOS process compatibility, poor thermal stability, etc., and achieve good data retention characteristics, good compatibility, and fast crystallization speed. Effect

Active Publication Date: 2010-10-27
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It has been reported in the literature that Sb-Te is a growth-limited phase change material, and Ge 2 Sb 2 Te 5 It is a nucleation-limited phase change material. Both types of materials contain Te element, which is a toxic element and is harmful to the environment. At the same time, it is poorly compatible with CMOS technology.
There have been patents that propose SbSe-based fast phase change materials, but this series of materials has poor thermal stability. 70 Se 30 For example, its crystallization temperature is only 120 degrees, so its application in phase change memory is limited

Method used

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  • M-Sb-Se phase changing thin-film material used for phase changing memory

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Embodiment 1

[0029] Figure 3a , Figure 3b , Figure 3c and Figure 3d is the composition of Sb 70 Se 30 , (Sb 70 Se 30 ) 96 W 4 , (Sb 70 Se 30 ) 90 W 10 , (Sb 70 Se 30 ) 80 W 20XRD test results of the W-Sb-Se thin film. The XRD spectrum shows that the W-Sb-Se film with the appropriate composition just prepared is in an amorphous state, without any diffraction peaks, and the high resistance state is an amorphous structure, while the XRD spectrum of the low resistance state W-Sb-Se film appears Sb The diffraction peaks of the W-Sb-Se films indicate that the phase transition occurs in the W-Sb-Se film, and the phase transition is closely related to Sb. see Figure 3a , the XRD pattern shows that for Sb 70 Se 30 When the material resistance drops to a certain level, Sb crystallizes when the film phase changes, indicating that the phase transition is related to Sb. see Figure 3b , in (Sb 70 Se 30 ) 96 W 4 The XRD pattern of the thin film material when the resistance...

Embodiment 2

[0037] see Figure 6 , the shortest SET pulse of 20ns can crystallize the film, that is to say, the speed of the device from high resistance state to low resistance state is 20ns, which is much faster than that of Ge 2 Sb 2 Te 5 The SET speed of phase change memory is usually reported as 100ns~200ns.

[0038] The above embodiments are only used to illustrate rather than limit the technical solution of the present invention. Any modification or partial replacement that does not depart from the spirit and scope of the present invention shall fall within the scope of the claims of the present invention.

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Abstract

The invention discloses an M-Sb-Se phase transition film material used for a phase transition storage and the ingredient thereof is (SbxSe(1-x))(1-y)My, wherein y is an atomic ratio of 0.2%-15%, x is the atomic ratio of 50%-95%, and doping elements of M comprise one or two elements out of tungsten, aluminum, indium, silver, copper, nickel, gallium, titanium , tin, oxygen and nitrogen. The M-Sb-Sephase transition film material of the invention has faster crystallization rate, faster read-write rate and better data holding property than the commonly used Ge2Sb2Te5 material and better thermal stability than SbSe binary material. Meanwhile, the material is free from element Te, thereby being environment friendly, and the material has good compatibility with CMOS technique.

Description

technical field [0001] The invention relates to a thin film material in the technical field of microelectronics, in particular to an M-Sb-Se phase change thin film material used in a phase change memory. Background technique [0002] Memory occupies an important position in the semiconductor market. Only DRAM (Dynamnic Random Access Memory) and FLASH occupy 15% of the entire market. With the gradual popularization of portable electronic devices, the market for non-volatile memory is also growing. At present FLASH occupies the mainstream of non-volatile memory, accounting for about 90%. However, with the advancement of semiconductor technology, FLASH has encountered more and more technical bottlenecks. First, the floating gate for storing charges cannot be thinned indefinitely with the development of integrated circuit technology. In addition, other shortcomings of FLASH technology also limit Its applications, such as slow data writing, high power consumption when writing da...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C11/56C22C12/00
Inventor 凌云龚岳峰宋志棠封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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