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Electrostatic chuck device

An electrostatic chuck and electrostatic adsorption technology, which is applied to holding devices, circuits, and electrical components that apply electrostatic attraction.

Active Publication Date: 2009-08-05
SUMITOMO OSAKA CEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the distribution of the electric field intensity becomes non-uniform, and the electron density of the generated plasma also becomes non-uniform. Depending on the in-plane position of the plate-shaped sample W, the processing speed and the like are different, and in-plane uniformity cannot be obtained. Good processing results, here is the problem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0155] Silicon carbide (SiC) powder and alumina powder were mixed as mixed powder so that the amount of silicon carbide (SiC) powder added became 6.0% by weight. ) atmosphere at 1650 ° C for 2 hours. The electric furnace used for this firing was used for experiments in which the temperature distribution in the furnace was ±10°C. Thus, a sintered body of Experimental Example 1 having a diameter of 50 mm and a thickness of 30 mm was obtained.

[0156] The volume intrinsic resistance of the sintered body was measured at room temperature (25° C.) by a conventional method, as shown in Table 1.

experiment example 2～6

[0158] The sintered bodies of Experimental Examples 2 to 6 were obtained based on Experimental Example 1 except that the addition amount and firing temperature of silicon carbide (SiC) powder were those shown in Table 1.

[0159] The volume intrinsic resistance of the sintered body was measured at room temperature (25° C.) by a conventional method, as shown in Table 1.

experiment example 1

[0161] Molybdenum carbide (Mo 2 C) Molybdenum carbide (Mo 2C) Powder and alumina powder were used as mixed powder, and the mixed powder was press-molded, and the obtained molded body was fired at 1750° C. for 2 hours in an argon (Ar) atmosphere. The electric furnace used for this firing was the same as that used in Experimental Example 1. Thus, a sintered body of Comparative Experiment Example 1 having a diameter of 50 mm and a thickness of 30 mm was obtained.

[0162] The volume intrinsic resistance of the sintered body was measured at room temperature (25° C.) by a conventional method, as shown in Table 1.

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PUM

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Abstract

Disclosed is an electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plate-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) comprising an electrostatic chuck portion (22), a metal base portion (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck portion (22) is composed of a dielectric plate (31) whose upper surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an internal electrode (25) for electrostatic suction, and an insulating material layer (33). The internal electrode (25) for electrostatic suction is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volume resistivity of not less than 1.0 x 10 Omega.cm but not more than 1.0 x 10 Omega.cm.

Description

technical field [0001] The present invention relates to an electrostatic chuck device, and more particularly to a plasma of a high-frequency discharge method in which plasma is generated by applying high frequency to an electrode, and plasma is applied to a plate-shaped sample such as a semiconductor sheet, a metal sheet, or a glass plate, using the plasma Electrostatic Chuck Applicable in Handling Units. Background technique [0002] In the past, in the etching, deposition, oxidation, sputtering, etc. of semiconductor devices such as ICs, LSIs, and VLSIs, or Flat Panel Displays (FPDs) such as liquid crystal displays, etc., in order to keep the processing gas at a relatively low temperature Under the good reaction, mostly using plasma. In general, methods for generating plasma in a plasma processing apparatus are roughly divided into those using glow discharge or high-frequency discharge, and those using microwaves. [0003] Figure 7 It is a cross-sectional view showing a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/205H01L21/3065H02N13/00
CPCH01L21/6833H02N13/00Y10T279/23H01L21/3065H01L21/0262
Inventor 稻妻地浩小坂井守三浦幸夫牧惠吾
Owner SUMITOMO OSAKA CEMENT CO LTD
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