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Flexible and wholly transparent ZnMgO thin film transistor and manufacturing method thereof

A thin-film transistor, transparent technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of pixel aperture ratio not reaching 100%, complex process, strong photosensitivity, etc., to achieve rich raw materials, simple process, good transparency

Inactive Publication Date: 2009-09-09
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, Si is a semiconductor material with an indirect bandgap and narrow bandgap. It is opaque in the visible light region, and cannot be bent, and the pixel aperture ratio cannot reach 100%. Moreover, Si has strong photosensitivity in the visible light region, and a mask layer is required. The process is complicated and the cost is high

Method used

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  • Flexible and wholly transparent ZnMgO thin film transistor and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0024] The flexible fully transparent ZnMgO thin film transistor is prepared by magnetron sputtering technology, and the specific steps are as follows:

[0025] 1) Weigh ZnO and Ga with a purity greater than 99.99% 2 o 3 Powder, wherein the molar percentage of Ga is 4%. The weighed ZnO and Ga 2 o 3 The powder is poured into a ball mill jar with agate balls, and milled on a ball mill for 24 hours, the purpose is to make the powder mix evenly and refine it to a certain extent. Then the raw materials are separated and dried, added with a binder for grinding, and pressed into shape. Put the formed green body into the sintering furnace, discharge elements at low temperature (400°C) to volatilize the binder, and then raise the temperature to 1200°C for 4 hours to obtain a Ga-doped ZnO ceramic target.

[0026] 2) According to the chemical formula Zn 1-x Mg x O Weigh ZnO and MgO powders with a purity greater than 99.99%, x = 0.2, pour the weighed ZnO and MgO powders into a ball...

Embodiment 2

[0033] The preparation steps are the same as in Example 1, but the difference is that Zn 1-x Mg x The Mg content in the O thin film is x=0.3. The thin film transistor device is an n-channel enhancement type with a field effect mobility of 12cm 2 / Vs, the transmittance of the device in the visible region is higher than 80%, the device can be bent by 120° and the performance remains stable.

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Abstract

The invention discloses a flexible and wholly transparent ZnMgO thin film transistor which takes Zn1-xMgxO alloy as a semiconductor film, 0<x<1 as a channel layer, n type ZnO doped with Ga as a grid electrode, a source electrode and a drain electrode, Al2O3 as a gate insulation layer, polyethylene terephthalate, polycarbonate, organic glass or polyethylene naphthalate organic polymer as a substrate and the radio frequency magnetron sputtering method as the manufacturing method. The thin film transistor of the invention has the advantages of small photosensitive degeneration, high migration rate, fast response speed, flexibility and good stability of performance.

Description

technical field [0001] The invention relates to a thin film transistor, especially a bendable fully transparent ZnMgO thin film transistor and a preparation method thereof. Background technique [0002] Thin-film transistors (TFTs) are the dominant technology for active-matrix liquid crystal display devices (AMLCDs). At present, the thin film transistors used in active matrix liquid crystal display devices have a gate layer, a gate insulating layer and a channel layer deposited in sequence on a Si substrate, and a drain electrode and a source electrode separated from each other are deposited on the channel layer. , wherein the channel layer mainly uses amorphous silicon (α-Si). However, Si is a semiconductor material with an indirect bandgap and narrow bandgap. It is opaque in the visible light region, and cannot be bent, and the pixel aperture ratio cannot reach 100%. Moreover, Si has strong photosensitivity in the visible light region, and a mask layer is required. The p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/22H01L29/43H01L29/49H01L29/51H01L21/336H01L21/203H01L21/316C23C14/35C23C14/08
Inventor 叶志镇龚丽吕建国
Owner ZHEJIANG UNIV
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