4results about How to "Meet different performance needs" patented technology

The utility model relates to a lifting and overturning screen and follow-up lifting stage combination device, and it is located on the base, and it includes a lifting and overturning screen and two lifting stages, and the lifting stage is located at the both sides of lifting and overturning screen and is symmetrically arranged, and the lifting and overturning screen includes fixed truss and the LED screen fixed on its surface, the lifting stage includes stage steel frame and the stage surface fixed on its top surface, and the both sides of fixed truss are rotatably connected with stage steel frame through rotary support respectively, and the lifting stage is provided with lifting drive assembly between lifting stage and the base, and the lifting drive assembly includes lifting drive motor, chain machine, rigid chain and a plurality of scissors fork, and the lifting drive motor is drivingly connected with chain machine, and the rigid chain is located in chain machine and is fixedly linked with stage steel frame on the upper end, and the upper and lower ends of scissors fork are hingedly connected with stage steel frame and the base respectively. The device structure of the utility model is simple, and the lifting of screen and two follow-up stages is realized by adopting one lifting power system.

A semiconductor device and a method for fabricating the same, the semiconductor device comprising: a substrate (10), a first support structure (11), a first nanowire heterojunction (12), a source (13b), a drain (13c), and a ring gate (13a); wherein the substrate (10) comprises a first region (10a), and a second region (10b) and a third region (10c) respectively located on both sides of the first region (10a); the first support structure (11) is located at least on the second region (10b) and the third region (10c); the first nanowire heterojunction (13a) 12) includes a first gate segment (12a) corresponding to the first region (10a), a first source segment (12b) corresponding to the second region (10b), and a first drain segment (12c) corresponding to the third region (10c); the first source segment (12b) and the first drain segment (12c) are located on the first support structure (11); the source (13b) is located in the first source segment (12b), the drain (13c) is located in the first drain segment (12c), and the ring gate (13a) covers the first gate segment (12a). Since the first nanowire heterojunction (12) is confined, the two-dimensional electron gas or two-dimensional hole gas carriers in the heterojunction exhibit an approximately one-dimensional transport mode during migration, which can improve carrier mobility, breakdown voltage, and reduce leakage current.

This utility model discloses a heat exchange plate with a raised structure and a plate heat exchanger. In the heat exchange zone, the plate has several straight corrugations protruding from one side of the plate plane. Several raised structures extend along one or both sides of these corrugations, intersecting with adjacent straight corrugations. By extending these raised structures, two different types of fluid channels are constructed on both sides of the plate, achieving an asymmetrical design of the fluid channels and meeting the different performance requirements of the fluid channels on both sides. Simultaneously, the raised structures expand the contact area between the fluid channel on one side and the adjacent heat exchange plate, increasing the plate strength and thus improving the pressure resistance of the plate heat exchanger.

One or more embodiments of the present disclosure provide an antenna unit. The antenna unit comprises a reflecting plate; the metasurface structure is arranged on one side of the reflecting plate; the metasurface structure comprises a plurality of first patch units which are periodically arranged; the radiation structure is arranged on one side, far away from the reflecting plate, of the metasurface structure; the radiation structure comprises a second dielectric substrate and two pairs of radiation units arranged on the second dielectric substrate, and the two pairs of radiation units are orthogonally arranged; in the direction perpendicular to the reflecting plate, a first distance is formed between the metasurface structure and the radiation structure, and a second distance is formed between the metasurface structure and the reflecting plate.