Substrate for display and manufacturing method thereof and display device
A manufacturing method and technology of a display device, which are applied in the directions of identification devices, ion implantation plating, conductive layers on insulating carriers, etc., can solve the problems of difficult control, reduced transmittance, high price, etc., and achieve high transmittance, low resistance, Strong adhesion effect
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Embodiment 1
[0099] Hereinafter, based on an Example, this invention is demonstrated more concretely.
[0100] A commercially available substrate having a color filter layer (organic resin layer) 3 formed on the surface of a glass substrate 2 was prepared, and a transparent electrode 4 film made of a GZO film was formed on the color filter layer 3 by a sputtering device. . The supporting substrate 2 used is an alkali-free glass substrate, for example, a glass substrate 2 (#1737) manufactured by Corning Corporation. The size of the glass substrate 2 is 320 mm×400 mm. As a sputtering device, a device capable of film formation by switching between a DC sputtering mode and a DC / RF sputtering mode in which high-frequency power is superimposed in the DC sputtering mode was used. When using DC / RF sputtering mode, the ratio of DC power to RF power is 1:1. The frequency of the RF power is 13.56MHz.
[0101] As the display substrate 1 of Example 1, on the color filter layer 3 formed on the above...
Embodiment 2
[0103] As the display substrate 10 of Example 2, on the color filter layer 3 formed on the glass substrate 2 as in Example 1, a 20 nm thick GZO film serving as the first layer 5 was sequentially deposited in a DC sputtering mode, A 110-nm-thick GZO film serving as the second layer 6 was deposited by DC / RF sputtering mode, and a 20-nm-thick GZO film serving as the third layer 7 was deposited by DC sputtering mode. Conditions other than this deposition were the same as in Example 1.
Embodiment 3
[0105] As the display substrate 20 of Example 3, on the same color filter layer 3a formed on the glass substrate 2 as in Example 1, a buffer layer 3b with a thickness of 20nm was deposited, and in addition, a 20nm thick buffer layer was sequentially deposited in a DC sputtering mode. For the GZO film to be the first layer 5, a 110 nm thick GZO film to be the second layer 6 was deposited by DC / RF sputtering mode, and a 20 nm thick GZO film to be the third layer 7 was deposited by DC sputtering mode. Conditions other than this deposition were the same as in Example 1.
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Abstract
Description
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