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Substrate for display and manufacturing method thereof and display device

A manufacturing method and technology of a display device, which are applied in the directions of identification devices, ion implantation plating, conductive layers on insulating carriers, etc., can solve the problems of difficult control, reduced transmittance, high price, etc., and achieve high transmittance, low resistance, Strong adhesion effect

Inactive Publication Date: 2009-10-07
CASIO COMPUTER CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, in the transparent electrode described in the above-mentioned Patent Document 1, since the Ag film 3 is used, the transmittance is lowered.
In order to suppress the decrease in transmittance, it is necessary to form the thickness of the Ag film 3 thinner, but such control is difficult
In addition, the ITO film 11 is used as the uppermost layer, but since the ITO film 11 is mainly made of rare metal In, it is expensive.
In addition, in this patent document 1, no consideration is shown regarding the fluctuation of the sheet resistance (sheet resistance) of the ZnO film when the color filter layer is heat-treated.
[0012] In this way, the above-mentioned Patent Document 1 is not an invention of forming a transparent conductive film from only a ZnO film to which impurities are added.

Method used

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  • Substrate for display and manufacturing method thereof and display device
  • Substrate for display and manufacturing method thereof and display device
  • Substrate for display and manufacturing method thereof and display device

Examples

Experimental program
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Effect test

Embodiment 1

[0099] Hereinafter, based on an Example, this invention is demonstrated more concretely.

[0100] A commercially available substrate having a color filter layer (organic resin layer) 3 formed on the surface of a glass substrate 2 was prepared, and a transparent electrode 4 film made of a GZO film was formed on the color filter layer 3 by a sputtering device. . The supporting substrate 2 used is an alkali-free glass substrate, for example, a glass substrate 2 (#1737) manufactured by Corning Corporation. The size of the glass substrate 2 is 320 mm×400 mm. As a sputtering device, a device capable of film formation by switching between a DC sputtering mode and a DC / RF sputtering mode in which high-frequency power is superimposed in the DC sputtering mode was used. When using DC / RF sputtering mode, the ratio of DC power to RF power is 1:1. The frequency of the RF power is 13.56MHz.

[0101] As the display substrate 1 of Example 1, on the color filter layer 3 formed on the above...

Embodiment 2

[0103] As the display substrate 10 of Example 2, on the color filter layer 3 formed on the glass substrate 2 as in Example 1, a 20 nm thick GZO film serving as the first layer 5 was sequentially deposited in a DC sputtering mode, A 110-nm-thick GZO film serving as the second layer 6 was deposited by DC / RF sputtering mode, and a 20-nm-thick GZO film serving as the third layer 7 was deposited by DC sputtering mode. Conditions other than this deposition were the same as in Example 1.

Embodiment 3

[0105] As the display substrate 20 of Example 3, on the same color filter layer 3a formed on the glass substrate 2 as in Example 1, a buffer layer 3b with a thickness of 20nm was deposited, and in addition, a 20nm thick buffer layer was sequentially deposited in a DC sputtering mode. For the GZO film to be the first layer 5, a 110 nm thick GZO film to be the second layer 6 was deposited by DC / RF sputtering mode, and a 20 nm thick GZO film to be the third layer 7 was deposited by DC sputtering mode. Conditions other than this deposition were the same as in Example 1.

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Abstract

The present invention provides a substrate for display containing a transparent electrode formed by a ZnO film and capable of reducing heat-treated characteristic variation, a method for manufacturing the substrate and a display device. The substrate (1) for display is provided with a support substrate (2), an organic resin layer (3) formed on the support substrate (2), and a transparent electrode (4) formed on the organic resin layer (3). The transparent electrode (4) includes a first layer (5) and a second layer (6), wherein the first layer (1) is formed on the organic resin layer (3) closely and contains zinc oxide, the second layer (6) is formed on the first layer (5) and contains zinc oxide, the layer thickness of the second layer (6) is more than that of the first layer (5). The first layer (5) is formed by DC sputtering or DC magnetron sputtering, the second layer (6) is formed by any one of high frequency sputtering, high frequency magnetron sputtering, high frequency superpose DC sputtering, and high frequency superpose DC magnetron sputtering. The substrate (1) of the invention is capable of being used for a substrate with transparent electrodes such as a contraposition electrode of a contraposition electrode.

Description

technical field [0001] The present invention relates to a display substrate having a transparent conductive layer, a method for manufacturing the display substrate, and a display device. The transparent conductive layer is based on zinc oxide formed into a film and has excellent transmittance and conductivity in the visible light region, and Adhesion to the resin substrate is good. Background technique [0002] As transparent electrodes in display devices such as liquid crystal displays and plasma displays, input devices such as solar thin-film batteries and touch panels, and components in electronic devices such as light-emitting diodes, ITO films (tin-added indium oxide) and fluorine-added SnO films are used. 2 (tin oxide) film, ZnO (zinc oxide) film added with any one of boron, aluminum, and gallium, and the like. A ZnO film to which atoms such as boron, aluminum, and gallium are added for imparting conductivity is referred to as a "conductive ZnO film" or an "impurity-a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1333G02F1/1343G02F1/1368C23C14/35C23C14/38C23C14/40C23C14/44C23C14/08G02F1/1335G09F9/30H01B5/14
CPCC23C14/086C23C14/34G02F1/13439H01L51/5206C23C14/3485H10K59/80517H10K50/816
Inventor 山本哲也山本直树牧野久雄氏原彰平岛义典岩冈启明青木久保苅一志吉田基彦
Owner CASIO COMPUTER CO LTD