Method for preparing SiCf/SiC compound material by combination of chemical vapor carbon deposition process and gas phase siliconizing process

A chemical vapor deposition and vapor silicon infiltration technology is applied in the field of preparation of SiC-based composite materials, which can solve the problems of affecting application and lack of plastic deformation ability, and achieve the effects of reducing production cost, shortening production cycle and high density.

Active Publication Date: 2011-09-21
NAT UNIV OF DEFENSE TECH
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  • Summary
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  • Description
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Problems solved by technology

[0002] Due to the bonding characteristics of its molecular structure, SiC ceramics lack plastic deformation ability and are brittle, which seriously affects their application as structural materials.

Method used

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  • Method for preparing SiCf/SiC compound material by combination of chemical vapor carbon deposition process and gas phase siliconizing process
  • Method for preparing SiCf/SiC compound material by combination of chemical vapor carbon deposition process and gas phase siliconizing process
  • Method for preparing SiCf/SiC compound material by combination of chemical vapor carbon deposition process and gas phase siliconizing process

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Effect test

Embodiment 1

[0018] A kind of chemical vapor deposition carbon of the present invention and vapor phase siliconizing process are combined to prepare SiC f / SiC composite material method, comprising the following steps:

[0019] 1. SiC fiber weaving: SiC fiber is used as raw material, and SiC fiber braided parts are prepared by three-dimensional weaving process;

[0020] 2. Chemical vapor deposition SiC coating: place the SiC fiber braid prepared above in a vacuum furnace for the first chemical vapor deposition, the deposition raw material (ie precursor) is trichloromethylsilane, and the deposition temperature is 1150°C; The carrier gas is H 2 , H 2 The flow rate is 0.01m 3 h -1 ; The dilution gas is argon, and the flow rate of argon is 0.03m 3 h -1 ; The deposition pressure is 5kPa, the deposition time is 40h, and the thickness of the SiC coating obtained after deposition is 20 μm;

[0021] 3. Chemical vapor deposition of carbon: using propylene gas as a raw material, carbon is depo...

Embodiment 2

[0026] A kind of chemical vapor deposition carbon of the present invention and vapor phase siliconizing process are combined to prepare SiC f / SiC composite material method, comprising the following steps:

[0027] 1. SiC fiber weaving: SiC fiber is used as raw material, and SiC fiber braided parts are prepared by three-dimensional weaving process;

[0028] 2. Chemical vapor deposition SiC coating: place the SiC fiber braid prepared above in a vacuum furnace for the first chemical vapor deposition, the deposition raw material is trichloromethylsilane, the deposition temperature is 1300 °C; the carrier gas is H 2 , H 2 The flow rate is 0.2m 3 h -1 ; The dilution gas is argon, and the flow rate of argon is 0.6m 3 h -1 ; The deposition pressure is 5kPa, the deposition time is 10h, and the thickness of the SiC coating obtained after deposition is 5 μm;

[0029] 3. Chemical vapor deposition of carbon: using propylene gas as a raw material, carbon is deposited on the SiC fiber b...

Embodiment 3

[0034] A kind of chemical vapor deposition carbon of the present invention and vapor phase siliconizing process are combined to prepare SiC f / SiC composite material method, comprising the following steps:

[0035] 1. SiC fiber weaving: SiC fiber is used as raw material, and SiC fiber braided parts are prepared by three-dimensional weaving process;

[0036] 2. Chemical vapor deposition SiC coating: place the SiC fiber braid prepared above in a vacuum furnace for the first chemical vapor deposition, the deposition raw material (ie precursor) is trichloromethylsilane, and the deposition temperature is 1500°C; The carrier gas is H 2 , H 2 The flow rate is 0.1m 3 h -1 ; The dilution gas is argon, and the flow rate of argon is 0.3m 3 h -1 ; The deposition pressure is 5kPa, the deposition time is 40h, and the thickness of the SiC coating obtained after deposition is 30 μm;

[0037] 3. Chemical vapor deposition of carbon: using methane gas as a raw material, carbon is deposite...

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Abstract

The present invention discloses a method for preparing SiCf / SiC compound material by combination of a chemical vapor carbon deposition process and a gas phase siliconizing process, comprising the following steps: taking SiC fiber as a raw material, adopting three dimensional weaving technology to prepare SiC fibre-woven pieces; taking trichloromethyl silane as a deposition material and carrying out a primary chemical vapor deposition on the SiC fibre-woven pieces with thickness of deposited SiC coating being 0.1-70 mum; then taking methane or propylene gas as a raw material and carrying out carbon deposition on SiC fibre-woven pieces by a secondary chemical vapor deposition, thus obtaining SiCf / C midbody; finally, taking simple substance silicon as a raw material and carrying out siliconizing on the SiCf / C midbody by the gas phase siliconizing process, thus obtaining the SiCf / SiC compound material. The method of the present invention has the advantages of short preparation cycle and low cost, thus being capable of preparing SiCf / SiC composite material featuring high compactness, high mechanical property and thermal conduction.

Description

technical field [0001] The invention relates to a method for preparing SiC-based composite materials, in particular to a method for preparing SiC by combining chemical vapor deposition carbon and vapor phase siliconizing process f / SiC composite method. Background technique [0002] Due to the bonding characteristics of its molecular structure, SiC ceramics lack plastic deformation ability and are brittle, which seriously affects their application as structural materials. SiC ceramics are reinforced with SiC fibers. During the fracture process, the material absorbs energy through mechanisms such as crack deflection, fiber breakage, and fiber pull-out, which enhances the strength and toughness of the material. [0003] SiC f / SiC composite material is the most ideal new-generation high-temperature structural material in the fields of aerospace and atomic energy. It has high strength, high rigidity, high hardness, wear resistance, corrosion resistance, high temperature oxida...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/622
Inventor 周新贵张长瑞吴宜灿王军黄群英曹英斌刘荣军王洪磊于海蛟赵爽罗征黄泽兰
Owner NAT UNIV OF DEFENSE TECH
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