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Method for preparing ZnO nanowire array

A chemical method and aqueous solution technology, which is applied in the field of controllable preparation of acicular and hexagonal columnar ZnO nanowire arrays, can solve the problems of limitation, long reaction time, and low deposition rate, and achieve low cost, easy operation, and high deposition rate Effect

Inactive Publication Date: 2012-01-11
LANZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

From the perspective of these technologies for preparing ZnO nanowire arrays, there are disadvantages such as long reaction time, low deposition rate, high temperature and high pressure, and difficult microstructure control.
In addition, most of the existing technologies are to prepare ZnO nanowires on the ZnO sublayer substrate. Since the sublayer is a semiconductor, this structure may be subject to certain restrictions in application.

Method used

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  • Method for preparing ZnO nanowire array
  • Method for preparing ZnO nanowire array
  • Method for preparing ZnO nanowire array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Cut the glass into a substrate with a size of 12×24×0.5mm, and plate Ag on the glass substrate according to the following method: ultrasonically clean the glass substrate in distilled water, alcohol, and acetone solutions to remove impurities and oil stains on the surface;

[0027] Immerse the cleaned substrate into 5-10g / l SnCl at room temperature 2 In the sensitizing solution mixed with 0.08M hydrochloric acid, soak for 0.5 to 8 minutes;

[0028] After taking it out, immerse it in distilled water for about 2 to 40 seconds;

[0029] Then take it out, and then immerse the glass substrate into 1-10g / l normal temperature AgNO 3 In the activated water solution, soak for 1 to 10 minutes;

[0030] Repeat steps b-d several times until the glass substrate material changes from bright and transparent to brown, indicating that the activation is successful.

[0031] The core of the above steps is to generate a Sn 2+ Reduced Ag + It is the oxidation-reduction reaction of simp...

Embodiment 2

[0035] The preparation of the Ag-coated glass substrate was the same as in Example 1.

[0036] Prepare 50mM Zn(NO 3 ) 2 Mix 50ml of solution with 10mM DMAB, place in a 90°C water bath, immerse the substrate in it, and react for 30 minutes to form a hexagonal columnar ZnO nanowire array. SEM photos are attached Figure 4 , it can be seen that the diameter of the nanowire is 80nm and the length is about 300nm.

[0037] The condition for generating hexagonal columnar ZnO nanowire arrays is to control the Zn(NO 3 ) 2 The concentration is between 20-70mM. We found experimentally that more than 80mM Zn(NO 3 ) 2 Concentration is not conducive to obtaining nanowire arrays, but will prepare sheet or polycrystalline ZnO thin films.

Embodiment 3

[0039] A Cu sheet (15×15×0.7 mm) polished with 1500 mesh sandpaper was immersed in the solution described in Example 1, and kept in a water bath at 90° C. for 30 minutes. SEM photos are attached Figure 5 , the plush surface is the needle-shaped ZnO nanowire array, with an average diameter of 40nm and a length of about 300nm.

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Abstract

The invention relates to a controllable preparation method of needle-shaped and hexagonal columnar ZnO nanowire arrays in the technical field of ZnO nano-material preparation. The method for preparing a ZnO film comprises the following steps of: firstly preparing a silver film or a copper film on the substrate material, and then immersing the substrate into 5-120mM zinc nitrate aqueous solution and 10-30mM dimethyl amine boron alkane aqueous solution, the total volume of which is 50ml, keeping the temperature of the solution within 60-90 DEG C, and finally obtaining a zinc oxide film on the substrate after full reaction. The preparation method can realize the forming of the copper or silver film on the substrate with a magnetron sputtering method, or a vacuum evaporation method, or a vacuum sputtering method, and can also polish the surface of the substrate of copper so as to obtain a surface on which zinc oxide Nazi arrays can grow.

Description

technical field [0001] The invention relates to a preparation method of ZnO thin film, in particular to a controllable preparation method of needle-shaped and hexagonal columnar ZnO nanowire arrays in the technical field of preparation of ZnO nanometer materials. Background technique [0002] One-dimensional ZnO nanomaterials have unique electrical, optical, photoelectric and piezoelectric properties, especially ZnO nanowire arrays in the form of arrays have a wide range of application values, such as in nanogenerators, solar cells, field emission electrons, optical Catalysis, sensors and lasers and other fields. The optical and electrical properties of ZnO nanomaterials are very sensitive to their own microstructure, so it is very important to effectively control the growth and microstructure of ZnO nanowires. [0003] The preparation methods of one-dimensional ZnO nanomaterials are divided into two categories: gas phase method and liquid phase method. Gas phase methods in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24C23C14/35C23C28/00C23C22/05C23C14/14C23C14/34C03C17/36
Inventor 李建功田强王谦黄娟娟张旭东王花枝
Owner LANZHOU UNIVERSITY
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