Preparation method of CdTe film solar cell

A technology of solar cells and thin films, which is applied in the manufacture of circuits, electrical components, and final products. It can solve problems such as understanding and scattered CdTe solar cells, and achieve the effects of increasing effectiveness, reducing intermediate pollution links, and improving battery efficiency.

Inactive Publication Date: 2009-12-23

上海联孚新能源科技集团有限公司

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Problems solved by technology

However, at present, people's understanding of the characteristics and preparation metho...

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Method used

[0032] Through the solar cell obtained above, after using the solar simulator test, the result shows that the photoelectric conversion efficiency of the thin film solar cell is very good, and the cell efficiency is greater than 15%....

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Abstract

The invention discloses a preparation method of a CdTe film solar cell; a CdTe film adopts a near space sublimation method to prepare a CdS/CdTe cell on transparent conductive glass, a Ni back electrode is obtained by adopting magnetron sputtering. The preparation method comprises the following steps: firstly, carrying out transparent glass substrate pre-treatment; preparing an In2O3: F transparent conductive film; using the near space sublimation method to grow a CdS film on the prepared transparent conductive film; using the near space sublimation method to grow the CdTe film on the prepared CdS film, and using CdCl2 to carry out annealing treatment on the film to cause a CdS/CdTe interface to be recombined; using a magnetron sputtering instrument to sputter the Ni back electrode on the CdTe surface, and annealing to form ohm contact at high temperature; obtaining the effective CdTe film solar cell. In the invention, the magnetron sputtering instrument is connected with a near space subliming furnace by a gate valve, a magnetic manipulator is used to deliver samples, and the whole procedures are automatically finished under vacuum environment after the step that the glass substrate enters a pre-treatment chamber.

Application Domain

Vacuum evaporation coatingSputtering coating +3

Technology Topic

Electrical batteryElectrically conductive +9

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Experimental program(1)

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[0024] The CdTe thin film solar cell is prepared according to the following preparation process:

[0025] (1) Pretreatment of transparent glass substrate 1: 1713 glass is used as deposition substrate 1. Acetone ultrasonic cleaning is used for 10 minutes to remove grease on the surface, and then deionized water ultrasonic cleaning for 10 minutes to remove impurities on the glass surface; finally, the glass is dried and placed in a pretreatment chamber, and the glass substrate 1 is cleaned by plasma.

[0026] (2) Preparation of In 2 O 3 : F transparent conductive film 2: transfer the transparent glass substrate 1 from the robotic arm 10 to the sample stage of the magnetron sputtering instrument 9, and the sputtering target is high-purity In 2 O 3. First use a vacuum pump to vacuum the sputtering chamber to 3Pa, and then use a molecular pump to vacuum the reaction chamber to 1×10 -3 Pa. Ar gas and 5% CHF 3 , Adjust the flow rate to 30ml/min; adjust the reaction pressure to 0.2Pa; sputtering power 200W; sputtering time 0.5h.

[0027] (3) CdS thin film growth 3: The transparent glass substrate 1 prepared with the transparent conductive film 2 (TCO) is transferred to the near-space sublimation furnace A 7 sample stage by the robot arm 10, and the sublimation source is high-purity CdS powder. First use a vacuum pump to vacuum the sublimation furnace to 3Pa, and then use a molecular pump to vacuum the sublimation furnace to 1×10 -3Pa; pass in 50% Ar gas and 50% O 2 , Adjust the flow rate to 10ml/min; adjust the air pressure to 1000Pa; adjust the infrared halogen lamp so that the sublimation source temperature is 550°C, the substrate temperature is 500°C, the distance between the source and the substrate is 4mm, and the sublimation time is 6s.

[0028] (4) Annealing treatment of CdS film 3: After preparing CdS film 3, turn off the sublimation source, and pass in 80% Ar gas and 20% O 2 , Keep the substrate temperature at 400℃ for 20min annealing treatment.

[0029] (5) Growing CdTe thin film 4: The annealed CdS thin film 3 is transferred by the robotic arm 10 to the sample stage of the near-space sublimation furnace B8, and the sublimation source is high-purity CdTe powder. First use a vacuum pump to vacuum the sublimation furnace to 5Pa, and then use a molecular pump to vacuum the sublimation furnace to 1×10 -3 Pa; Enter Ar gas, adjust the flow rate to 10ml/min; adjust the air pressure to 800Pa; adjust the infrared halogen lamp to make the sublimation source temperature 600℃; the substrate temperature is 500℃, the distance between the source and the substrate is 5mm; the sublimation time is 2min .

[0030] (6) Annealing treatment of CdTe thin film 4: transfer the substrate of the prepared CdTe thin film 4 by the robot arm 10 to the sample stage of the magnetron sputtering instrument 9, and the sputtering target is high-purity CdCl 2 , First use a vacuum pump to vacuum the sputtering chamber of the magnetron sputtering instrument 9 to 5Pa, and then use a molecular pump to vacuum the reaction chamber to 1×10 -3 Pa is below; Ar gas is introduced, and the air pressure is adjusted to 0.2 Pa; the sputtering power is 150W; the sputtering time is 10min. After the sputtering is completed, continue to pass in Ar gas as a protective gas, and keep the substrate temperature at 450° C. for annealing for 15 minutes.

[0031] (7) Preparation of back electrode 5: The back electrode 5 is prepared in the sputtering chamber of the magnetron magnetron sputtering apparatus 9. The sputtering target is high-purity Ni. First, the sputtering chamber is evacuated to 3 Pa with a vacuum pump, and then molecular The pump evacuates the reaction chamber to 1×10 -3 Pa below. Into Ar gas, adjust the air pressure to 0.3Pa; the sputtering power is 200W; the sputtering time is 20min; finally, the thin film battery is annealed in Ar gas at 400°C for 1 hour. Make the electrode form a better ohmic contact.

[0032] After testing the solar cell prepared above with a solar simulator, the result shows that the photoelectric conversion efficiency of the thin-film solar cell is very good, and the cell efficiency is greater than 15%. By using CSS technology to epitaxially grow CdTe thin-film batteries on glass substrates, the growth of materials and the thickness of each layer of materials can be precisely controlled, thereby further improving the efficiency of solar cells.

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Classification and recommendation of technical efficacy words

Simple preparation process

Nano porous high-temperature-insulating material taking thixotropic colloid as template agent and preparation method for high-temperature-insulating material

InactiveCN105314999AAvoid reunion and scatter problemsSimple preparation processCeramicwareThermal conductivityAerospace

Owner:浙江圣润纳米科技有限公司

Preparation method of CdTe film solar cell

AI-Extracted Technical Summary

Problems solved by technology

Method used

Abstract

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Example Embodiment

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Description & Claims & Application Information

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