Method for cleaning polycrystalline silicon device

A polysilicon and cleaning technology, applied in the field of cleaning, can solve problems such as unfavorable environmental protection, and achieve the effects of facilitating construction operations, solving system drying problems, and improving dust removal effect.

Inactive Publication Date: 2009-12-30
北京蓝星清洗有限公司
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the polysilicon cleaning process generally uses carbon tetrachloride for degreasing, and uses the volatility of carbon tetrachloride to achieve the purpose of drying, but carbon tetrachloride is a toxic substance, which is not conducive to environmental protection

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 3

[0083] Embodiment 3 immersion cleaning

[0084] Soaking and cleaning use lye as the main degreasing agent for cleaning, and the process is carried out according to the following steps:

[0085] Rinse with water → soak and degrease → rinse with pure water → rust removal → dry

[0086] (1) Washing with water

[0087] Rinse the pipe fittings or equipment surface with clean water.

[0088] The purpose of water rinsing is to remove the dirt on the surface of the cleaned parts.

[0089] (2) Soaking and cleaning

[0090] Put the pipe fittings or equipment in the immersion tank, the surface to be cleaned must be completely submerged under the immersion liquid level, or pour the immersion liquid into the equipment or parts that cannot be immersed.

[0091] The purpose of immersion cleaning is to use the cleaning solution to loosen, emulsify or disperse the oily substances into soluble substances, so that the surface of the pipe fittings or equipment is clean and oil-free.

[0092]...

Embodiment 4

[0107] Embodiment 4 wiping and cleaning

[0108] The process of wiping and cleaning is carried out in the following steps:

[0109] Water rinse → wipe cleaning → pure water rinse → degreasing → pure water rinse → dry

[0110] (1) Washing with water

[0111] Rinse the pipe fittings or equipment surface with clean water. The purpose of water rinsing is to remove the dirt on the surface of the cleaned parts.

[0112] (2) Wipe and clean

[0113] Wipe the surface of pipe fittings or equipment with an acid cleaner, which can be phosphoric acid, which can be purchased from the market.

[0114] (3) Rinse with pure water

[0115] Rinse the scrubbed fittings or equipment with a water jet.

[0116] (4) degreasing cleaning

[0117] Use a degreasing agent to degrease and clean the pipe fittings and equipment. The required agent is 2-5% by weight of sodium hydroxide solution, and a small amount of penetrating agent, accelerator and surfactant can also be added to the NaOH solution. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for cleaning a polycrystalline silicon device. The method comprises the following steps: (a) degreasing and cleaning the device with a degreasing agent; and (b) drying the cleaned device with oil-free dry air. The dew point of the used oil-free dry air is less than or equal to 40 DEG C below zero, the oil content is less than or equal to 0.01 mg/m<3>, the dust particle is less than or equal to 0.01mu m, and the flow is 40 to 60 m<3>/min. The degreasing agent is 2 to 5 weight percent of sodium hydroxide solution, the water for preparing the sodium hydroxide solution is purified water, the oil content of the purified water is zero, the electric conductivity is less than or equal to 15 us/cm, and the chlorine ions are less than or equal to 5 milligrams per liter. The method for cleaning the polycrystalline silicon device has simple process, is convenient to construct and operate, can achieve better dust removal effect by adopting the oil-free dry air, radically solves the drying problem of the system, ensures the drying before final production, and simultaneously can meet the requirement on environmental protection.

Description

technical field [0001] The invention relates to a cleaning method, in particular to a cleaning method for a polysilicon device. Background technique [0002] A polysilicon plant is a chemical system with high purity requirements, complex processes, and a large variety of equipment. Some polysilicon products also have the characteristics of metallurgical systems and semiconductor electronic components. Since the product requires high purity, correspondingly the pipelines for transporting product raw materials and the equipment for storing and purifying raw materials also require higher and stricter cleanliness. If it is not cleaned before installation, the rust residue and oil stains on the equipment cannot meet the cleanliness requirements only by the washing of system materials; if it is not dried, even a little water in the system will cause hydrolysis of raw materials, equipment corrosion and system blockage. With simple cleaning, it is impossible to completely remove th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/08C23G1/14C30B35/00
Inventor 焦永涛王波邢朝政
Owner 北京蓝星清洗有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap