Resistive random access memory and manufacturing method thereof
A technology of resistive memory and resistance value, applied in the field of flexible electronics, can solve the problems of limited storage density, residual solvent pollution, incompatibility, etc., and achieve the effect of improving storage density and good process compatibility
Inactive Publication Date: 2012-01-18
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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Problems solved by technology
At present, the preparation of existing organic resistive memory generally adopts spin-coating process (spin-coating) and hard mask (hard mask) technology, which is not compatible with CMOS standard photolithography process, and the device unit size is generally in the square millimeter Level, which limits its storage density, and the spin-coating process is prone to residual pollution after solvent volatilization and compatibility with other modules
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[0026] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
[0027] The process for preparing resistive variable memory in the present invention is shown in Figure 1,
[0028] 1) Using dry and wet oxidation technology or CVD technology to grow SiO on the silicon substrate 1 2 The insulating layer 2 has a thickness between 20nm and 500nm, as shown in Figure 1(a);
[0029] 2) Use tungsten in the conventional CMOS process as the bottom electrode 3, which is formed by physical vapor deposition (PVD) or other film-forming methods in the IC process, with a thickness between 200nm and 500nm, and is formed by standard photolithography technology to pattern the lower electrode, as shown in Figure 1(b);
[0030] 3) Growth of Parylene-C thin film 4 by using Polymer CVD technology, as shown in Fig. 1(c). The deposition adopts Polymer CVD equipment of parylene, the standard parameters of the process selection equip...
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The invention discloses a resistive random access memory (RAM) and a manufacturing method thereof, belonging to the technical field of integrated circuits. The resistive RAM is of MIM structure, wherein, the bottom layer and the top layer of the MIM structure are respectively provided with metal electrodes; the intermediate layer of the MIM structure is provided with a parylene polymer membrane. By adopting a parylene polymer as a resistive material of the resistive RAM, the invention can manufacture the resistive RAM with good resistive property and process compatibility. A preparation method of the parylene polymer adopts the chemical vapor deposition process at room temperature without by-products and solvent pollution, and is compatible with other modules of CMOS. Besides, the solution and solvents used in the parylene-resistant standard photolithography process can employ the CMOS standard photolithography process to manufacture the resistive RAM, thus increasing the memory density of the RAM.
Description
technical field [0001] The invention relates to a nonvolatile (Nonvolatile memory) resistive random access memory (RRAM: Resistive Random Access Memory) and a manufacturing method thereof, belonging to the technical fields of flexible electronics, polymer and CMOS hybrid integrated circuits. Background technique [0002] At present, the non-volatile memory on the market is mainly based on flash memory (Flash). With the continuous advancement of integrated circuit technology nodes and the continuous miniaturization of electronic devices, research and development of higher storage density, faster response speed, Storage technology with lower cost and simple process has become a research hotspot in the information field. After the flash memory technology has reached its physical limit and cannot continue to advance, the new generation of storage technology represented by Resistive RAM (RRAM) has become a research hotspot that has attracted much attention. [0003] Resistive va...
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IPC IPC(8): H01L51/00H10K99/00
Inventor 黄如邝永变唐昱
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP