Check patentability & draft patents in minutes with Patsnap Eureka AI!

Printable semiconductor structures and related methods of making and assembling

A semiconductor, structural technology, applied in the field of printable semiconductor structures and related manufacturing and assembly, which can solve the problems of damage, non-electronic characteristics of integrated electronic devices, cracking, etc.

Active Publication Date: 2012-06-20
THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, although many amorphous silicon, organic or hybrid organic-inorganic semiconductors can be compatible incorporated into plastic substrates and can be processed at relatively low temperatures, these materials do not have the integration capabilities that would provide good electronic properties. Electronic Characteristics of Electronic Devices
This mechanical stress can lead to damage to individual components, such as cracking, and can also degrade or break electrical contacts between device components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Printable semiconductor structures and related methods of making and assembling
  • Printable semiconductor structures and related methods of making and assembling
  • Printable semiconductor structures and related methods of making and assembling

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0105] Example 1 Aligned GaAs line arrays for flexible transistors, diodes and circuits printed on plastic substrates

[0106] GaAs line-aligned arrays with integrated ohmic contacts produced from high-quality single-crystal wafers using photolithography and anisotropic chemical etching provide a promising transistor for use on flexible plastic substrates, Materials for Schottky diodes, logic gates, and even more complex circuits. These devices exhibit excellent electrical and mechanical properties, both of which are important for the emerging field of low-cost, large-area flexible electronics, often called macroelectronics.

[0107] Micro- and nano-scale wires, ribbons, platelets, etc. of single-crystalline inorganic semiconductors are attractive for functional devices (e.g., optical devices, optoelectronic devices, electronic devices, sensor devices, etc.) that can be used in many applications. The building block of force. For example, Si nanowires synthesized by a "bottom...

Embodiment 2

[0119] Example 2: Gigahertz operation of a mechanically flexible transistor on a flexible plastic substrate

[0120] The combined use of GaAs wires with ohmic contacts formed from bulk wafers, soft lithographic transfer printing techniques, and optimized device designs enables the formation of mechanically flexible transistors on low-cost plastic substrates with individual device speeds in the gigahertz range and with High mechanical bendability. The methods disclosed herein include materials that are fabricated with limited lithographic image forming resolution and registration in a simple layout. This example describes the electrical and mechanical properties of high performance transistors. These results are of great importance in certain applications including, but not limited to, high-speed communications and computing, and emerging types of large-area electronic systems ("macroelectronic devices").

[0121] Large-area flexible electronic systems (ie, macroelectronic de...

Embodiment 3

[0144] Example 3 Mechanically Flexible Thin Film Transistor Using Ultra-Thin Silicon Ribbons Harvested from Bulk Wafers This Example introduces a thin film transistor using an aligned array of thin (submicron) Aligned arrays of silicon thin (submicron) ribbons were produced by lithographic patterning and anisotropic etching of bulk silicon (111) wafers. Devices incorporating such ribbons printed onto thin plastic substrates showed good electrical properties as well as mechanical flexibility. Effective device mobility, as estimated in the linear region, up to 360cm 2 V -1 the s -1 and on / off ratio > 10 3 . These results represent an important advance in low-cost methods for fabricating large-area, high-performance, mechanically flexible electronic systems for structural health monitoring, sensors, displays, and other applications.

[0145]Confinement-related properties and wide-ranging form factors make low-dimensional materials promising new applications in electronics, p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and / or nanosized semiconductor structures onto substrates, including large area substrates and / or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Description

[0001] Cross-references to related applications [0002] This application claims U.S. Patent Application No. 11 / 145,542, filed June 2, 2005, U.S. Patent Application No. 11 / 145,574, filed June 2, 2005, and International PCT Application No. .PCT / US05 / 19354 priority, hereby incorporated by reference, to the extent not inconsistent with the disclosure herein, the contents of all of these applications. Background technique [0003] Since the first demonstration of printed all-polymer transistors in 1994, potential new types of electronic systems that include flexible integrated electronics on plastic substrates have attracted considerable attention. [Gamier, F., Hajlaoui, R., Yassar, A. and Srivastava, P., Science, Vol. 265, pp. 1684-1686]. More recently, fundamental research has focused on developing new solution-processable materials for semiconductors, insulators, and semiconductor components for use in flexible plastic electronics. However, progress in the field of flexible e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302H01L21/8242H01L23/62H05K3/36H01R12/00H01L21/77
CPCH01L2924/0002
Inventor R·G·纳佐J·A·罗杰斯E·梅纳德李建宰姜达荣孙玉刚M·梅尔特朱正涛高興助S·麦克
Owner THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com