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Preparation method of solar microbattery based on random mesh carbon nanotube film

A technology of solar micro-battery and carbon nanotube thin film, which is applied in the manufacture of circuits, electrical components, and final products, etc., can solve the problems of complicated structure manufacturing process, unfavorable long-term stability of solar cell structure, etc., and achieves easy mass production and structure. Simple structure and high stability

Inactive Publication Date: 2011-06-01
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the complex fabrication process of its structure and the use of organic photosensitive dyes, it is not conducive to the long-term stability of the solar cell structure.

Method used

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  • Preparation method of solar microbattery based on random mesh carbon nanotube film
  • Preparation method of solar microbattery based on random mesh carbon nanotube film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] In this example, a self-assembly method is used to prepare a disordered network single-walled carbon nanotube film, and a disordered networked semiconducting single-walled carbon nanotube film is obtained by using a methane plasma etching method. A pair of symmetrical metal electrodes constitutes an asymmetric solar micro battery.

[0029] Soak the cleaned silicon wafer with a silicon dioxide layer on the surface in H 2 SO 4 and H 2 o 2 The surface of the silicon wafer is made hydrophilic in the mixed solution, where H 2 SO 4 and H 2 o 2 The ratio range is 2:1, the soaking time is 10 hours, and the soaking temperature is 80 degrees; then the silicon wafer cleaned by deionized water is soaked in the APS solution, so that the single-layer APS is modified to a hydrophilic carbon dioxide Silicon surface, immersion time is 10h, H in APS solution 2 The ratio range of O and APS is 100:1; then the silicon wafers cleaned with deionized water and dried are placed in a sus...

Embodiment 2

[0033] In this example, a self-assembly method is used to prepare a disordered network single-walled carbon nanotube film, and a disordered networked semiconducting single-walled carbon nanotube film is obtained by using a methane plasma etching method. A pair of symmetrical metal electrodes constitutes an asymmetric solar micro battery.

[0034] Soak the cleaned silicon wafer with a silicon dioxide layer on the surface in H 2 SO 4 and H 2 o 2 The surface of the silicon wafer is made hydrophilic in the mixed solution, where H 2 SO 4 and H 2 o 2 The ratio range is 6:1, the soaking time is 24 hours, and the soaking temperature is 100 degrees; then the silicon wafer cleaned by deionized water is soaked in the APS solution so that the single layer of APS is modified to the hydrophilic silica surface , soaking time is 24h, H in APS solution 2 The ratio range of O and APS is 10000:1; then the silicon wafers cleaned with deionized water and dried are placed in a suspension of...

Embodiment 3

[0038] In this example, a self-assembly method is used to prepare a disordered network single-walled carbon nanotube film, and a disordered networked semiconducting single-walled carbon nanotube film is obtained by using a methane plasma etching method. A pair of symmetrical metal electrodes constitutes an asymmetric solar micro battery.

[0039] Soak the cleaned silicon wafer with a silicon dioxide layer on the surface in H 2 SO 4 and H 2 o 2 The surface of the silicon wafer is made hydrophilic in the mixed solution, where H 2 SO 4 and H 2 o 2 The ratio range is 1:1, the soaking time is 2 hours, and the soaking temperature is 20 degrees; then the silicon wafer cleaned by deionized water is soaked in the APS solution so that the single layer of APS is modified to hydrophilic silica Surface, immersion time is 2h, H in APS solution 2 The ratio range of O and APS is 20:1; then the silicon wafers cleaned with deionized water and dried are placed in a suspension of single-w...

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Abstract

The invention relates to a preparation method of a solar microbattery based on a random mesh carbon nanotube film in the energy field. The random mesh carbon nanotube film is prepared by adopting a self assembly technology; a selective methane plasma etching method or a large-current blowing method is adopted to remove a metallic carbon nanotube to obtain a large-area random mesh semi-conductive carbon nanotube film as a photosensitive material of a solar microbattery; and metals with an asymmetrical work function are respectively used as asymmetrical electrodes of a device to contact with the semi-conductive carbon nanotube and respectively form asymmetrical junctions at both contact ends of the semi-conductive carbon nanotube so as to form a strong internal electric field in the single-wall semi-conductive carbon nanotube and stimulate the separation of a photo-generated electron-hole pair. The preparation process of the solar microbattery is simple and easy to operate and can realize mass production. The solar microbattery has higher photoelectric conversion efficiency during simulating solar light irradiation and has wide application in the field of photovoltaic devices.

Description

technical field [0001] The invention relates to a method for preparing a solar cell in the energy field, in particular to a method for preparing a solar micro-cell based on a disordered network carbon nanotube film. Background technique [0002] The first-generation solar cells are traditional solar cells based on monocrystalline silicon and polycrystalline silicon bulk materials. Because of the high cost of materials, the manufacturing price is high. Turn to the development of the second-generation solar cells manufactured by thin-film technology. Because of the photoelectric conversion efficiency Low, there are difficulties in developing widespread use. People turn to emerging nano-semiconductor materials, such as: one-dimensional semiconducting carbon nanotubes have a series of discrete energy levels, which can match visible light and infrared light in sunlight, and thus have a strong absorption capacity for sunlight: the mobility of electrons is Silicon is 100 times hig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈长鑫张伟潘晓艳张亚非
Owner SHANGHAI JIAO TONG UNIV
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