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Bismuthic acid barium series negative temperature coefficient semiconductor ceramic and preparation method thereof

A negative temperature coefficient, semiconductor technology, applied to resistors with negative temperature coefficients and other directions, can solve problems such as no reports, and achieve the effects of good electrical conductivity, overcoming large room temperature resistivity, and simple preparation process

Inactive Publication Date: 2010-03-03
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, many patents have reported the preparation method of NTC materials, but the BaBiO 3 Department of NTCR ceramics has not been reported

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] By Bi 2 o 3 、BaCO 3 , La 2 o 3 and Sb 2 o 3 Synthesized as raw material (Ba 0.999 La 0.001 )(Sb 0.01 Bi 0.99 )O 3 .

[0019] Preparation:

[0020] 1) According to the chemical formula (Ba 0.999 La 0.001 )(Sb 0.01 Bi 0.99 )O 3 Carry out batching, be the standard of 1:1:2 to add agate ball and deionized water with the mass ratio of ball, material, water, ball mill 8 hours, dry;

[0021] 2) drying the obtained material and roasting at 900°C, and keeping it warm for 4 hours;

[0022] 3) Add a polyvinyl alcohol solution with a concentration of 2 wt% to the roasted material, dry the mixture and then granulate it, then pass through a 60-mesh sieve;

[0023] 4) Dry pressing at 200MPa, the diameter of the sample is 18mm, and the thickness is 2mm;

[0024] 5) The obtained sample was sintered at 970°C, kept for 2 hours, under an air atmosphere, and cooled with the furnace;

[0025] 6) Screen-print the low-temperature silver electrode paste on both sides of the ...

Embodiment 2

[0027] By Bi 2 o 3 、BaCO 3 , La 2 o 3 and Sb 2 o 3 Synthesized as raw material (Ba 0.998 La 0.002 )(Sb 0.05 Bi 0.95 )O 3 .

[0028] Preparation:

[0029] According to the chemical formula (Ba 0.998 La 0.002 )(Sb 0.05 Bi 0.95 )O 3 Batching, sintering temperature is 1020 ℃, other preparation process steps are the same as embodiment 1.

Embodiment 3

[0031] By Bi 2 o 3 、BaCO 3 , La 2 o 3 and Sb 2 o 3 Synthesized as raw material (Ba 0.995 La 0.005 )(Sb 0.08 Bi 0.92 )O 3 .

[0032] Preparation:

[0033] According to the chemical formula (Ba 0.995 La 0.005 )(Sb 0.08 Bi 0.92 )O 3 Batching, sintering temperature is 1040 ℃, other preparation process steps are the same as embodiment 1.

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Abstract

The invention relates to thermistance material, in particular to a ceramic material taking BaBio3 as base phase and a preparation method thereof. Chemical general formula of the bismuthic acid bariumseries negative temperature coefficient semiconductor ceramic is (Ba<1-x>A<x>) (Sb<y>Bi<1-y>)O3, wherein A in the formula is rare-earth metal elements, x is larger than zero less than or equal to 0.01, and y is larger than zero and less than 0.1. The semiconductor ceramic can be prepared by using the traditional electronic ceramic technology which specifically comprises six steps which are material proportioning, roasting, pelleting, compression, sintering and electrode preparation. Compared with the prior art, the preparation technology of the bismuthic acid barium series negative temperaturecoefficient semiconductor ceramic has simple technology, good electric conduction performance, adjustable room temperature electrical resistivity and temperature coefficient, overcomes the shortcoming of big room temperature electrical resistivity of the existing negative temperature coefficient thermistor semiconductor ceramic, and can realize negative temperature coefficient thermistance semiconductor ceramic, which has 35 omega.cm of the room temperature electrical resistivity, 3147K of the B value of the temperature coefficient and takes BaBio3 as base phase.

Description

technical field [0001] The invention relates to a thermistor material, in particular to a BaBiO 3 A ceramic material as the base phase; the invention also relates to a method for the preparation of this material. Background technique [0002] Negative temperature coefficient thermistors (abbreviated as NTCR, the same below) are widely used in temperature measurement, suppression of inrush current and temperature compensation. At present, most NTCR ceramic materials are spinel structures, and the negative temperature coefficient (NTC for short, the same below) ceramics of this structure generally have high room temperature resistivity, and the resistance value is not easy to control. It is suitable for low voltage and miniaturization Devices require the room temperature resistivity of NTCR materials to be as low as possible, but current research shows that reducing the room temperature resistivity of materials will reduce the temperature coefficient and deteriorate the NTC c...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622H01C7/04
Inventor 李旭琼骆颖刘心宇周昌荣
Owner GUILIN UNIV OF ELECTRONIC TECH