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Method for growing CdO nanowire bundle

A nanowire and catalyst technology, which is applied in the field of growing CdO nanowire bundles by vacuum thermal evaporation, can solve the problems of difficult nanostructure, difficult control of conditions, and high cost of electrochemical deposition, and achieves large deposition area, good crystallinity, and high shape. uniform effect

Inactive Publication Date: 2010-04-14
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The cost of electrochemical deposition is relatively high, and when using chemical vapor deposition to prepare cadmium oxide nanorods, oxygen and carrier gas need to be introduced, the conditions are not easy to control, and it is difficult to obtain large-area uniform nanostructures on various substrates

Method used

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  • Method for growing CdO nanowire bundle
  • Method for growing CdO nanowire bundle
  • Method for growing CdO nanowire bundle

Examples

Experimental program
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Effect test

Embodiment 1

[0021] Using high-purity CdO powder (99.99%) as raw material, high-purity metal bismuth powder as catalyst, the two are uniformly mixed according to 1mol:0.05mol and placed on the molybdenum boat heater as the source, and the molybdenum sheet is placed as the substrate on the evaporation source About 2.5cm above. Airtight evaporation chamber, when the vacuum degree reaches 8×10 -3 After Pa, the current was gradually increased to 110A at a current increase rate of 3A / min and then kept for 10 minutes. Brown deposits were obtained on the substrate surface. The surface morphology of the deposit is observed by SEM as a nanowire bundle, and the diameter of the nanowires that make up the bundle is 50-60nm, such as figure 2 . XRD analysis results show that the main phase of the product is cubic structure CdO, such as figure 1 .

Embodiment 2

[0023] Adopt high-purity CdO powder (99.99%) as raw material, high-purity metal bismuth powder as catalyst, after the two are evenly mixed by the ratio of 1mol: 0.1mol, the powder obtained is directly placed on the molybdenum boat heater, and the graphite sheet is The substrate was placed approximately 3 mm above the evaporation source. Airtight evaporation chamber, when the vacuum degree reaches 8×10 -3 After Pa, the current was gradually increased to 120A at a rate of 3.5A / min and kept for 15 minutes. There are brown deposits on the substrate surface. The surface morphology of the substrate deposit observed by SEM is a nanowire chain with a length of 1-2 μm and a diameter of 50-80 nm, such as image 3 .

Embodiment 3

[0025] High-purity CdO powder (99.99%) is used as raw material, high-purity metal bismuth powder is used as catalyst, the two are uniformly mixed at a ratio of 1mol:0.3mol, and the powder is directly placed on the molybdenum boat heater, and ITO glass is used as the substrate Place it about 4cm above the evaporation source. Airtight evaporation chamber, when the vacuum degree reaches 6×10 -3 After Pa, the current was gradually increased to 120A at a rate of 2.5A / min for 15 minutes. There are brown deposits on the substrate surface. The surface morphology of the deposit observed by SEM is a uniform distribution of nanorods with a length of 1-2 μm and a diameter of 60-100 nm, such as Figure 4 .

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Abstract

The invention discloses a method for growing a group II-VI semiconductor compound CdO nanowire bundle by vacuum thermal evaporation under the assistance of a catalyst, comprising the following processes: evenly mixing CdO power and metallic Bi powder according to the mol ratio of 1: 0.02-1: 0.3 to prepare raw material; putting into a resistance heating boat made of molybdenum sheets, and placing various substrates at the position 3mm-4cm above the boat; closing an evaporating furnace, electrifying the resistance heating boat with the electric current of 110-180A after a cavity of the vacuum vaporizing furnace in which an evaporation deposition system is arranged reaches a vacuum environment of 2*10-2-5*10-3Pa, and preserving for 5-15 minutes, and then carrying out evaporation deposition. The prepared cadmium oxide nano rod is CdO with a crystalline cubic phase structure; in addition, the obtained cadmium oxide nanowire bundle is suitable for a plurality of substrates and has the advantages of large deposition area and evener appearance; and the method is simple, easy to popularize and suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of nanostructure growth, and relates to a method for growing CdO nanowire bundles by vacuum thermal evaporation. Background technique [0002] Cubic bulk CdO is an N-type II-VI semiconductor material with a direct bandgap of 2.5eV and an indirect bandgap of 1.98eV. In the field of optoelectronics, it is a very important semiconductor material. CdO is an alkaline rechargeable negative electrode active material of nickel-cadmium series, its performance directly affects the quality of the battery, and is a key material that restricts the overall performance of nickel-cadmium batteries. In recent years, CdO has been widely used in field emission grid displays and is considered as one of the most promising transparent conductive oxides. [0003] The development of nanomaterials shows that nanoscale materials may have more excellent properties, and devices with excellent performance can be prepared. Among nanomaterials, ...

Claims

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Application Information

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IPC IPC(8): C01G11/00B82B3/00
Inventor 吴荣简基康杨林钰刘莉丽孙言飞郑毓峰
Owner XINJIANG UNIVERSITY
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