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Method for cleaning metal residue

A metal residue and wet cleaning technology, which is applied in the field of semiconductor manufacturing, can solve problems such as device reliability hazards, inability to completely remove Pt, and adverse effects on device electrical performance.

Inactive Publication Date: 2010-06-09
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the problem is that as the feature size of semiconductor devices develops to 65nm and below, more NiPtSi is used as the ohmic contact material. x Instead of titanium silicide and cobalt silicide, the traditional wet cleaning process removes and forms metal silicide NiPtSi x When the metal residue NiPt in the process is used, the actual effect is not ideal, and some Pt ​​cannot be completely removed, and will remain on the surface of the dielectric layer, the sidewall of the contact hole or the sidewall of the gate region, which will seriously damage the reliability of the device.
[0007] Similarly, Pt-containing metal residues may also exist in other processes of semiconductor manufacturing, and the above-mentioned traditional SPM solution and APM solution combined cleaning method cannot completely remove Pt in the metal residues, which will affect the electrical performance of the device. produce adverse effects

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Examples

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Embodiment 1

[0050] The preferred embodiment of the metal residue removal method will be described in detail with the background of the metal silicide fabrication process. figure 1 It is a flowchart of the removal method of the metal residue.

[0051] Step S1: providing a wafer with a semiconductor structure with Pt-containing metal residues on the semiconductor structure.

[0052] Specifically, such as figure 2 As shown, a substrate 100 is provided, and the substrate 100 may be a wafer of single crystal silicon. There is a semiconductor device in the substrate 100, for example, the semiconductor device is a metal oxide semiconductor (MOS) transistor, figure 2 Only two MOS transistors are shown in , and the two MOS transistors have shallow trench isolation (STI) 109 to isolate different semiconductor devices.

[0053] The MOS transistor includes a source 102 , a drain 104 and a gate 106 with a gate oxide layer 108 between the substrate 100 and the gate 106 . There is also a gate spac...

Embodiment 2

[0067] Figure 7 It is a flowchart of the method for removing metal residues described in this embodiment.

[0068] Referring to step A1 : providing a wafer having a semiconductor structure with Pt-containing metal residues thereon. This step A1 is the same as the step S1 of the first embodiment, for details, please refer to Figure 2 to Figure 5 , which will not be repeated here.

[0069] Refer to step A2: using SPM solution to wet clean the wafer with MOS transistors on the substrate 100 to remove the metal Ni in the metal residue 111 . Described SPM solution is sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 o 2 ) mixed solution, its volume ratio concentration is H 2 SO 4 :H 2 o 2 =(3-5):1, during cleaning, the pre-configured SPM solution is atomized and sprayed onto the wafer surface, the temperature of the SPM solution is controlled in the range of 80°C to 99°C, for example, 85°C, 90°C , 95°C, within this temperature range, the SPM solution can fully react w...

Embodiment 3

[0077] Figure 8 It is a flowchart of the method for removing metal residues described in this embodiment.

[0078] Referring to step B1: providing a wafer having a semiconductor structure with Pt-containing metal residues thereon. This step B1 is the same as the step S1 of the first embodiment, for details, please refer to Figure 2 to Figure 5 , which will not be repeated here.

[0079] Referring to step B2: using the first SPM solution to wet-clean the substrate 100 to remove metal Ni in the metal residue 111 . The first SPM solution is sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 o 2 ) mixed solution, its volume ratio concentration is H 2 SO 4 :H 2 o 2 =(3-5): 1, during cleaning, spray the pre-configured first SPM solution onto the wafer surface after atomization, the temperature of the first SPM solution is controlled in the range of 80°C to 99°C, for example, 85°C, 90°C, 95°C, within this temperature range, the first SPM solution can fully react with m...

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Abstract

The invention discloses a method for cleaning a metal residue, which comprises the following steps: providing a wafer with a semiconductor structure, wherein the metal residue containing Pt remains on the semiconductor structure; and cleaning the wafer with HPM solution by a wet method and then cleaning the wafer with APM solution by the wet method so as to remove the metal residue. The method for cleaning the metal residue can fully remove the metal residue containing Pt and improves the reliability of an apparatus.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for cleaning metal residues. Background technique [0002] With the increasing demand for high integration and high performance of ultra-large-scale integrated circuits, semiconductor technology is developing towards technology nodes with 65nm or even smaller feature sizes, and the computing speed of chips is obviously affected by the resistance capacitance delay (Resistance Capacitance) caused by metal wires. Delay Time, RC DelayTime). In order to reduce the influence of RC delay, metal silicide materials with lower resistivity, such as titanium silicide, cobalt silicide, nickel silicide, etc., can be used as the ohmic contact between the metal wire and the active region. [0003] NiPtSi x It is also a metal silicide with low resistivity. It has the characteristics of low formation temperature and good thermal stability, so it is usually used as th...

Claims

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Application Information

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IPC IPC(8): C23G1/02
Inventor 胡亚兰
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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