Light-sensitive resin composite and method for manufacturing printed circuit board using same

Abstract

The invention relates to a light-sensitive resin composite and a method for manufacturing a printed circuit board using the same. The resin composition comprises the following components: (A) an adhesive polymer, (B) a light polymeric compound with an ethylene unsaturated bond and (C1) a stilbazole compound represented by the following general formula (1); in the formula (1), R1, R2 and R3 respectively represent alkyl with the carbon number of 1-20, alkoxyl with the carbon number of 1-6, alkyl ester with the carbon number of 1-6, amido, and alkyl amido, carboxyl, cyanogen group, nitryl or (methyl) acryloyl group with the carbon number of 1-20 independently, m and n respectively represent the integer of 1-3 independently, and a, b and c respectively represent the integer of 0-5 independently.

Description

technical field

[0001] The present invention relates to a photosensitive resin composition, a photosensitive element using the same, a method for forming a resist pattern, and a method for manufacturing a printed wiring board. Background technique

[0002] Microelectronic circuits such as printed circuit boards, plasma display circuit boards, liquid crystal display circuit boards, large-scale integrated circuits, thin film transistors, and semiconductor packages are generally manufactured through the process of forming resist patterns by so-called photolithography. In photolithography, for example, after exposing a photosensitive resin composition layer provided on a substrate by irradiating light such as ultraviolet rays through a mask film having a predetermined pattern, it is developed by a developer whose solubility is different between the exposed part and the non-exposed part. A resist pattern is formed, and the resist pattern is used as a mask to perform plating proce...

Examples

Embodiment

[0096] Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited thereto.

[0097] The composition was compounded according to the compounding composition (unit: part by mass) shown in following Table 1 and 2, and the solution of the photosensitive resin composition of Examples 1-6 and Comparative Examples 1 and 2 was obtained.

[0098] [Table 1]

[0099]

[0100] [Table 2]

[0101]

[0102] In addition, each component in Tables 1-2 is as follows.

[0103] Bisphenol A skeleton EO modified dimethacrylate: manufactured by Hitachi Chemical Industry Co., Ltd. (Hitachi Chemical Industry Co., Ltd.), trade name "FA-321M";

[0104] MAP-PDSP: 1,2,3,5,6,7-Hexahydro-8-phenyl-3,5-bis[(4-dimethylaminophenyl)methylene]-dicyclopentacene pyridine;

[0105] EAP-PDSP: 1,2,3,5,6,7-Hexahydro-8-phenyl-3,5-bis[(4-diethylaminophenyl)methylene]-dicyclopentacene pyridine;

[0106] 3-MOP-PDSP: 1,2,3,5,6,7-Hexahydro-8-phenyl...

Synthetic example 1

[0114] Add dimethylaminobenzaldehyde (1.49g, 10mmol), cyclopentanone (0.42g, 5mmol), ammonium acetate (3.85g, 50mmol) and ethanol (25mL) into the flask, and stir to obtain a uniform reaction solution. Next, 1 mL of 30% hydrogen peroxide aqueous solution was added to the above reaction solution, refluxed for 1 hour, and left to stand overnight to precipitate the crude crystals of MAP-PDSP. The crude crystals were filtered, washed with acetone, and then recrystallized with acetone to obtain MAP-PDSP. Maximum Absorption Wavelength (λ max ) is 440nm.

Synthetic example 2

[0116] EAP-PDSP was obtained in the same manner as in Synthesis Example 1, except that diethylaminobenzaldehyde (1.77 g, 10 mmol) was used instead of dimethylaminobenzaldehyde (1.49 g, 10 mmol). Maximum Absorption Wavelength (λ max ) is 440nm.

technical field

[0001] The present invention relates to a photosensitive resin composition, a photosensitive element using the same, a method for forming a resist pattern, and a method for manufacturing a printed wiring board. Background technique

[0002] Microelectronic circuits such as printed circuit boards, plasma display circuit boards, liquid crystal display circuit boards, large-scale integrated circuits, thin film transistors, and semiconductor packages are generally manufactured through the process of forming resist patterns by so-called photolithography. In photolithography, for example, after exposing a photosensitive resin composition layer provided on a substrate by irradiating light such as ultraviolet rays through a mask film having a predetermined pattern, it is developed by a developer whose solubility is different between the exposed part and the non-exposed part. A resist pattern is formed, and the resist pattern is used as a mask to perform plating proce...

Examples

Embodiment

[0096] Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited thereto.

[0097] The composition was compounded according to the compounding composition (unit: part by mass) shown in following Table 1 and 2, and the solution of the photosensitive resin composition of Examples 1-6 and Comparative Examples 1 and 2 was obtained.

[0098] [Table 1]

[0099]

[0100] [Table 2]

[0101]

[0102] In addition, each component in Tables 1-2 is as follows.

[0103] Bisphenol A skeleton EO modified dimethacrylate: manufactured by Hitachi Chemical Industry Co., Ltd. (Hitachi Chemical Industry Co., Ltd.), trade name "FA-321M";

[0104] MAP-PDSP: 1,2,3,5,6,7-Hexahydro-8-phenyl-3,5-bis[(4-dimethylaminophenyl)methylene]-dicyclopentacene pyridine;

[0105] EAP-PDSP: 1,2,3,5,6,7-Hexahydro-8-phenyl-3,5-bis[(4-diethylaminophenyl)methylene]-dicyclopentacene pyridine;

[0106] 3-MOP-PDSP: 1,2,3,5,6,7-Hexahydro-8-phenyl...

Synthetic example 1

[0114] Add dimethylaminobenzaldehyde (1.49g, 10mmol), cyclopentanone (0.42g, 5mmol), ammonium acetate (3.85g, 50mmol) and ethanol (25mL) into the flask, and stir to obtain a uniform reaction solution. Next, 1 mL of 30% hydrogen peroxide aqueous solution was added to the above reaction solution, refluxed for 1 hour, and left to stand overnight to precipitate the crude crystals of MAP-PDSP. The crude crystals were filtered, washed with acetone, and then recrystallized with acetone to obtain MAP-PDSP. Maximum Absorption Wavelength (λ max ) is 440nm.

Synthetic example 2

[0116] EAP-PDSP was obtained in the same manner as in Synthesis Example 1, except that diethylaminobenzaldehyde (1.77 g, 10 mmol) was used instead of dimethylaminobenzaldehyde (1.49 g, 10 mmol). Maximum Absorption Wavelength (λ max ) is 440nm.

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