Organic electroluminescent device and preparation method thereof
An electroluminescent device, organic technology, applied in the direction of electric solid-state devices, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of quenching the concentration of small molecule organic fluorescent dyes, changing the color of light emission, reducing the brightness of light emission, etc. , to achieve the effects of easy realization of large-area display, improvement of utilization rate, and avoidance of concentration quenching
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Embodiment 1
[0093] Such as figure 2 As shown, the organic functional layer 3 in the structure of the device includes a hole transport layer 31 , a light emitting layer 32 , and an electron transport layer 33 .
[0094] The hole transport layer material of the device is NPB, the light emitting layer material is material 1, and the electron transport material is Alq 3 , The cathode layer is made of Mg:Ag alloy. The entire device structure is described as:
[0095] Glass substrate / ITO / NPB(50nm) / Material 1(10nm) / Alq 3 (30nm) / Mg:Ag(100nm)
[0096] The preparation method is as follows:
[0097] ①Use ethanol solution, acetone solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. Wherein the ITO film on the glass substrate is used as the anode layer of the device, the square resistance of the ITO film is 10Ω / □, and the film thickness is 180nm.
[0098] ②The dried substrate was moved into a vacuum ch...
Embodiment 2
[0105] Such as figure 2 As shown, the organic functional layer 3 in the structure of the device includes a hole transport layer 31 , a light emitting layer 32 , and an electron transport layer 33 .
[0106] The hole transport layer material of the device is NPB, the light emitting layer material is material 2, the electron transport material is TPBI, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:
[0107] Glass substrate / ITO / NPB(50nm) / Material 2(10nm) / TPBI(30nm) / Mg:Ag(100nm)
[0108] The fabrication process of the device is similar to that of Example 1.
[0109] For the current-voltage-brightness characteristic curve of the device and the luminescence spectrum curve of the device, please refer to the attached Figure 5 and 6 .
Embodiment 3
[0111] Such as Figure 7 As shown, the organic functional layer 3 in the structure of the device includes a light-emitting layer that doubles as a hole transport layer 34 and an electron transport layer 33 .
[0112] The light-emitting layer of the device doubles as the hole transport layer is a doping system of material 3 and PVK, and the electron transport material is Alq 3 , The cathode layer is made of Mg:Ag alloy. The entire device structure is described as:
[0113] Glass substrate / ITO / PVK: Material 3 / Alq 3 (30nm) / Mg:Ag(100nm)
[0114] The preparation method is as follows:
[0115] ①Use ethanol solution, acetone solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. Wherein the ITO film on the glass substrate is used as the anode layer of the device, the square resistance of the ITO film is 10Ω / □, and the film thickness is 180nm.
[0116] ②The dried substrate was moved into a...
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