Electron-irradiation resisting shielding material and method for preparing same

A technology of electron radiation and shielding materials, applied in the fields of magnetic/electric field shielding, chemical instruments and methods, electrical components, etc., can solve the problems of high energy of bremsstrahlung radiation and limitation of shielding effect, and achieve reduced movement speed and good shielding effect , the effect of high shielding efficiency

Inactive Publication Date: 2010-06-23
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the materials used for radiation shielding are usually materials with high atomic numbers such as tantalum, lead, and tungsten. Although they can effectively pre

Method used

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  • Electron-irradiation resisting shielding material and method for preparing same
  • Electron-irradiation resisting shielding material and method for preparing same
  • Electron-irradiation resisting shielding material and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] According to 75vol.% AlN (average particle size of 3 microns), 25vol.% W (average particle size of 5 microns), and 3vol.% of the total volume of AlN and W CaF 2 Ingredients, the original powder adopts agate pot and zirconia balls, with absolute ethanol as the grinding medium, according to the ball-to-material ratio of 4:1, it is mixed on a high-energy planetary ball mill for 24 hours, and the speed is 125 rpm. After the mixed powder slurry was dried and sieved, the mixed powder was filled into a mold, subjected to 3MPa×5min unidirectional axial pressing, and then subjected to 200MPa×15min cold isostatic pressing to obtain Mo(W)-AlN Composite green body; placing the composite green body in ZrO 2Under a nitrogen atmosphere in a crucible, carry out hot-press sintering at 1800°C for 30MPa×30min to obtain a composite block material, and then process it into required standard samples according to different requirements.

[0040] Use BRIGHT A100 digital metallographic microsc...

Embodiment 2

[0044] According to 85vol.% AlN (average particle size of 5 microns), 15vol.% W (average particle size of 20 microns), and 8vol.% of the total volume of AlN and W Y 2 o 3 Ingredients, the original powder adopts agate pot and zirconia balls, with absolute ethanol as the grinding medium, according to the ball-to-material ratio of 4:1, it is mixed on a high-energy planetary ball mill for 24 hours, and the speed is 125 rpm. After the mixed powder slurry was dried and sieved, the mixed powder was filled into a mold, subjected to 5MPa×1min unidirectional axial pressing, and then subjected to 200MPa×15min cold isostatic pressing to obtain Mo(W)-AlN Composite green body: place the composite green body in an AlN crucible for sintering under a nitrogen atmosphere at 1550°C at 30MPa×30min to obtain a composite block material, and then process it into the required standard sample.

Embodiment 3

[0046] According to 65vol.% AlN (average particle size of 0.1 micron), 35vol.% Mo (average particle size of 1 micron), and 5vol.% of the total volume of AlN and Mo CaF 2 Ingredients, the original powder adopts agate pot and zirconia balls, with absolute ethanol as the grinding medium, according to the ball-to-material ratio of 4:1, it is mixed on a high-energy planetary ball mill for 24 hours, and the speed is 125 rpm. After the mixed powder slurry was dried and sieved, the mixed powder was filled into a mold, subjected to 5MPa×2min unidirectional axial pressing, and then subjected to 200MPa×15min cold isostatic pressing to obtain Mo(W)-AlN Composite green body: the composite green body is placed in an AlN crucible for sintering under a nitrogen atmosphere at 1650°C for 3 hours under normal pressure to obtain a composite block material, and then processed into the required standard sample.

[0047] The anti-electron radiation shielding composite material prepared in Examples 2...

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Abstract

The invention relates to electron-irradiation resisting shielding material and a method for preparing the same. The electron-irradiation resisting shielding material comprises 15-35 percent by volume of Mo or W and 65-85 percent by volume of AlN, wherein the Mo or W is used as the high Z metallic phase, and the AlN is used as the Z dielectric phase. The insulating high-energy electron-irradiation resisting shielding material has higher shielding efficiency than the high atomic number metal such as tantalum, tungsten and lead, has high thermal conductivity, can reduce the dosage of the electron-irradiation deposition agent by over two orders of magnitude without destroying the original radiating condition of the components and can ensure that the temperature of the chip meet the normal work requirement when the components are working.

Description

technical field [0001] The invention relates to an anti-electron radiation shielding material and a preparation method, belonging to the field of shielding materials. Background technique [0002] Electronic devices working in a radiation environment, such as Si MOS devices, have a certain radiation energy deposition threshold. When the energy deposition caused by radiation exceeds this threshold, the performance of the device will deteriorate or fail. For example, the electronic devices used in artificial satellites inevitably encounter the radiation of various space charged particles, and the charged particles interact with electronic components to produce various space radiation effects. When the deposited dose exceeds the threshold of the device, the electronic device fails It will cause a certain degree of damage and harm to the satellite, and even threaten the safety of the satellite. For these radiation-sensitive devices, shielding the device with a shielding materia...

Claims

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Application Information

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IPC IPC(8): C22C29/16B32B15/01C22C1/05H05K9/00
Inventor 杨志民毛昌辉杜军杨剑董桂霞马书旺罗君
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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