Method for making nano-sized phase change memory
A phase-change memory and nanometer-sized technology, which is applied in the field of microelectronics, can solve problems such as high cost, and achieve the effects of convenient preparation, cost reduction, and simple device structure
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Embodiment 1
[0059] 1. Using semiconductor or insulating materials such as monocrystalline silicon wafers and SOI wafers as the substrate 101;
[0060] 2. Using a thin film preparation process, an electric thermal insulation layer silicon nitride 102 is prepared on the substrate;
[0061] 3. Depositing polysilicon on the electrical and thermal insulating layer silicon nitride by LPCVD as the sidewall substrate 103 for making the metal GAP, and then forming the sidewall substrate pattern by optical lithography and dry etching. as shown in picture 2.
[0062] 4. Deposit silicon dioxide 104 as a sacrificial sidewall material by PECVD, as shown in FIG. 3 ; then dry etching back to form a sacrificial sidewall. As shown in Figure 4.
[0063] 5. Rinse off the sidewall substrate with potassium hydroxide solution (potassium hydroxide solution has a relatively high etching selection for substrate silicon nitride and sidewall silicon dioxide), as shown in FIG. 5 .
[0064] 6. Form a tungsten metal...
Embodiment 2
[0069] The specific steps and conditions are the same as those in Example 1, except that silicon dioxide is used as the sidewall substrate of the metal NANOGAP, and polysilicon is used as the sacrificial sidewall.
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Abstract
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