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Organic thin film transistor and preparation method thereof

An organic thin film and transistor technology, applied in the field of organic thin film transistors and their preparation, can solve the problems of high operating voltage, low dielectric constant, low mobility, etc. Effect

Inactive Publication Date: 2010-07-21
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on the current preparation methods of organic thin film transistors, the gate dielectric of most organic thin film transistors is still made of organic thin film or silicon dioxide synthesized by solvent method, which has thicker thickness, more defects, and relatively low dielectric constant. Therefore, there are still The disadvantages of high operating voltage and low mobility

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  • Organic thin film transistor and preparation method thereof
  • Organic thin film transistor and preparation method thereof
  • Organic thin film transistor and preparation method thereof

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Embodiment Construction

[0020] An exemplary embodiment of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. Although these figures do not completely reflect the actual size of the device, they still fully reflect the mutual positions between the regions and the constituent structures, especially the upper-lower and adjacent relationships between the constituent structures.

[0021] The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the ...

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Abstract

The invention belongs to the technical field of microelectronics, and particularly discloses an organic thin film transistor and a preparation method thereof. The invention prepares a gate dielectric method through an atomic layer deposition inorganic high-k gate dielectric method; the method can prepare an inorganic gate dielectric layer below 10nm; the prepared organic thin film transistor can improve the working current of the transistor and reduce the working voltage, and simultaneously, the method of the invention has the advantages of keeping the low preparation temperature of the organic thin film transistor, being applicable to large-area processing, applicability to flexible substrates, low production cost and the like.

Description

technical field [0001] The invention relates to an organic thin film transistor and a preparation method thereof, in particular to a method for preparing an organic thin film transistor by atomic layer deposition of an inorganic high-permittivity gate dielectric, and belongs to the field of semiconductor devices. Background technique [0002] Thin-film transistor (TFT) is one of the types of field-effect transistors. The schematic cross-section of a traditional thin-film transistor is shown in figure 1 shown. Firstly, a transistor gate 102 made of aluminum, molybdenum, aluminum neodymium alloy or composite materials therebetween is formed on the substrate 101 . Next, a gate insulating layer 103 is formed on the gate 102 , and then an amorphous silicon layer 104 and an n-type or p-type doped polysilicon layer 105 are sequentially formed. Next, a metal layer of materials such as titanium, molybdenum or aluminum is formed, and then the metal layer is etched to form the source...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/10H01L51/40
Inventor 刘晗顾晶晶王鹏飞张卫
Owner FUDAN UNIV