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Method for preparing zinc oxide transparent electrode by adopting MVPE two-step method

A transparent electrode and zinc oxide technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as high operating voltage, high resistivity, and large series resistance, reduce operating voltage and series resistance, and improve interface properties Effect

Active Publication Date: 2012-11-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] Compared with ITO transparent electrodes, the application of zinc oxide transparent electrodes on GaN-LEDs still has the following problems, such as high resistivity, high working voltage, and large series resistance, etc.

Method used

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  • Method for preparing zinc oxide transparent electrode by adopting MVPE two-step method
  • Method for preparing zinc oxide transparent electrode by adopting MVPE two-step method
  • Method for preparing zinc oxide transparent electrode by adopting MVPE two-step method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0034] Example: Gallium-doped zinc oxide transparent electrode prepared by MVPE two-step method

[0035] Step 1: Load metal zinc Zn and metal gallium Ga into a metal boat, wherein the ratio of Ga to Zn is 5:1 (molar ratio).

[0036] Step 2: Take a GaN-LED sample with a 2-inch quantum well structure grown by MOCVD, and install it on the substrate support after cleaning.

[0037] Step 3: Pass carrier gas (N 2 ) to expel the air.

[0038] Step 4: Heat up the metal boat to 650°C, the carrier gas flow rate of the metal boat is 0.2L / m, the temperature of the oxygen source bubbling bottle is raised to 60°C, the carrier gas flow rate of the oxygen source bubbling bottle is 3L / m, the substrate temperature is 770°C, and the growth 1 minute.

[0039] Step 5: Raise the temperature of the metal boat to 700°C, increase the carrier gas flow rate of the metal boat to 0.4L / m, lower the substrate temperature to 740°C, and grow for 5 minutes.

[0040] Step 6: using a mask process to etch a s...

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Abstract

The invention discloses a method for preparing a zinc oxide transparent electrode by adopting an MVPE two-step method, comprising the following steps of: firstly, growing a buffer layer; and secondly, growing an electrode layer, wherein in the process of growing the buffer layer, the temperature of a the metal boat is lower than that of the metal boat in the process of growing the electrode layerby 30-200 DEG C, the carrier flow of the metal boat is one tenth to 1 time of that of the metal boat in the process of growing the electrode layer, and the temperature of a liner is higher than that of the liner in the process of growing the electrode layer by 0-150 DEG C. By utilizing the invention, the interface quality of the zinc oxide transparent electrode is efficiently improved, and the work voltage and the serial resistance of an LED are lowered.

Description

technical field [0001] The invention relates to the technical field of electronic and optoelectronic materials and device manufacturing, in particular to a method for preparing a zinc oxide transparent electrode with high interface quality by using a metal source chemical vapor deposition (MVPE) two-step method. Background technique [0002] Gallium nitride (GaN)-based light-emitting diode (LED) has high luminous efficiency, low power consumption, long service life, strong safety and reliability, all-solid-state luminescence is beneficial to environmental protection, and has no greenhouse gas emissions such as sulfur dioxide, nitride and carbon dioxide. And many other advantages, it has become a research hotspot for researchers around the world. In the LED manufacturing process, the quality of the transparent electrode is an important factor affecting the luminous efficiency of the LED chip. [0003] For electrical injection light-emitting devices such as light-emitting dio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/36H01L33/42
Inventor 王晓峰杨华刘祯曾一平王国宏
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI