Semiconductor device and method of manufacturing the same
A manufacturing method and semiconductor technology, which are applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, transistors, etc., can solve the problems of easy generation of hot carriers and increase in strength, so as to suppress the generation of hot carriers and achieve high electrical properties. , the effect of high reliability
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Embodiment approach 1
[0078] In this embodiment mode, the structure of a transistor which is one mode of a semiconductor device will be described.
[0079] Figures 1A to 1C A transistor having a bottom-gate structure of the present embodiment is shown. Figure 1A is a top view, Figure 1B is a cross-sectional view. Figure 1B is along Figure 1A Cross-sectional view cut off by the dotted line A1-A2 and B1-B2 in the figure. Figure 1C is to zoom in Figure 1B A cross-sectional view of a portion where the first electrode layer 114a of the transistor 141 extends from the first wiring layer 115a and a portion where the second electrode layer 114b extends from the second wiring layer 115b.
[0080] exist Figures 1A to 1C In the thin film transistor 141 shown, a gate electrode layer 111 is provided on a substrate 100, a gate insulating film 102 is provided on the gate electrode layer 111, and a source electrode layer and a drain electrode are provided on the gate insulating film 102. The ends of t...
Embodiment approach 2
[0120] Below, refer to Figure 2A to Figure 3C illustrate Figures 1A to 1C The manufacturing method of the thin film transistor 141. Specifically, a manufacturing process of a pixel portion of a display device having transistors will be described.
[0121] As the substrate 100, the same substrate as that described in Embodiment Mode 1 is used, and the gate electrode layer 111 described in Embodiment Mode 1 is formed on the entire surface of the substrate 100 by a sputtering method or a vacuum evaporation method. conductive film material. Next, a first photolithography process is performed to form a resist mask, and unnecessary portions are removed by etching to form gate wiring including the gate electrode layer 111 , capacitor wiring 123 , and first terminal 118 . At this time, it is preferable to form at least an end portion of the gate electrode layer 111 into a tapered shape by etching in order to prevent disconnection.
[0122] Next, a gate insulating film 102 is form...
Embodiment approach 3
[0181] In Embodiment 2, two masks are used in the third photolithography step of forming the first electrode layer and the second electrode layer and the fourth photolithography step of forming the first wiring layer and the second wiring layer. However, as exemplified in this embodiment mode, when a resist mask having regions of various (typically two) thicknesses formed using a multi-tone (high-level tone) mask is used, it is possible to reduce the used The number of resist masks can be reduced, and process simplification and cost reduction can be realized.
[0182] Figures 6A to 6C A transistor having a bottom-gate structure of the present embodiment is shown. Figure 6A is the floor plan, Figure 6B is a cross-sectional view. Figure 6B is along Figure 6A Cross-sectional view cut off by the dotted line A1-A2 and B1-B2 in the figure. Figure 6C is to zoom in Figure 6B A cross-sectional view of a portion where the first electrode layer 114a of the transistor 142 ext...
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