Method for increasing signal to noise ratio of femtosecond laser through F-P (Fabry-Perol) etalon internally installed with electro-optic crystal

A femtosecond laser and electro-optic crystal technology, applied in lasers, laser components, circuits, etc., can solve the problems of complex optical path adjustment and low conversion efficiency, and achieve improved signal-to-noise ratio, convenient device adjustment, and high transmission efficiency Effect

Inactive Publication Date: 2010-10-20
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the use of plasma mirror filtering has problems such as low conversion efficiency and complicated optical path adjustment.

Method used

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  • Method for increasing signal to noise ratio of femtosecond laser through F-P (Fabry-Perol) etalon internally installed with electro-optic crystal
  • Method for increasing signal to noise ratio of femtosecond laser through F-P (Fabry-Perol) etalon internally installed with electro-optic crystal
  • Method for increasing signal to noise ratio of femtosecond laser through F-P (Fabry-Perol) etalon internally installed with electro-optic crystal

Examples

Experimental program
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Effect test

Embodiment 1

[0052] according to figure 2 Each optical element is installed, the facing surfaces of the first plate 7-1 and the second plate 7-2 of the F-P etalon are coated with a silver film with a reflectivity of 0.96, and the electro-optic crystal 8 is made of diduterium phosphate Potassium (KD * P) production, the length is 3cm, the electro-optic coefficient is 23.6×10 -12 V / m, distance ratio KD between two flat plates of F-P etalon * The length of P is 6 μm, and both the optical pulse stretcher 6 and the optical pulse compressor 10 adopt a grating pair composed of two antiparallel diffraction gratings, and the groove density of the diffraction grating is 600 lines / mm.

[0053] The femtosecond laser light source 5 adopts a titanium sapphire ultrashort pulse laser light source with a center wavelength of 800 nm, an initial pulse width of 50 fs, and a bandwidth of 18.7 nm. The relationship between the pulse width before and after the stretching of the chirped pulse can be represente...

Embodiment 2

[0058] In this example, the electro-optic crystal used in Example 1 is replaced by ammonium dihydrogen phosphate (ADP), and other conditions are the same as in Example 1. When the initial signal-to-noise ratio is 10 8 When the chirped pulse is injected into the F-P etalon with built-in ADP, by adjusting the high-voltage pulse power supply 9, the KD * The voltage V(t) on P varies in a linear form with a slope of -6308V / ns within the voltage range of 0-13kV, so as to be consistent with the chirp size of the chirped signal pulse, and the signal-to-noise ratio of the chirped pulse after spectral filtering About 3×10 10 , SNR Initial SNR 10 8 The improvement is about 300 times, that is, the signal-to-noise ratio is increased by 2 orders of magnitude, and the transmission efficiency of the chirped signal light can also be as high as 95%.

Embodiment 3

[0060] In this example, the electro-optic crystal used in Example 1 is replaced by potassium dihydrogen phosphate (KDP). The pulse stretcher 6 and the pulse compressor 10 all adopt a prism pair composed of two antiparallel prisms, and other conditions are the same as those in the implementation. Example 1 is the same, when the initial signal-to-noise ratio is 10 8 When the chirped pulse is injected into the F-P etalon with built-in ADP, by adjusting the high-voltage pulse power supply 9, the KD * The voltage V(t) on P varies in a linear form with a slope of -5160V / ns within the voltage range of 0-10kV, so as to be consistent with the chirp size of the chirped signal pulse, and the signal-to-noise ratio of the chirped pulse after spectral filtering About 3×10 10 , SNR Initial SNR 10 8 The improvement is about 300 times, that is, the signal-to-noise ratio is increased by 2 orders of magnitude, and the transmission efficiency of the chirped signal light can also be as high as 9...

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Abstract

The invention relates to a method for increasing the signal to noise ratio of a femtosecond laser through an F-P (Fabry-Perol) etalon internally installed with an electro-optic crystal and a device thereof, which belong to the technical field of ultrashort pulses. The method comprises the following steps: firstly, stretching a femtosecond laser pulse to be increased in the signal to noise ratio, which is output from a femtosecond laser light source, into chirp signal light; enabling an instaneous spectral filtering function output by the F-P etalon to be consistent with the chirp size of the chirp signal light by modulating the voltages of both ends of the electro-optic crystal internally installed in the F-P etalon, and thereby, a chirp signal pulse efficiently pass, whereas noise is filtered off to achieve the goal of increasing the signal to noise ratio of the chirp pulse; finally, compressing the chirp signal light into the femtosecond laser with higher signal to noise ratio. The device for realizing the method comprises the femtosecond laser light source, a laser pulse stretcher, the F-P etalon, the electro-optic crystal, a high-voltage pulse power supply, a laser pulse compressor and the like. The signal to noise ratio of the femtosecond laser can be effectively increased by adopting the method and the device. Moreover, the device has simple structure and convenient adjustment.

Description

technical field [0001] The present invention relates to a method and device for improving the signal-to-noise ratio of femtosecond-level lasers, in particular to a method for improving the signal-to-noise ratio of femtosecond-level lasers through F-P (Fabry-Perot) etalons with built-in electro-optic crystals. The method for noise ratio and the device for realizing the method belong to the field of ultrashort pulse technology. Background technique [0002] In recent years, with the emergence of chirped pulse amplification (CPA) technology, high-power ultrashort pulse laser systems have made great progress. Using a neodymium glass laser device of the kJ level, the peak power of the output laser pulse can reach the PW level, and the focused light intensity can reach 10 21～22 W / cm 2 order of magnitude. When the laser interacts with the solid target, when the laser intensity reaches 10 13 W / cm 2 When , plasma can be generated even if the laser intensity is less than 10 13 W...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/107H01S3/00
Inventor 张彬孙年春李坤曾曙光
Owner SICHUAN UNIV
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