Chemico-mechanical polishing liquid and polishing method

Abstract

The invention discloses a chemico-mechanical polishing liquid, comprising a liquid. Composite abrasive particles are distributed in the liquid and are formed by attaching small particle diameter abrasive particles to the outside of big magnetic polymer particles, wherein the magnetic polymer particles are formed by polymer materials coating the magnetic materials. The invention also discloses a chemico-mechanical polishing method. By adopting the chemico-mechanical polishing liquid , the composite abrasive particles are kept on a soft polishing pad or the surface of a hard polisher by using an auxiliary magnetic field, and the polished surface of the polishing material is polished. When the chemico-mechanical polishing is carried out on materials, such as semiconductor substrates, oxides,metal, and the like, and a Cu / low-k medium during the processing of the semiconductor parts, the technical scheme can improve the polishing rate, control and reduce the collapsing edge of the polishing surface and improve the metal surface quality of a polishing workpiece.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and relates to the chemical mechanical polishing process applied to materials such as semiconductor materials (such as single crystal silicon wafers), oxides (such as glass) and metals (such as copper, tungsten, tantalum) and the manufacturing process of semiconductor components (such as shallow trench isolation, Cu / low-k dielectric planarization, etc.) chemical mechanical polishing processing technology, especially relates to a chemical mechanical polishing liquid, a polishing method using the polishing liquid and a preparation method of the polishing liquid. Background technique [0002] Chemical Mechanical Polishing (CMP for short), also known as Chemical Mechanical Planarization, is a combination of mechanical grinding and chemical etching. Corrosion, in the alternating process of chemical film formation and mechanical film removal, removes a very thin layer of material ...

AI Technical Summary

Problems solved by technology

[0017] As can be seen from the above, the polishing liquid used in the existing magnetic field-assisted polishing technology contains two kinds of particles: pure magnetic particles (carbonyl iron particles, etc.) and abrasive grains, and the magnetic particles and abrasive grains are independently dispersed in the polishing liquid. Due to the action of the gradient magnetic field and the layering of abrasive particles, the magnetic particles are difficult to control the material removal rate and surface quality.

In magnetic polishing, the iron powder and abrasive grains in the magnetic abrasive act on the surface of the workpiece together, which greatly affects the surface quality.

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