Chemico-mechanical polishing liquid and polishing method

A chemical mechanical and polishing liquid technology, which is applied in the direction of surface polishing machine tools, grinding/polishing equipment, polishing compositions containing abrasives, etc., can solve the problems of difficult control of material removal rate and surface quality, and influence of surface quality

Inactive Publication Date: 2010-10-27
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] As can be seen from the above, the polishing liquid used in the existing magnetic field-assisted polishing technology contains two kinds of particles: pure magnetic particles (carbonyl iron particles, etc.) and abrasive grains, and the magnetic particles and abrasive grains are independently dispersed in the polishing liquid. Due to th

Method used

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  • Chemico-mechanical polishing liquid and polishing method
  • Chemico-mechanical polishing liquid and polishing method
  • Chemico-mechanical polishing liquid and polishing method

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Embodiment Construction

[0079] A detailed description will be given below of specific embodiments of the present invention.

[0080] A chemical-mechanical polishing liquid, comprising a liquid in which composite abrasive grains are distributed, the composite abrasive grains are composed of large-grained magnetic polymer particles attached to the surface of small-diameter abrasives, and the magnetic polymer particles are magnetically wrapped by polymer materials. Material composition. The specific preparation of polishing fluid and comparison of polishing experiments are as follows:

[0081] 1. Preparation of magnetic particles and magnetic polymer particles

[0082] 1-1, Fe 3 o 4 Preparation of nanoparticles

[0083] 0.196 moles of FeCl 3 ·6H 2 O and 0.098 mol FeSO 4 ·6H 2O was placed in a 5000mL three-necked flask, and 2000mL of deionized water was added to dissolve, mechanically stirred, and high-purity argon gas was introduced to remove oxygen in the water. The argon atmosphere was heated ...

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Abstract

The invention discloses a chemico-mechanical polishing liquid, comprising a liquid. Composite abrasive particles are distributed in the liquid and are formed by attaching small particle diameter abrasive particles to the outside of big magnetic polymer particles, wherein the magnetic polymer particles are formed by polymer materials coating the magnetic materials. The invention also discloses a chemico-mechanical polishing method. By adopting the chemico-mechanical polishing liquid , the composite abrasive particles are kept on a soft polishing pad or the surface of a hard polisher by using an auxiliary magnetic field, and the polished surface of the polishing material is polished. When the chemico-mechanical polishing is carried out on materials, such as semiconductor substrates, oxides,metal, and the like, and a Cu/low-k medium during the processing of the semiconductor parts, the technical scheme can improve the polishing rate, control and reduce the collapsing edge of the polishing surface and improve the metal surface quality of a polishing workpiece.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and relates to the chemical mechanical polishing process applied to materials such as semiconductor materials (such as single crystal silicon wafers), oxides (such as glass) and metals (such as copper, tungsten, tantalum) and the manufacturing process of semiconductor components (such as shallow trench isolation, Cu / low-k dielectric planarization, etc.) chemical mechanical polishing processing technology, especially relates to a chemical mechanical polishing liquid, a polishing method using the polishing liquid and a preparation method of the polishing liquid. Background technique [0002] Chemical Mechanical Polishing (CMP for short), also known as Chemical Mechanical Planarization, is a combination of mechanical grinding and chemical etching. Corrosion, in the alternating process of chemical film formation and mechanical film removal, removes a very thin layer of material ...

Claims

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Application Information

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IPC IPC(8): C09G1/02B24B29/00
Inventor 许雪峰彭伟姚春燕胡建德
Owner ZHEJIANG UNIV OF TECH
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