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Reverse-conducting SOI LIGBT component unit

A technology of reverse conduction type and device, applied in the field of reverse conduction type SOILIGBT device unit, can solve the problems of no reverse conduction function, device damage and failure, increase system volume, etc., to save resources, reduce energy consumption, and improve operating frequency Effect

Inactive Publication Date: 2011-11-16
SERVICE CENT OF COMMLIZATION OF RES FINDINGS HAIAN COUNTY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The SOI LIGBT device does not have an integrated reverse freewheeling device structure, and does not have a reverse conduction function. During high-frequency use with inductive loads, due to the lack of magnetic field energy, the electric energy discharge circuit is likely to induce high voltage, resulting in device damage and failure.
At present, commercial SOI LIGBT devices use external freewheeling diodes to solve this problem in practical applications, which increases system volume, weight, cost and reduces system speed, reliability and service life

Method used

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  • Reverse-conducting SOI LIGBT component unit
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  • Reverse-conducting SOI LIGBT component unit

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Embodiment Construction

[0018] figure 1 , figure 2 and image 3 (the part between two dotted lines) is a structural schematic diagram of a reverse conduction type SOI LIGBT device unit, wherein figure 2 It is a schematic cross-sectional view of (A-A) SOI LIGBT, image 3 It is a cross-sectional schematic diagram of a (B-B) freewheeling diode. The structure of the reverse conduction type SOI LIGBT device unit will be described in detail below by taking the N channel as an example.

[0019] The reverse conduction type SOI LIGBT device unit includes a semiconductor substrate 1, a buried oxide layer 2, an N-type buffer zone 3, an N - Drift region 4, P well 8, P well contact region 6, source region 7, gate oxide layer 9, main device anode region 14, main device anode contact region 13, main device anode short-circuit point region 15, field oxide layer 12, polysilicon Gate and gate field plate region 11 , sidewall isolation oxide layer 10 , edge trench isolation oxide layer 16 , internal trench isola...

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Abstract

The invention relates to a reverse-conducting SOI LIGBT component unit. The conventional SOI LIGBT does not have the reversing conducting function because that integrated reversing follow current device is not arranged. The invention comprises a semiconductor substrate, a buried oxide layer, a buffer area, a drift region, a well region, a well contact area, a source area and a gate oxide layer, wherein the buried oxide layer separates the semiconductor substrate from a top device layer completely; the top device layer is divided into the buffer area and the drift region; an inner groove separating oxide layer separates the top device layer into a main device part and a fly-wheel diode part; the main device part is provided with a main device anode contact area and a main device anode short circuit point area; and the fly-wheel diode part is provided with a fly-wheel diode cathode conduction area. The invention integrates the reserve follow current diode in the SOI LIGBT component unit structure, has reserve-conducting capability without connecting with any components, and facilitates the resource saving and energy consumption reduction.

Description

technical field [0001] The invention belongs to the technical field of power integrated circuits, and relates to a reverse conduction type SOI (semiconductor on insulating layer) LIGBT (lateral insulated gate bipolar transistor) device unit integrating freewheeling diodes. Background technique [0002] Due to its small size, weight, high operating temperature and strong radiation resistance, low cost and high reliability, SOI LIGBT devices are used as non-contact power electronic switches or power drivers in smart power It is widely used in electronics, high temperature environment power electronics, space power electronics and vehicle power electronics. A conventional SOI LIGBT (take SOI NLIGBT as an example) contains N in the SOI top semiconductor with a buried oxide layer between the substrate and the top semiconductor. - A field oxide layer is formed on the drift region; a short-channel NMOSFET, polysilicon gate and field plate are formed by double ion implantation poly...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12
Inventor 张海鹏苏步春张亮张帆牛小燕林弥
Owner SERVICE CENT OF COMMLIZATION OF RES FINDINGS HAIAN COUNTY