Hollow cathode sputtering ion plating device

A cathode sputtering and ion plating technology, applied in the direction of sputtering plating, ion implantation plating, vacuum evaporation plating, etc., can solve problems such as difficulties, inability to meet thick coating requirements, low deposition rate, etc., and achieve uniform distribution , Improve the effect of ion plating, improve the effect of coating uniformity

Inactive Publication Date: 2010-11-03
WUHAN UNIV
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AI-Extracted Technical Summary

Problems solved by technology

It is still quite difficult to further improve the utilization rate of the target
[0005] In addition, among the existing electroplating products, many products require the coating to be 80-100 microns. In order to meet the replacement requi...
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Method used

Fig. 1 is self-made hollow cathode sputtering ion plating system, and equipment size is Φ500 * 500mm. The pumping unit pumps air into the vacuum chamber through the pumping port. It can be seen from the figure that the inner wall of the entire vacuum chamber is the target material, and the outer surface of the vacuum chamber is a rotatable magnet. When working, the plasma is tightly bound in the vacuum chamber, and the workpiece is completely immersed in the plasma. In the middle of the vacuum chamber is a cylindrical rotatable arc target, which can provide highly ionized plasma. Due to the high-speed rotation of the magnet, no etched grooves will be formed on the target surface, and the utilization rate of the target can be increased to more than 80%. This system makes full use of the closed field and the arc-enhanced ionization effect, and the coating deposition rate is greatly improved, which can meet the industrialized mass production.
In conventional coating equipment, although the quantity of target is more, each target is separation magnetic field, can't close the magnetic field of whole equipment, causes the restraint to plasma is poor, and diffusion is more serious, and density is lower, causes coating Density and hardness are poor. In order to improve the magnetic field distribution, unbalanced magnetic field, external closed magnetic field, target alignment, and auxiliary ion source are the most commonly used methods, but the structure of the coating equipment is complicated and the price is relatively expensive. In addition, since the target is only arranged in a local area of ​​the vacuum chamber, there are many areas that cannot be coated when the workpiece rotates in the vacuum chamber, resulting in a significant drop in the deposition rate of the coating, generally 2-3 μm/h, which cannot meet the requirements of 30-50 μm Thickness coating requirements. For this reason, the present invention designs the inner wall of the vacuum chamber as an integral target, and the workpiece can be coated uninterruptedly when it rotates inside, which greatly improves the efficiency of the coating (the deposition rate is increased to more than 20 μm/h). In addition, the use of a closed magnetic field outside the target can not only improve the utilization efficiency of the target, but also greatly increase the plasma density in the vacuum chamber, which greatly simplifies the equipment and is very suitable for industrialized mass production. In the present invention, the space between the arc target and the hollow cathode magnetron target is an annular ion plating deposition area. Since the arc target generates high-intensity plasma, the closed magnetic field outside the hollow cathode magnetron target tightly confines the plasma to the arc target. Between and the magnetron target, the plasma density in the deposition area is greatly increased. In addition, when coating a variety of complex workpieces, the workpiece is completely immersed in the plasma, the effect of ion bombardment is very significant, and the hardness, adhesion and uniformity of the coating are well guaranteed.
The present invention is different from the general coating equipment at home and abroad at present, has fully utilized closed field magnetic field and rotating magnetic field technology, columnar high-power rotating arc target technology, not only can prepare various single thick coatings such as TiN, CrN, ...
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Abstract

The invention relates to a hollow cathode magnetron sputtering ion plating coating device, which comprises a vacuum chamber, wherein the vacuum chamber is provided with a vacuuming opening; cathode arc targets and a work piece frame are arranged in the vacuum chamber; the vacuum chamber is hollow cylindrical and is insulated from the ground; a target material is arranged on the inner wall of the vacuum chamber and is connected with the cathode of a sputtering power supply to form a hollow cathode sputtering target; a columnar arc target is arranged in the center of the vacuum chamber; and the work piece frame is positioned in an area enclosed by the cylindrical hollow cathode arc target and the columnar arc target. Due to the adoption of the structure, the hollow cathode magnetron target on the furnace wall and the high-power rotating arc target in the center are stably run when at work, and plasmas are uniformly distributed, which improves coating efficiency and ion plating effect, reduces coating cost, improves the uniformity of a coating and makes a coating process easier to control.

Application Domain

Vacuum evaporation coatingSputtering coating +1

Technology Topic

Electric arcMaterials science +5

Image

  • Hollow cathode sputtering ion plating device
  • Hollow cathode sputtering ion plating device
  • Hollow cathode sputtering ion plating device

Examples

  • Experimental program(3)

Example Embodiment

[0026] Example 1: Under the condition of 0.02Pa and negative 150V bias voltage, a pure Cr metal transition layer was prepared using a magnetic field-controlled metal Cr arc target; then nitrogen gas was introduced, the pressure was maintained at 0.5Pa, and the magnetron chromium target on the furnace wall was opened. Nitrogen reacts with Cr sputtered from the target surface to generate CrN. The flow of nitrogen gas is 50-200 sccm, and the flow of argon gas is 70-80 sccm; the current of the magnetron metal target on the furnace wall is 150-180A. The current of the center rotating target is 80-100A.
[0027] The above-mentioned glow discharge cleaning is carried out at 350-400°C in an argon atmosphere; after the glow cleaning, the metal Cr target cathodic arc discharge is carried out under the condition of 0.02Pa, and the deposition thickness of the metal transition layer is 100-200 nanometers; CrN coating The layer thickness is 20-30 microns. The preparation temperature is 400-450°C, and the bias voltage is negative 150V.

Example Embodiment

[0028] Example 2: Under the condition of 0.02Pa and negative 200V bias voltage, a pure Ti metal transition layer was prepared by using a metal Ti arc target controlled by a magnetic field; then nitrogen gas was introduced, the pressure was maintained at 0.8Pa, and the magnetron Ti target on the furnace wall was opened, Nitrogen gas reacts with Ti sputtered from the target surface to generate TiN. The flow rate of nitrogen gas is 100-120 sccm, and the flow rate of argon gas is 80-90 sccm; the current of the magnetron metal target on the furnace wall is 130-150A. The current of the center rotating target is 60-80A.
[0029] The above-mentioned glow discharge cleaning is carried out at 330-350°C in an argon atmosphere; after the glow cleaning, the metal Ti target cathodic arc discharge is carried out under the condition of 0.02Pa, and the deposition thickness of the metal transition layer is 200-300 nanometers; TiN coating The layer thickness is 30-40 microns. The preparation temperature is 400-450°C, and the bias voltage is negative 200V.

Example Embodiment

[0030] Example 3: Preparation of pure Zr metal transition layer using a metal Zr arc target controlled by a magnetic field under the conditions of 0.05 Pa and a negative 300V bias; then nitrogen gas was introduced, the pressure was maintained at 0.6 Pa, and the magnetron Zr target on the furnace wall was opened, The nitrogen gas reacts with the Zr sputtered from the target surface to generate ZrN. The flow of nitrogen gas is 100-120sccm, the flow of argon gas is 100-140sccm; the current of the magnetron metal target on the furnace wall is 160-180A. The current of the center rotating target is 100-120A.
[0031] The above-mentioned glow discharge cleaning is carried out at 380-420°C in an argon atmosphere; after the glow cleaning, the metal Zr target cathodic arc discharge is carried out under the condition of 0.02Pa, and the deposition thickness of the metal transition layer is 200-300 nanometers; ZrN coating The layer thickness is 40-50 microns. The preparation temperature is 400-450°C, and the bias voltage is negative 300V.
[0032] figure 1 It is a self-made hollow cathode sputtering ion plating system, the equipment size is Φ500×500mm. The air extraction unit exhausts the vacuum chamber through the air extraction port. It can be seen from the figure that the entire vacuum chamber wall is a target, and the outside of the vacuum chamber is a rotatable magnet. When working, the plasma is tightly bound in the vacuum chamber and the workpiece is completely immersed in the plasma. In the middle of the vacuum chamber is a cylindrical rotatable arc target, which can provide highly ionized plasma. Due to the high-speed rotation of the magnet, no etched grooves are formed on the target surface, and the utilization rate of the target material can be increased to more than 80%. This system makes full use of the closed field and electric arc to enhance the ionization effect, and the coating deposition rate is greatly increased, which can meet the large-scale industrial production.
[0033] figure 2 It is a schematic diagram of the closed field in the device. It can be seen from the figure that the magnets have opposite polarities to form a closed field, which greatly increases the plasma density in the device.
[0034] image 3 In order to adopt the surface morphology of the CrN thick coating prepared by this device, it can be seen from the surface that the coating surface is very smooth without obvious cavities and particles.
[0035] Figure 4 It is the cross-sectional topography of the coating. It can be seen that the coating has a dense structure without obvious columnar crystals.

PUM

PropertyMeasurementUnit
Deposition thickness100.0 ~ 200.0nm
Deposition thickness200.0 ~ 300.0nm
Deposition thickness5.0 ~ 300.0nm

Description & Claims & Application Information

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