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Hollow cathode sputtering ion plating device

A cathode sputtering and ion plating technology, applied in the direction of sputtering plating, ion implantation plating, vacuum evaporation plating, etc., can solve problems such as difficulties, inability to meet thick coating requirements, low deposition rate, etc., and achieve uniform distribution , Improve the effect of ion plating, improve the effect of coating uniformity

Inactive Publication Date: 2010-11-03
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is still quite difficult to further improve the utilization rate of the target
[0005] In addition, among the existing electroplating products, many products require the coating to be 80-100 microns. In order to meet the replacement requirements, the growth rate of the PVD coating must be above 10 microns / hour. The existing conventional magnetron sputtering coating Due to the low deposition rate, the equipment is basically unable to meet the requirements of thick coatings

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026]Embodiment 1: Under the condition of 0.02Pa and negative 150V bias, a metal Cr arc target controlled by a magnetic field is used to prepare a pure Cr metal transition layer; then nitrogen gas is introduced, and the air pressure is maintained at 0.5Pa, and the magnetron chromium target on the furnace wall is opened. CrN is generated by the reaction of nitrogen gas and Cr sputtered from the target surface. The nitrogen gas flow rate is 50-200 sccm, the argon gas flow rate is 70-80 sccm; the current of the magnetron metal target on the furnace wall is 150-180A. The center rotating target current is 80-100A.

[0027] The above-mentioned glow discharge cleaning is carried out at 350-400°C in an argon environment; after the glow cleaning is completed, the cathode arc discharge of the metal Cr target is carried out under the condition of 0.02Pa, and the deposition thickness of the metal transition layer is 100-200 nanometers; the CrN coating The layer thickness is 20-30 micron...

Embodiment 2

[0028] Embodiment 2: under the condition of 0.02Pa, negative 200V bias, utilize the metal Ti electric arc target of magnetic field control to prepare pure Ti metal transition layer; Pass into nitrogen then, air pressure keeps 0.8Pa, open the magnetron Ti target on the furnace wall, Nitrogen gas is used to react with Ti sputtered from the target surface to form TiN. The nitrogen gas flow rate is 100-120 sccm, the argon gas flow rate is 80-90 sccm; the current of the magnetron metal target on the furnace wall is 130-150A. The center rotating target current is 60-80A.

[0029] The above-mentioned glow discharge cleaning is carried out at 330-350°C in an argon environment; after the glow cleaning is completed, the cathode arc discharge of the metal Ti target is carried out under the condition of 0.02Pa, and the deposition thickness of the metal transition layer is 200-300 nanometers; the TiN coating The layer thickness is 30-40 microns. The preparation temperature is 400-450°C, ...

Embodiment 3

[0030] Embodiment 3: under the condition of 0.05Pa, negative 300V bias, utilize the metal Zr arc target of magnetic field control to prepare pure Zr metal transition layer; Pass into nitrogen then, air pressure keeps 0.6Pa, open the magnetron Zr target on the furnace wall, ZrN is generated by the reaction of nitrogen gas and Zr sputtered from the target surface. The flow rate of nitrogen gas is 100-120 sccm, the flow rate of argon gas is 100-140 sccm; the current of the magnetron metal target on the furnace wall is 160-180A. The center rotating target current is 100-120A.

[0031] The above-mentioned glow discharge cleaning is carried out at 380-420°C in an argon environment; after the glow cleaning is completed, the metal Zr target cathode arc discharge is carried out under the condition of 0.02Pa, and the deposition thickness of the metal transition layer is 200-300 nanometers; ZrN coating The layer thickness is 40-50 microns. The preparation temperature is 400-450°C, and ...

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Abstract

The invention relates to a hollow cathode magnetron sputtering ion plating coating device, which comprises a vacuum chamber, wherein the vacuum chamber is provided with a vacuuming opening; cathode arc targets and a work piece frame are arranged in the vacuum chamber; the vacuum chamber is hollow cylindrical and is insulated from the ground; a target material is arranged on the inner wall of the vacuum chamber and is connected with the cathode of a sputtering power supply to form a hollow cathode sputtering target; a columnar arc target is arranged in the center of the vacuum chamber; and the work piece frame is positioned in an area enclosed by the cylindrical hollow cathode arc target and the columnar arc target. Due to the adoption of the structure, the hollow cathode magnetron target on the furnace wall and the high-power rotating arc target in the center are stably run when at work, and plasmas are uniformly distributed, which improves coating efficiency and ion plating effect, reduces coating cost, improves the uniformity of a coating and makes a coating process easier to control.

Description

technical field [0001] The invention relates to a hollow cathode sputtering ion plating device, which belongs to the technical field of thin films. Background technique [0002] Surface coating technology is widely used in aerospace, machinery, electronics, chemical industry, hardware and other industries. Through surface coating treatment, the surface corrosion resistance and wear resistance of parts can be improved. In addition, the surface color can be changed to improve the surface decoration effect of the workpiece. It has been widely used in various daily necessities. At present, most conventional surface coatings use cheap electroplating, because a large amount of toxic substances will be produced during the coating process, such as the wastewater discharged from the electrochrome plating process contains a variety of heavy metals, especially carcinogenic hexavalent chromium, which seriously pollutes the surrounding environment. With the increasing emphasis on enviro...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/35
Inventor 杨兵丁辉
Owner WUHAN UNIV
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