Silicon wafer cleaning agent and use method thereof

A silicon wafer cleaning agent and a technology for silicon wafers, applied in the field of cleaning agents, can solve the problems of white spots, inability to prevent air or water from contacting silicon, black spots on silicon wafers, etc., and achieve the effects of environmental harmlessness, low cost and simple operation.

Inactive Publication Date: 2010-11-10
GD SOLAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the silicon wafer is exposed to air or water, it will generally react, and the reaction equations are: Si+O 2 = SiO 2 , Si+2H 2 O = SiO 2 +2H 2 ↑, the silicon dioxide produced by these reactions is usually a loose and porous structure, so it cannot prevent air or water from contacting silicon. When the silicon wafer is cleaned, the silicon wafer is present in an alkaline cleaning agent, and the alkali solution will penetrate through the oxide layer to The surface of the silicon wafer reacts with silicon, and the uncontrollable reaction between alkali and silicon will cause problems such as black spots and white spots on the surface of the silicon wafer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] The present embodiment comprises ozone, triethanolamine, fatty alcohol polyoxyethylene ether and water, and the volume ratio of each component is ozone: triethanolamine: fatty alcohol polyoxyethylene ether: water=0.05: 4: 0.5: 30;

[0015] A method for using a silicon wafer cleaning agent, comprising the following steps:

[0016] (1) Immerse the silicon wafer in the above-mentioned silicon wafer cleaning agent for 200-500 seconds, and a silicon dioxide layer grows on the surface of the silicon wafer;

[0017] (2) Ultrasonic vibration of the cleaning agent for 300s, the temperature is 60°C, and the frequency is 40KHz.

Embodiment 2

[0019] This embodiment comprises hydrogen peroxide, sodium alkoxide, maleic acid 2-2-octyl sulfonate sodium and water, and the volume ratio of each component is hydrogen peroxide: sodium alkoxide: maleic acid 2-2-octyl sulfonate sodium: water =0.1:3:0.7:45;

[0020] A method for using a silicon wafer cleaning agent, comprising the following steps:

[0021] (1) immerse the silicon wafer in the above-mentioned silicon wafer cleaning agent for 300s, and a silicon dioxide layer grows on the surface of the silicon wafer;

[0022] (2) Ultrasonic vibration of the cleaning agent for 200s, the temperature is 50°C, and the frequency is 40KHz.

Embodiment 3

[0024] Present embodiment comprises ozone, amide lithium, fatty alcohol polyoxyethylene ether and water, and the volume ratio of each component is ozone: amide lithium: fatty alcohol polyoxyethylene ether: water=0.08: 4: 0.6: 50;

[0025] A kind of using method of silicon wafer cleaning agent comprises the following steps:

[0026] (1) immerse the silicon wafer in the above-mentioned silicon wafer cleaning agent for 250s, and a silicon dioxide layer grows on the surface of the silicon wafer;

[0027] (2) Ultrasonic vibration of the cleaning agent for 300s, the temperature is 60°C, and the frequency is 40KHz.

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PUM

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Abstract

The invention discloses a silicon wafer cleaning agent and a use method thereof. The silicon wafer cleaning agent consists of oxidant, organic base, penetrant and water, and the volume ratio of the components is as follows: oxidant : organic base : penetrant : water equal to 0.02-0.1:1-4:0.5-1:30-50; the standard electrode potential of the oxidant is not less than 1.7V, and the oxidant is ozone or hydrogen peroxide; the organic base is selected from one or more of the following components: triethanolamine, sodium alkoxide, sodium alkyl, lithium alkyl, lithium amide and quaternary ammonium base; and the penetrant is fatty alcohol-polyoxyethylene ether or sodium diethylhexyl sulfosuccinate. The cleaning agent can be simply operated, silicon wafer cleaning does not become complex, the cost is low, no pollution is generated, and the cleaning agent cannot bring impurities to stain silicon wafers, and is environment-friendly.

Description

technical field [0001] The invention relates to a cleaning agent in the process of making silicon wafers, in particular to a cleaning agent for silicon wafers and a method for using the same. Background technique [0002] Pollutants on the surface of solar silicon wafers mainly include organic matter, particle pollution and metal ion contamination, etc., which usually exist on the surface of silicon wafers or in the self-oxidized film of silicon wafers in the form of physical adsorption and chemical methods. The silicon dioxide layer on the surface of silicon wafers usually There are two types of loose structure and dense structure. Generally, the natural oxide layer is mostly loose structure, and a dense oxide layer can be obtained by using a strong oxidant or high temperature. When the silicon wafer is exposed to air or water, it will generally react, and the reaction equations are: Si+O 2 = SiO 2 , Si+2H 2 O = SiO 2 +2H 2 ↑, the silicon dioxide produced by these reac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/32C11D7/34C11D7/26C11D7/04C11D7/60H01L21/306
Inventor 杨福山叶淳超夏恒军
Owner GD SOLAR
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