Red organic electroluminescent phosphorescent material containing aryl united quinazoline metal iridium complexes and organic electroluminescent device thereof
A technology of aryl biquinazolines and phosphorescent materials, which is applied in luminescent materials, electric solid devices, compounds containing elements of group 8/9/10/18 of the periodic table, etc., to achieve high efficiency, luster purity, and excellent materials Effect
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Synthetic example 1
[0036] Synthesis Example 1: Synthesis of Compound 1
[0037] Compound 1 was synthesized according to the following reaction formula.
[0038]
[0039] Synthesis of Intermediate 1a
[0040] 2-Chloroquinazoline (13.75g, 83.54mmol), phenylboronic acid (11.20g, 91.85mmol), 0.6g tetrakis(triphenylphosphonium)palladium, 23g potassium carbonate, 13.5g tetrabutylammonium bromide, 150ml toluene , ethanol 100ml, water 50ml, stirred and refluxed under nitrogen atmosphere for 6h. Cool to room temperature, separate liquid, wash the organic phase with water until neutral, dry over anhydrous magnesium sulfate, filter, and concentrate under reduced pressure to obtain yellow-brown compound 1a (16 g).
[0041] Synthesis of Intermediate 1b
[0042] Compound 1a (39g, 189.10mmol), iridium trichloride hydrate (26.7g, 75.72mmol), water 133ml, ethylene glycol methyl ether 400ml, stirred and refluxed for 30h under nitrogen atmosphere. The reaction solution was cooled to room temperature, filter...
Embodiment 1
[0060] The embodiment of the present invention selects Zn (BTZ) 2 As the matrix of the light-emitting layer, compound 4 in Synthesis Example 4 was used as the dopant, prepared by thermal evaporation process, and a high-performance electroluminescent device was prepared. The substrate 1 is made of glass or transparent plastic, and the transparent conductive film 2 is a 20Ω / sq ITO (indium tin oxide) film as the anode. 2 Plasma (plasma bombardment) treatment under the atmosphere for 10 minutes, and then in high vacuum (3 ~ 2 × 10 -4 pa), deposit a hole injection layer 3 with a thickness of 45nm on the transparent conductive film 2, and select 2T-NATA; then deposit a hole transport layer 4 on the hole injection layer 3, select NPB, and have a thickness of 25nm; The light-emitting layer 5 is deposited on the hole transport layer, and the light-emitting layer 5 is simultaneously evaporated by co-deposition of Zn (BTZ) 2 And the compound 4 in synthetic embodiment example 4, its mas...
Embodiment 2
[0066] The present invention selects 10% doping concentration doping, synthesizes compound 1 in Example 1 as a dopant, selects CBP and Zn(BTZ) respectively 2 As the matrix material of the light-emitting layer, a high-performance electrophosphorescent device is prepared by thermal evaporation. The substrate 1 is made of glass or transparent plastic, and the transparent conductive film 2 is a 20Ω / sq ITO (indium tin oxide) film as the anode. 2 Plasma (plasma bombardment) treatment under the atmosphere for 10 minutes, and then in high vacuum (3 ~ 2 × 10 -4 pa), depositing a hole injection layer 3 with a thickness of 45 nm on the transparent conductive film 2; then depositing a hole transport layer 4 on the hole injection layer 3 with a thickness of 25 nm; then depositing a luminescent layer on the hole transport layer 5. The light-emitting layer 5 is evaporated at the same time by co-deposition method, where A is CBP or Zn(BTZ) 2 , and compound 1 in Synthetic Example 1, its mass...
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