Gallium nitride schottky rectifier with metal substrate and production method thereof

A metal substrate, gallium nitride technology, applied in the field of gallium nitride Schottky rectifier and its preparation, can solve the problems of device temperature burnout, poor thermal conductivity, affecting device stability, etc., to solve heat dissipation problems, improve performance and The effect of reliability

Active Publication Date: 2010-12-08
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The problem to be solved by the present invention is: the existing GaN Schottky rectifiers mostly use sapphire substrates, but the thermal conductivity of sapphire substrates is very poor, which easily leads to excessive tem...

Method used

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  • Gallium nitride schottky rectifier with metal substrate and production method thereof
  • Gallium nitride schottky rectifier with metal substrate and production method thereof
  • Gallium nitride schottky rectifier with metal substrate and production method thereof

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preparation example Construction

[0032] The preparation method of the gallium nitride schottky rectifier on the metal substrate comprises the following steps:

[0033] 1) The epitaxial layer of the GaN Schottky rectifier wafer is grown on the sapphire substrate 101. The epitaxial structure includes a buffer layer 102a, a heavily doped GaN ohmic contact layer 102b and a lightly doped GaN ohmic contact layer 102b on the substrate from bottom to top GaN voltage blocking layer 102c;

[0034] 2) Fabricate a GaN Schottky rectifier wafer with a lateral structure using a semiconductor micromachining method, including: using a mesa etching method to expose the heavily doped GaN ohmic contact layer 102b at the position where the ohmic electrode 104 is set; An ohmic electrode 104 is prepared on the gallium nitride ohmic contact layer 102b, a gallium nitride Schottky electrode 103 is prepared on the lightly doped gallium nitride voltage barrier layer 102c, and the prepared gallium nitride Schottky electrode 103 and the o...

Embodiment 1

[0049] Referring to accompanying drawings 2(a)-(e), a flip-chip lateral GaN Schottky rectifier structure supported by a metal substrate and its preparation method, the steps are as follows:

[0050] Step 1: As shown in FIG. 2(a), grow the epitaxial layer of the GaN Schottky rectifier wafer on the sapphire substrate 101. The epitaxial layer includes at least from bottom to top: buffer layer 102a, heavily doped GaN ohmic The contact layer 102b and the lightly doped gallium nitride voltage blocking layer 102c; wherein the thickness of the gallium nitride voltage blocking layer 102c is at least 1um, and the average doping concentration is less than 5×10 17 cm -3 ;

[0051]The second step: as shown in Figure 2(b), the lateral structure Schottky rectifier wafer is manufactured by semiconductor micromachining technology. The main process includes: firstly, the mesa is formed by plasma dry etching method, and the The part of the contact electrode exposes the heavily doped gallium ni...

Embodiment 2

[0057] Referring to accompanying drawings 3(a)-(f), a lateral structure GaN Schottky rectifier device supported by a metal substrate and its preparation method, the steps are as follows:

[0058] Step 1: As shown in FIG. 3(a), grow a GaN Schottky rectifier epitaxial layer on a sapphire substrate 101. The epitaxial layer at least includes: a buffer layer 102a, a heavily doped gallium nitride ohmic contact layer from bottom to top 102b and the lightly doped gallium nitride voltage blocking layer 102c; wherein the thickness of the medium gallium nitride voltage blocking layer 102c needs to be at least 1um, and the average doping concentration is less than 5×10 17 cm -3 ;

[0059] The second step: as shown in Figure 3(b), the lateral structure Schottky rectifier wafer is manufactured using semiconductor micromachining technology. The main process includes: firstly, the mesa is formed by plasma dry etching method, and the epitaxial structure is exposed. Moderately heavily doped G...

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Abstract

The invention relates to a gallium nitride schottky rectifier with a metal substrate and a production method thereof. The rectifier comprises a metal substrate, a metallic bonding layer and a gallium nitride schottky rectifier chip, wherein the metal substrate is used as a support substrate, the gallium nitride schottky rectifier chip comprises a gallium nitride epitaxial layer, a gallium nitride schottky electrode and an ohmic electrode, the gallium nitride epitaxial layer is bonded with the metal substrate through the metallic bonding layer, and the gallium nitride schottky electrode and the ohmic electrode are transversely arranged on the other side of the epitaxial layer relative to the metal substrate. When the gallium nitride schottky rectifier is produced, the ohimic electrode and a schottky contact electrode are produced on a front face of an epitaxial wafer successively, then a sapphire substrate on the other side of the epitaxial wafer is stripped off through lasers, and the metal substrate is bonded on the epitaxial wafer. The gallium nitride schottky rectifier can overcome the compatibility of the metallization process of the GaN schottky rectifier and the stripping process of the sapphire substrate, can solve the heat dissipation of devices by using the metal substrate with high heat conductivity as a support carrier and a heat sink and can effectively improve the performance and reliability of the devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor electronic devices, and relates to a power rectifying device based on a wide bandgap compound semiconductor material, in particular to a metal-substrate gallium nitride Schottky rectifier and a preparation method thereof. Background technique [0002] Power electronic devices, such as power rectifiers and power switches, are widely used in various fields of the national economy, such as switching power supplies, automotive electronics, radio communications, motor control, etc. For a long time, people have been using silicon-based power electronic devices; however, with the development of silicon technology for many years, the performance of silicon-based power electronic devices has gradually approached its theoretical limit due to the limitation of the physical characteristics of the silicon material itself. In order to further improve device performance and break through the "silicon limit...

Claims

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Application Information

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IPC IPC(8): H01L23/14H01L23/373H01L21/50
CPCH01L24/16H01L2224/16H01L2924/12032H01L2924/12041H01L2924/00H01L2924/00012
Inventor 陆海石宏彪张荣郑有炓张之野朱廷刚
Owner NANJING UNIV
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