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Method for preparing nitrogen oxide phosphor powder

A technology of nitrogen oxides and phosphors, which is applied in the field of phosphor powder preparation, can solve the problems of increasing the difficulty of preparation, and achieve the effects of increasing the difficulty of preparation, high product purity, and ensuring uniform mixing

Inactive Publication Date: 2010-12-15
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, regarding the preparation of multi-system nitrogen oxide phosphors by this method (please refer to the Chinese patent application with application number 200910056464.3), the nitriding atmosphere used is mainly a mixture of ammonia gas and hydrocarbon gas, which increases the difficulty of preparation

Method used

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  • Method for preparing nitrogen oxide phosphor powder
  • Method for preparing nitrogen oxide phosphor powder
  • Method for preparing nitrogen oxide phosphor powder

Examples

Experimental program
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Embodiment 1

[0028] In this embodiment, the nitrogen oxide phosphor to be prepared is (Y 5.9 Ce 0.1 )Si 3 O 9 N 4 , Where the metal composition is Y and Ce, and the nitride is Si 3 N 4 . According to (Y 5.9 Ce 0.1 )Si 3 O 9 N 4 Weigh the nitrate Y (NO 3 ) 3 ·6H 2 O(AR) 22.5976g, Ce nitrate Ce(NO 3 ) 3 ·6H 2 O (99.99%) 0.4342 g and nitride Si 3 N 4 (AR) 1.4028 grams, dissolved in distilled water, mixed well to make 100ml milky white suspension A; add 5ml polyethylene glycol to suspension A, stir well to obtain suspension B; add ammonia water to adjust suspension B Keep the pH at 6. Suspension B was ultrasonically oscillated for 30 minutes under ultrasonic waves to obtain a uniform and stable suspension C; the suspension C was placed in a muffle furnace, and heat treatment was performed at 500°C for 2 hours to obtain precursor powder D ; The precursor powder D is placed in a graphite crucible, calcined in a reducing atmosphere at a temperature of 1300 ℃ for 7 hours, the composition of the red...

Embodiment 2

[0030] In this embodiment, the nitrogen oxide phosphor to be prepared is (Y 5.5 Ce 0.5 )Si 3 O 9 N 4 , Where the metal composition is Y and Ce, and the nitride is Si 3 N 4 , According to (Y 5.5 Ce 0.5 )Si 3 O 9 N 4 Weigh the hydrochloride YCl of Y 3 ·6H 2 O(AR) 25.0272g, Ce hydrochloride CeCl 3 ·6H 2 O (99.99%) 2.6590 g and nitride Si 3 N 4 (AR) 2.1042g, dissolved in distilled water, mixed thoroughly to make 100ml milky white suspension A; add 5ml polyethylene glycol to suspension A, stir well to obtain suspension B, then drip ammonia to adjust the suspension The pH of B is maintained as the pH of suspension B at 6. Suspension B was ultrasonically oscillated for 30 minutes under ultrasonic waves to obtain a uniform and stable suspension C; the suspension C was placed in a muffle furnace, and subjected to a heat treatment at 500°C for 2.5 hours to obtain a precursor powder D ; Precursor powder D is placed in a graphite crucible, calcined in a reducing atmosphere at a temperature ...

Embodiment 3

[0032] In this embodiment, the nitrogen oxide phosphor to be prepared is (Sr 0.9 Yb 0.1 )SiAl 2 N 2 O 3 , Where the metal composition is Sr, Al and Yb, and the nitride is Si 3 N 4 And AlN, according to (Sr 0.9 Yb 0.1 )SiAl 2 N 2 O 3 Weigh the nitrate Sr(NO 3 ) 2 (AR) 5.7140 grams, Al nitrate Al(NO 3 ) 3 ·6H 2 O(AR)15.0056g, Yb nitrate Yb(NO 3 ) 3 ·5H 2 O (99.99%) 1.3474 g, Si nitride 3 N 4 (AR) 1.4028 g, nitride AlN (AR) 0.8198 g, dissolved in distilled water, mixed thoroughly to make 100ml milky white suspension A; add 8ml polyethylene glycol to suspension A, stir well to obtain suspension B , Drop in ammonia water, adjust the pH value of the solution, and keep the pH value of suspension B at 6. Suspension B was ultrasonically oscillated for 30 minutes in an ultrasonic wave to obtain a uniform and stable suspension C; the suspension C was placed in a muffle furnace and subjected to heat treatment at 500°C for 3 hours to obtain a precursor powder D ; Precursor powder D is placed...

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Abstract

The invention discloses a method for preparing nitrogen oxide phosphor powder. Salt and nitride of a metal component in the nitrogen oxide phosphor powder to be prepared are taken as raw materials, and the method comprises the following steps of: weighing the raw materials according to the stoichiometric proportion of the phosphor powder to be prepared, and dissolving the raw materials in water to prepare first suspension; adding a dispersant polyethylene glycol into the first suspension, fully dispersing the dispersant to prepare second suspension, and controlling the volume ratio of the dispersant to the first suspension to be 5-8:100; dropping ammonia water into the second suspension to make the pH value of the second suspension be 5-6; ultrasonically oscillating the second suspension in ultrasonic waves to prepare uniform and stable third suspension; putting the third suspension into a heating furnace, and performing thermal treatment at the temperature of between 500 and 600 DEG C for 2 to 3 hours to prepare precursor powder; and putting the precursor powder into a crucible, and calcining in the reducing atmosphere at the temperature of between 1,300 and 1,400 DEG C for 4.5 to 7 hours to prepare the required phosphor powder.

Description

Technical field [0001] The present invention relates to the technical field of luminescent materials, and is mainly used in cathode ray tubes (CRT), field emission displays (FED), plasma displays (PDP), electroluminescence (EL) and other display devices, fluorescent display tubes, fluorescent lamps, semiconductor lighting Among other lighting devices, it particularly relates to a method for preparing phosphors that emit visible or white light excited by violet to blue light. Background technique [0002] White light LED is a solid-state semiconductor device that converts electrical energy into white light, also known as semiconductor lighting. It has many advantages such as high efficiency, small size, long life, safety, low voltage, energy saving, and environmental protection. It is regarded as the next to incandescent lamp. The fourth generation of lighting sources after fluorescent lamps and high-pressure gas discharge lamps are mainstream products in the future lighting marke...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/79C09K11/80
Inventor 邓德刚王倩徐时清赵士龙黄立辉王焕平李晨霞
Owner CHINA JILIANG UNIV
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