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Method for preparing quantum dot film in a water phase through electrophoretic deposition

An electrophoretic deposition and quantum dot technology, applied in the field of nanomaterials, can solve problems such as unfavorable large-scale production process, waste of energy, pollution of the environment, etc., and achieve the effects of low voltage, energy saving, and simple operation process

Inactive Publication Date: 2011-02-16
EAST CHINA NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the preparation of quantum dot films by electrophoretic deposition is basically carried out in the organic phase, and a voltage as high as 100-1000V needs to be applied, which not only has certain risks in the operation process, but also wastes energy and pollutes the environment, so it is not conducive to large-scale application. in the production process

Method used

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  • Method for preparing quantum dot film in a water phase through electrophoretic deposition
  • Method for preparing quantum dot film in a water phase through electrophoretic deposition
  • Method for preparing quantum dot film in a water phase through electrophoretic deposition

Examples

Experimental program
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Effect test

Embodiment 1

[0021] (1) After cleaning the indium tin oxide (ITO) conductive glass with detergent, put it into a mixed solution of acetone and ethanol with a volume ratio of 1:1, ultrasonic for 15 minutes, rinse it with clean water, and dry it; then placed in V(H 2 O): V(H 2 o 2 ): V(NH 3 )=5:1:1 mixed solution, heated in a water bath at 60°C for 1h to carry out hydroxylation on the surface; finally put 0.5M chlorine of 1mg / ml polydiallyldimethylammonium chloride (PDDA) Soak in sodium chloride solution for 15 minutes to enrich a layer of positive charges on the surface, then rinse it with deionized water and dry it; in addition, clean a piece of zinc sheet with the same size as ITO conductive glass with deionized water and dry it.

[0022] (2) Take 2.5ml of CdTe (TGA-CdTe) quantum dot hydrosol modified with negatively charged thioglycolic acid (TGA) on the surface, add 0.5ml of 5mg / ml ascorbic acid aqueous solution, and adjust its pH value to 7.8 with 0.1M NaOH.

[0023] (3) Pass argon...

Embodiment 2

[0027] (1) The surface treatment process of the ITO conductive glass is the same as in Example 1. In addition, an aluminum sheet with the same size as the ITO conductive glass was cleaned with deionized water and dried.

[0028] (2) Take 2.5ml of TGA-CdTe quantum dot hydrosol with negative charge on the surface, add 0.15ml of 0.5M hydroquinone aqueous solution, and adjust its pH value to 9.0 with 0.1M NaOH.

[0029] (3) Pass argon gas in the above solution for 30 minutes to fully remove oxygen, and immerse the cleaned ITO conductive glass and the aluminum sheet in the solution with the conductive surface parallel to each other. The distance between the ITO conductive glass and the aluminum sheet is 2mm.

[0030] (4) Connect the ITO conductive glass to the positive pole of a DC power supply, connect the aluminum sheet to the negative pole of the power supply, set the voltage to 2.5V, and set the deposition time to 15 minutes, then a uniform smooth TGA- CdTe quantum dot film. ...

Embodiment 3

[0033] (1) The surface treatment process of the ITO conductive glass is the same as in Example 1. In addition, a stainless steel sheet with the same size as the ITO conductive glass was cleaned with deionized water and dried.

[0034] (2) Take 2.5ml of TGA-CdTe quantum dot hydrosol with negative charge on the surface, add 0.15ml of 0.5M sodium sulfide aqueous solution, and adjust the pH value to 10.5 with 0.1M NaOH.

[0035] (3) Pass argon gas in the above solution for 30 minutes to fully remove oxygen, and immerse the cleaned ITO conductive glass and stainless steel sheet in the solution with the conductive surface parallel to each other. The distance between the ITO conductive glass and the stainless steel sheet is 2mm.

[0036] (4) Connect the ITO conductive glass to the positive pole of a DC power supply, connect the stainless steel sheet to the negative pole of the power supply, set the voltage to 2.2V, and set the deposition time to 25min, then a uniform TGA- with smooth...

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Abstract

The invention discloses a method for preparing a quantum dot film in a water phase through anodic electrophoretic deposition. The method comprises the following steps of: applying an external voltage on two electrode plates in the water phase; and preparing a quantum dot film with even surface by adopting anodic electrophoretic deposition. By selecting a suitable conductive substrate and adding a suitable reducing agent, the problems of easy conductive substrate corrosion, easy water electrolysis, oxygen emission at the anode to hinder the deposition of quantum dots on the anodic conductive substrate in the process of preparing the quantum dot film in the water phase by utilizing the anodic electrophoretic deposition are overcome and the preparation of the quantum dot film in the water phase through the electrophoretic deposition is realized.

Description

technical field [0001] The invention relates to the technical field of nanometer materials, in particular to a method for preparing a quantum dot thin film by anodic electrophoretic deposition in an aqueous phase. Background technique [0002] Quantum dot film is a good photoelectric conversion material, which is widely used in light-emitting diodes, biosensors, thin-film solar cells and other nano-devices. With the development of thin film preparation technology, there are various methods for preparing quantum dot thin films, mainly including spin coating method, self-assembly method, electrodeposition method and electrophoretic deposition method. Among them, the electrophoretic deposition method is widely used in the preparation of various thin films due to many unique advantages. Its advantages mainly include: the requirements for the experimental conditions are not high, it can be carried out under the open system at normal temperature and pressure, and the deposition s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D13/00
Inventor 丁旵明欧阳涛周丽英
Owner EAST CHINA NORMAL UNIV
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