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Chemically amplified resist compositon and pattern forming process

A composition and resist technology, which can be applied in the direction of optics, pattern-surface photoengraving process, opto-mechanical equipment, etc., and can solve problems such as affecting acid diffusion.

Active Publication Date: 2011-03-02
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One issue that needs to be improved is the diffusion of acids which greatly affects the resolution of chemically amplified resist materials

Method used

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  • Chemically amplified resist compositon and pattern forming process
  • Chemically amplified resist compositon and pattern forming process
  • Chemically amplified resist compositon and pattern forming process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0121] Synthesis of Triphenylsulfonium Chloride

[0122] Dissolve 40 g (0.2 mol) of diphenylsulfoxide in 400 g of dichloromethane, and stir under ice cooling. At a temperature lower than 20° C., 65 g (0.6 mol) of trimethylsilyl chloride was added dropwise into the solution, and aged at this temperature for 30 minutes. Then, a Grignard reagent prepared from 14.6 g (0.6 mol) of magnesium metal, 67.5 g (0.6 mol) of chlorobenzene and 168 g of tetrahydrofuran (THF) was added dropwise at a temperature below 20°C. The reaction solution was allowed to mature for 1 hour, and then 50 g of water was added to quench the reaction at a temperature below 20°C. Further, 150 g of water, 10 g of 12N hydrochloric acid, and 200 g of diethyl ether were added to the solution. The aqueous layer was separated and washed with 100 g of diethyl ether to obtain an aqueous solution of triphenylsulfonium chloride. Compounds in aqueous solution were used in subsequent reactions without further isolation....

Embodiment 2

[0124] Synthesis of 4-tert-butylphenyldiphenylsulfonium bromide

[0125] The target compound was obtained according to the preparation method of Synthesis Example 1, except that 4-tert-butylbromobenzene was used instead of chlorobenzene in Synthesis Example 1 and the amount of water used for extraction was increased.

Embodiment 3

[0127] Synthesis of 4-tert-butoxyphenyldiphenylsulfonium chloride

[0128] In addition to replacing the chlorobenzene in Synthesis Example 1 with 4-tertiary oxychlorobenzene, using dichloromethane containing 5wt% triethylamine as a solvent, and increasing the amount of water used for extraction, the preparation according to Synthesis Example 1 Methods to obtain the target compound.

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Abstract

A chemically amplified resist composition comprises a polymer comprising units having polarity to impart adhesion and acid labile units adapted to turn alkali soluble under the action of acid. The polymer comprises recurring units having formula (1) wherein R 1 is H, F, CH 3 or CF 3 , Rf is H, F, CF 3 or CF 2 CF 3 , A is a divalent hydrocarbon group, R 2 , R 3 and R 4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. Recurring units containing an aromatic ring structure are present in an amount 60 mol% and the recurring units having formula (1) are present in an amount < 5 mol%.

Description

technical field [0001] The present invention mainly relates to a chemically amplified resist composition and a method for forming a resist pattern. The chemically amplified resist composition, especially the chemically amplified positive resist composition is sensitive to high-energy radiation such as UV, deep-UV, EUV, X-ray, γ-ray, synchrotron radiation and electron beam (EB ) sensitive, especially suitable for high-energy radiation beams, especially EB or deep-UV irradiation exposure steps, and suitable for microfabrication of semiconductor devices and photomasks. Background technique [0002] In order to meet the recent demand for higher integration in integrated circuits, finer feature sizes for patterning are required. Acid-catalyzed chemically amplified resist compositions are mostly commonly used to form resist patterns having a feature size of 0.2 μm or less. High-energy radiation such as UV, deep-UV or electron beam (EB) is used as a light source for exposure of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039G03F7/00H01L21/027
CPCG03F7/0397G03F7/0392G03F7/0045G03F7/004G03F7/0046H01L21/027H01L21/0271
Inventor 增永惠一渡边聪田中启顺土门大将
Owner SHIN ETSU CHEM CO LTD
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