Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting

A crystal growth and growth method technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of small light output, long light attenuation time, slow crystal growth rate, etc., to save production costs, reduce Subsequent process, the effect of fast growth

Inactive Publication Date: 2011-04-06
SHANGHAI APPLIED TECHNOLOGIES COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the main disadvantages of BGO crystals are: the light decay time is long (300ns), so its time resolution is poor; the light yield is small, resulting in low energy resolution of the material; GeO2expensive, resulting in high production costs
When the pulling method is used to grow, the crucible is opened to cause volatilization of components, so the

Method used

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  • Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting
  • Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting
  • Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting

Examples

Experimental program
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Example Embodiment

[0036] Example 1

[0037] High purity Bi 2 O 3 , SiO 2 It is the initial raw material, it is mixed according to its molar ratio of 2:3, the raw materials are fully mixed uniformly, and pre-fired at 650°C for 6 hours. Subsequently, the raw material is ground to a particle size of 400 nm, and pre-fired at 850° C. for 12 hours to obtain a BSO polycrystalline material. Take orientation as The BSO crystal is a seed crystal, and the BSO polycrystalline material is placed in a crucible with a shaping mold (the mold width is 50mm, and the slit width is 8mm), and placed in an air atmosphere shaping pulling furnace. Continue to heat up to 1100 ℃, keep the temperature for 5 hours until the polycrystalline material is completely melted. Slowly put down the seed crystal to make contact with the melt at the top of the slit. The top of the seed crystal is partially melted, and the melt spreads out on the top of the mold. The schematic diagram of crystal growth in the shaped mold is as foll...

Example Embodiment

[0038] Example 2

[0039] High purity Bi 2 O 3 , SiO 2 It is the initial raw material, and it is mixed according to its molar ratio of 2:3. The raw materials are fully mixed uniformly and pre-fired at 700°C for 8 hours. Subsequently, the raw material is ground to a particle size of 550 nm, and pre-fired at 800° C. for 8 hours to obtain a BSO polycrystalline material. Will be oriented to The BSO crystal is a seed crystal, and the BSO polycrystalline material is placed in a crucible with a shaping mold (the mold width is 40 mm, and the slit width is 5 mm), and placed in a shaping pulling furnace in an oxygen atmosphere. Continue to heat up to 1130°C and keep the temperature constant for 3 hours until the polycrystalline material is completely melted. Slowly put down the seed crystal to make contact with the melt at the top of the slit. The top of the seed crystal is partially melted, and the melt spreads out on the top of the mold. The growth rate is 8mm / h, and the temperature...

Example Embodiment

[0040] Example 3

[0041] A transparent window for observation is opened on the side of the crystal growth furnace to observe the solid-liquid interface and crystal growth in the crystal growth in real time, and realize real-time monitoring. High purity Bi 2 O 3 , SiO 2 It is the initial raw material, and the molar ratio is 2:3. The raw materials are mixed thoroughly and pre-fired at 750°C for 10 hours. Subsequently, the raw materials were ground to a particle size of 600 nm, and pre-fired at 850°C for 8 hours. Will be oriented to The BSO crystal is a seed crystal, and the BSO polycrystalline material is placed in a crucible with a shaping mold (the mold width is 60mm, and the slit width is 2mm), and placed in a shaping pulling furnace with an air atmosphere. Continue to heat up to 1200°C and keep the temperature constant for 3 hours until the polycrystalline material is completely melted. Slowly put down the seed crystal to make contact with the melt at the top of the sli...

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Abstract

The invention discloses a method for growing a bismuth silicate (BSO short for Bi4Si3O12) scintillation crystal by shaping and lifting, belonging to the field of single crystal growth. The invention is characterized in that a mold in a specific shape is designed and installed in a crucible, and a shaping and lifting furnace is used for growing the BSO scintillation crystal. The method comprises the following steps: pre-burning Bi2O3 and SiO2 at high temperature to obtain a BSO polycrystalline raw material; putting the BSO polycrystalline raw material into the crucible with the mold in the specific shape, and putting the crucible into the shaping and lifting furnace; continuously heating to 1100-1200 DEG C, and keeping the constant temperature for 3-5h; and then, putting and quickly lifting a seed crystal, and growing to obtain a platy BSO crystal. By using the method of the invention, the purposes of quickly growing a high-quality platy BSO scintillation crystal, shortening the crystal growth cycle, simultaneously reducing the subsequent crystal manufacturing processes, improving the crystal utilization ratio, and effectively saving the production cost can be achieved.

Description

Technical field [0001] The present invention involves a fixed -pulling method of a silicine (BSO) flashing crystal. Specifically, it is to use a cricket with a fixed mold to pull out from the high -temperature melt in the high temperature melt.Plate -like silicate crystals belong to the field of single crystal growth. Background technique [0002] Flashing crystals are a kind of light function crystal that can convert high -energy rays (X -rays, γ -rays, etc.) or high -energy particles into ultraviolet or visible light. Because it is in high energy physics, nuclear physics, nuclear medicine imaging (PET / CT)Important applications in areas have attracted much attention.B acid b (BI 4 GE 3 O 12 , BGO) Crystal is one of the most widely used flash crystals, which has high density and short radiation length.However, the main disadvantage of BGO crystals is: long time attenuation (300ns), so its time resolution is poor; the amount of light production is small, resulting in low energy re...

Claims

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Application Information

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IPC IPC(8): C30B15/24C30B29/34C30B29/64
Inventor 徐家跃申慧金敏张彦何庆波江国健王占勇
Owner SHANGHAI APPLIED TECHNOLOGIES COLLEGE
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