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Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting

A crystal growth and growth method technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of small light output, long light attenuation time, slow crystal growth rate, etc., to save production costs, reduce Subsequent process, the effect of fast growth

Inactive Publication Date: 2011-04-06
SHANGHAI APPLIED TECHNOLOGIES COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the main disadvantages of BGO crystals are: the light decay time is long (300ns), so its time resolution is poor; the light yield is small, resulting in low energy resolution of the material; GeO2expensive, resulting in high production costs
When the pulling method is used to grow, the crucible is opened to cause volatilization of components, so there are clouds and inclusions in the grown BSO crystal, and the crystal is easy to crack, and it is difficult to obtain large-sized, high-quality BSO crystals; the crucible drop method is to grow BSO crystals A more effective method, but this method has problems such as slow crystal growth rate, high cost, and the growth process cannot be directly observed.

Method used

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  • Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting
  • Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting
  • Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting

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Effect test

Embodiment 1

[0037] High-purity Bi 2 o 3 , SiO 2 As the initial raw material, the molar ratio is 2: 3 for batching, the raw materials are fully mixed, and pre-calcined at 650 ° C for 6 hours. Then the raw materials were ground to a particle size of 400nm, and then calcined at 850° C. for 12 hours to obtain the BSO polycrystalline material. The BSO crystal with orientation was used as the seed crystal, and the BSO polycrystalline material was placed in a crucible with a shaping mold (the width of the mold was 50 mm, and the width of the slit was 8 mm), and placed in a shaping and pulling furnace in an air atmosphere. Continue to raise the temperature to 1100°C, and keep the temperature constant for 5 hours until the polycrystalline material is completely melted. The seed crystal is slowly lowered to make it contact with the melt at the top of the slit, the top of the seed crystal is partially melted, and the melt spreads on the top of the mold. The schematic diagram of its crystal growt...

Embodiment 2

[0039] High-purity Bi 2 o 3 , SiO 2As the initial raw material, the molar ratio is 2: 3 for batching, the raw materials are fully mixed, and pre-calcined at 700 ° C for 8 hours. Then the raw materials were ground to a particle size of 550nm, and pre-calcined at 800°C for 8 hours to obtain the BSO polycrystalline material. The BSO crystal is used as the seed crystal, and the BSO polycrystalline material is placed in a crucible with a shaping mold (the width of the mold is 40mm, and the width of the slit is 5mm), and it is placed in a shaping and pulling furnace in an oxygen atmosphere. Continue to raise the temperature to 1130°C, and keep the temperature constant for 3 hours until the polycrystalline material is completely melted. Slowly lower the seed crystal to make it contact with the melt at the top of the slit, the top of the seed crystal is partially melted, and the melt spreads on the top of the mold, and grows at a speed of 8mm / h, and the temperature gradient of the...

Embodiment 3

[0041] A transparent window for observation is set up on the side of the crystal growth furnace, so that the solid-liquid interface and crystal growth during crystal growth can be observed in real time to achieve real-time monitoring. High-purity Bi 2 o 3 , SiO 2 As the initial raw material, the molar ratio is 2:3 for batching, the raw materials are fully mixed, and pre-calcined at 750 ° C for 10 hours. Then the raw materials were ground to a particle size of 600nm, and pre-calcined at 850°C for 8h. BSO crystals with an orientation of were used as seed crystals, and the BSO polycrystalline material was placed in a crucible with a shaping mold (the width of the mold was 60mm, and the width of the slit was 2mm), and placed in a shaping and pulling furnace in an air atmosphere. Continue to raise the temperature to 1200°C, and keep the temperature constant for 3 hours until the polycrystalline material is completely melted. Slowly put down the seed crystal so that it is in co...

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Abstract

The invention discloses a method for growing a bismuth silicate (BSO short for Bi4Si3O12) scintillation crystal by shaping and lifting, belonging to the field of single crystal growth. The invention is characterized in that a mold in a specific shape is designed and installed in a crucible, and a shaping and lifting furnace is used for growing the BSO scintillation crystal. The method comprises the following steps: pre-burning Bi2O3 and SiO2 at high temperature to obtain a BSO polycrystalline raw material; putting the BSO polycrystalline raw material into the crucible with the mold in the specific shape, and putting the crucible into the shaping and lifting furnace; continuously heating to 1100-1200 DEG C, and keeping the constant temperature for 3-5h; and then, putting and quickly lifting a seed crystal, and growing to obtain a platy BSO crystal. By using the method of the invention, the purposes of quickly growing a high-quality platy BSO scintillation crystal, shortening the crystal growth cycle, simultaneously reducing the subsequent crystal manufacturing processes, improving the crystal utilization ratio, and effectively saving the production cost can be achieved.

Description

Technical field [0001] The present invention involves a fixed -pulling method of a silicine (BSO) flashing crystal. Specifically, it is to use a cricket with a fixed mold to pull out from the high -temperature melt in the high temperature melt.Plate -like silicate crystals belong to the field of single crystal growth. Background technique [0002] Flashing crystals are a kind of light function crystal that can convert high -energy rays (X -rays, γ -rays, etc.) or high -energy particles into ultraviolet or visible light. Because it is in high energy physics, nuclear physics, nuclear medicine imaging (PET / CT)Important applications in areas have attracted much attention.B acid b (BI 4 GE 3 O 12 , BGO) Crystal is one of the most widely used flash crystals, which has high density and short radiation length.However, the main disadvantage of BGO crystals is: long time attenuation (300ns), so its time resolution is poor; the amount of light production is small, resulting in low energy re...

Claims

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Application Information

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IPC IPC(8): C30B15/24C30B29/34C30B29/64
Inventor 徐家跃申慧金敏张彦何庆波江国健王占勇
Owner SHANGHAI APPLIED TECHNOLOGIES COLLEGE
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