Method for preparing CMP (Chemically Mechanical Polishing) solution for sapphire substrate material

Abstract

The invention relates to a method for preparing a CMP (Chemically Mechanical Polishing) solution in a high-precision surface finishing process of a sapphire substrate material. In the method, a nano SiO2 abrasive material is adopted for the polishing solution, wherein the abrasive material has the concentration of 30-50wt% and the particle diameter of 15-100nm so as to benefit material removal and surface leveling. The pH value of the polishing solution is 9-13, which not only benefits effective removal but also guarantees the stability of silica sol; and in a preparation process, a negative pressure stirring preparation method is adopted under a closed system, and pollutions of organic matters, large particles, metal ions and the like brought by the traditional preparation methods of compounding, mechanical stirring and the like are prevented so that the requirement on ultra cleanness is met.

Description

technical field [0001] The invention belongs to a method for preparing a polishing liquid, in particular to a method for preparing a polishing liquid for a sapphire substrate material. Background technique [0002] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, and good wear resistance The hardness is second only to diamond, with a Ta Mok's grade of 9, and it still has good stability at high temperatures, with a melting point of 2030°C, so it is widely used in industry, national defense, scientific research and other fields, and is increasingly used as Manufacturing materials for parts in high-tech fields such as solid-state lasers, infrared windows, substrates for semiconductor chips, and precision wear-...

AI Technical Summary

Problems solved by technology

At present, most of the polishing liquid used in the mass production of sapphire in China is imported. One of the reasons is the negative effects such as pollution caused by the traditional domestic polishing liquid preparation method.

Such as traditional compounding and mechanical stirring and other preparation methods are likely to cause harmful pollution such as organic matter, metal ions, large particles, etc., resulting in an increase in the cost of subsequent processing and a decrease in device yield

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