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Cleaning liquid for solar polycrystalline silicon wafer

A technology for polycrystalline silicon wafers and cleaning solution, which is applied in detergent compounding agents, detergent compositions, organic cleaning compositions, etc., can solve problems such as affecting the yield and product quality, solar wafers fluffing, white spots, and inability to clean them. , to achieve the effect of improving yield and quality, reducing enterprise costs and increasing cleanliness

Inactive Publication Date: 2012-02-15
JIANGXI SORNID HI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the cleaning process, due to the pollutants remaining on the surface of the silicon wafer for too long, due to the strong adsorption of oxidized pollutants on the surface of the silicon wafer, there are too many chemicals, metal impurities, acid and alkali residues, etc. on the surface of the solar silicon wafer. It cannot be cleaned by the current cleaning method, so black spots and black spots will be formed on the surface of the silicon wafer, which will cause white spots when the solar silicon wafer is textured, resulting in chromatic aberration, affecting the yield and product quality

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Raw materials and weight percentages are as follows:

[0032] Isopropanol 30%

[0033] Fatty alcohol polyoxyethylene polyoxypropylene ether L64 (American BASF product model) 3%

[0034] Sodium carbonate 3%

[0035] Disodium EDTA 2%

[0036] Polyethylene glycol 2%

[0037] 60% pure water.

[0038] Place silicon wafers with black spots or black spots in a flower basket, soak them in an ultrasonic cleaning tank filled with the cleaning solution of the present invention, ultrasonically clean them at 50-70°C for 5-10 minutes, and then dry them after several times of ultrasonic rinsing with pure water. That's it.

Embodiment 2

[0040] Raw materials and weight percentages are as follows:

[0041] Ethylene Glycol 25%, Propylene Glycol 15%

[0042] Fatty alcohol polyoxyethylene polyoxypropylene ether LF431 (American BASF product model) 2%

[0043] Potassium Carbonate 2%, Sodium Bicarbonate 1%

[0044] Sodium Nitrilotriacetate 1.7%, Ammonium Salt 1.3%

[0045] Sodium Polyacrylate 0.2%, Polyethylene Glycol 0.3%

[0046] Pure water 51.5%.

[0047] Place silicon wafers with black spots or black spots in a flower basket, soak them in an ultrasonic cleaning tank filled with the cleaning solution of the present invention, ultrasonically clean them at 50-70°C for 5-10 minutes, and then dry them after several times of ultrasonic rinsing with pure water. That's it.

Embodiment 3

[0049] Raw materials and weight percentages are as follows:

[0050] n-butanol 20%, isobutanol 10% monomethyl glycol 10%

[0051] Fatty alcohol polyoxyethylene polyoxypropylene ether LF431 (American BASF product model) 5%

[0052] Sodium Carbonate 2%, Potassium Bicarbonate 1%, Sodium Metasilicate 1%

[0053] Diaminetetraacetic acid 1%, diethylenetriaminepentaacetic acid 1%, sodium salt 1%

[0054] Styrene block copolymer 0.7%, polyacrylic acid 0.8%, polyethyleneimine 0.5%

[0055] Pure water 46%.

[0056] Place silicon wafers with black spots or black spots in a flower basket, soak them in an ultrasonic cleaning tank filled with the cleaning solution of the present invention, ultrasonically clean them at 50-70°C for 5-10 minutes, and then dry them after several times of ultrasonic rinsing with pure water. That's it.

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PUM

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Abstract

The invention discloses cleaning liquid for cleaning a solar polycrystalline silicon wafer of which the surface is provided with dark spots or dark stains. The cleaning liquid is prepared by mixing an alcohol auxiliary agent, a complexing agent, a polyether surfactant, a dispersing agent, an anti-settling agent and pure water; and the cleaning liquid comprises the following raw materials in percentage by mass: 3 to 40 percent of the alcohol auxiliary agent, 1 to 10 percent of fatty alcohol polyoxyethylene polyoxypropylene ether, 1 to 5 percent of inorganic auxiliary agent, 1 to 5 percent of the complexing agent, 0.5 to 5 percent of the anti-settling agent, and 1 to 80 percent of the pure water. The cleaning liquid has the characteristic of high cleaning efficiency, is simple in preparation, improves the silicon wafer yield, and is favorable for reducing enterprise cost.

Description

technical field [0001] The invention relates to a solar polysilicon chip cleaning solution, in particular to a polysilicon chip cleaning solution with black spots or spots caused by oxidation. Background technique [0002] With the continuous aggravation of energy crisis and environmental problems, countries around the world have conducted a lot of research on renewable energy. Solar energy has become the focus of everyone's attention due to its environmental protection, high storage capacity, safety and potential economy. Since Bell Laboratories in the United States successfully developed a practical silicon single crystal solar cell with a photoelectric conversion efficiency of 6% in 1954, silicon solar cells have become the solar cells in the photovoltaic market because of their high reliability, long life, and ability to withstand various environmental changes. main species. At present, more than 50% of solar cells in the world are made of polysilicon materials. Obviou...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C11D1/722C11D3/20C11D3/37C11D3/60
Inventor 袁志鸿
Owner JIANGXI SORNID HI TECH